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COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
POWERDI®5060-8
Product Summary
Device
V(BR)DSS
RDS(ON)
Q1
12V
17mΩ @ VGS = 4.5V
25mΩ @ VGS = 2.5V
Q2
-12V
32mΩ @ VGS = -4.5V
53mΩ @ VGS = -2.5V
Description and Applications
This new generation Complementary Pair Enhancement Mode
MOSFET has been designed to minimize RDS(on) and yet maintain
superior switching performance. This device is ideal for use in
Notebook battery power management and Loadswitch.
Notebook Battery Power Management
DC-DC Converters
Loadswitch
Features and Benefits
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
Low RDS(ON) Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: POWERDI5060-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.097 grams (approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
DMC1017UPD-13
POWERDI5060-8
2500 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Bottom View
Top View
Pin Configuration
Top View
Pin1
S1
D2
D1
G2
D1
D2
G1
S2
Q1 N-Channel MOSFET
Q2 P-Channel MOSFET
D1
S1
G1
D2
S2
G2
S1
D1
G1
S2
G2
D1
D2
D2
C1017UD
YY
WW
= Manufacturer’s Marking
C1017UD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
NOT RECOMMENDED FOR NEW DESIGN
USE DMC1018UPD
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Q1 Value
Q2 Value
Units
Drain-Source Voltage
VDSS
12
-12
V
Gate-Source Voltage
VGSS
±8
±8
V
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
TA = +25°C
TA = +70°C
ID
9.5
7.6
-6.9
-5.5
A
t<10s
TA = +25°C
TA = +70°C
ID
13.0
10.4
-9.4
-7.5
A
Maximum Body Diode Forward Current
IS
2
-2
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
IDM
50
-35
A
Avalanche Current (Note 6) L = 0.1mH
IAS
9.7
-9.2
A
Avalanche Energy (Note 6) L = 0.1mH
EAS
4.7
4.3
mJ
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
TA = +25°C
PD
2.3
W
TA = +70°C
1.5
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
RθJA
54
°C/W
t<10s
29
Thermal Resistance, Junction to Case (Note 5)
RθJC
4.1
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics Q1 N-Channel (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
12
V
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
IDSS


1
µA
VDS = 12V, VGS = 0V
Gate-Source Leakage
IGSS
100
nA
VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)
0.6
1.5
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance
RDS(ON)
9.6
17
mΩ
VGS = 4.5V, ID = 11.8A
11
25
VGS = 2.5V, ID = 9.8A
Diode Forward Voltage
VSD
0.7
1.2
V
VGS = 0V, IS = 2.9A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
1787
pF
VDS = 6V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
297
Reverse Transfer Capacitance
Crss
265
Gate Resistance
RG

1.6

Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = 4.5V)
Qg
18.6
nC
VDS = 6V, ID = 11.8A
Total Gate Charge (VGS = 10V)
Qg
35.4
Gate-Source Charge
Qgs
2.7
Gate-Drain Charge
Qgd
3.8
Turn-On Delay Time
tD(on)
6.9
nS
VDD = 6V, RL = 6Ω
VGS = 4.5V, RG = 6Ω, ID = 1A
Turn-On Rise Time
tr
10.9
Turn-Off Delay Time
tD(off)
70.3
Turn-Off Fall Time
tf

31.8

Body Diode Reverse Recovery Time
trr
13.1
nS
IF = 11.8A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge
Qrr
2.2
nC
IF = 11.8A, di/dt = 100A/μs
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = 25°C.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
I , DRAIN CURRENT (A)
D
0.0
5.0
10.0
15.0
20.0
0 0.5 1 1.5 2 2.5 3
V = 1.2V
GS
V = 1.3V
GS
V = 1.5V
GS
V = 4.0V
GS
V = 4.5V
GS
V = 8.0V
GS
V = 2.0V
GS
V = 2.5V
GS
V = 3.0V
GS
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I , DRAIN CURRENT (A)
D
0
2
4
6
8
10
12
14
16
18
20
0 0.5 1 1.5 2 2.5
V = 5.0V
DS
T = 150°C
A
T = 125°C
AT = 85°C
A
T = 25°C
A
T = -55°C
A
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
0
0.003
0.006
0.009
0.012
0.015
0 2 4 6 8 10 12 14 16 18 20
V = 2.5V
GS
V = 4.5V
GS
I , DRAIN CURRENT (A)
D
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
0
0.003
0.006
0.009
0.012
0.015
0 2 4 6 8 10 12 14 16 18 20
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
AT = 150°C
A
V = 4.5V
GS
T , JUNCTION TEMPERATURE ( C)
Figure 5 On-Resistance Variation with Temperature
J
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DS(ON)
0
0.5
1
1.5
2
2.5
-50 -25 0 25 50 75 100 125 150
V = 4.5V
I = 10A
GS
D
V = V
I = 5A
GS
D
2.5
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
0
0.005
0.01
0.015
-50 -25 0 25 50 75 100 125 150
V = .5V
I = 5A
GS
D
2
V = V
I = 10A
GS
D
4.5
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T , JUNCTION TEMPERATURE ( C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
J
V , GATE THRESHOLD VOLTAGE (V)
GS(th)
0
0.5
1
1.5
-50 -25 0 25 50 75 100 125 150
I = 1mA
D
I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 8 Diode Forward Voltage vs. Current
I , SOURCE CURRENT (A)
S
T = 125°C
A
0
2
4
6
8
10
12
14
16
18
20
0 0.3 0.6 0.9 1.2 1.5
T = 150°C
A
T = -55°C
A
T = 25°C
A
T = 85°C
A
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9 Typical Junction Capacitance
C , JUNCTION CAPACITANCE (pF)
T
10
100
1000
10000
0 2 4 6 8 10 12
f = 1MHz
Ciss
Coss
Crss
Q (nC)
g, TOTAL GATE CHARGE
Figure 10 Gate Charge
V GATE THRESHOLD VOLTAGE (V)
GS
0
2
4
6
8
0 5 10 15 20 25 30 35 40
V = 6V
I = A
DS
D
11.8
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Electrical Characteristics Q2 P-Channel (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BVDSS
-12
V
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
IDSS


-1
µA
VDS = -12V, VGS = 0V
Gate-Source Leakage
IGSS
100
nA
VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
VGS(th)
-0.6
-1.5
V
VDS = VGS, ID = -250µA
Static Drain-Source On-Resistance
RDS(ON)
21
32
mΩ
VGS = -4.5V, ID = -8.9A
41
53
VGS = -2.5V, ID = -6.9A
Diode Forward Voltage
VSD
-0.7
-1.2
V
VGS = 0V, IS = -2.9A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Ciss
2100
pF
VDS = -6V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
872
Reverse Transfer Capacitance
Crss
626
Gate Resistance
RG

23.1

Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = -4.5V)
Qg
23.7
nC
VDS = -6V, ID = -8.9A
Total Gate Charge (VGS = -8V)
Qg
38.8
Gate-Source Charge
Qgs
5.3
Gate-Drain Charge
Qgd
9.8
Turn-On Delay Time
tD(on)
10.6
nS
VDD = -6V, RL = 6Ω
VGS = -4.5V, RG = 6Ω, ID = -1A
Turn-On Rise Time
tr
25.5
Turn-Off Delay Time
tD(off)
144
Turn-Off Fall Time
tf

129

Body Diode Reverse Recovery Time
trr
48.9
nS
IF = -8.9A, di/dt = -100A/μs
Body Diode Reverse Recovery Charge
Qrr
15.3
nC
IF = -8.9A, di/dt = -100A/μs
Notes: 6. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = 25°C.
7. Short duration pulse test used to minimize self-heating effect.
-V , DRAIN -SOURCE VOLTAGE (V)
Figure 11 Typical Output Characteristics
DS
-I , DRAIN CURRENT (A)
D
0.0
5.0
10.0
15.0
20.0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V = -1.8V
GS
V = -2.0V
GS
V = -3.0V
GS
V = -4.0V
GS
V = -8.0V
GS
V = -4.5V
GS
V = -2.5V
GS
V = -3.5V
GS
-V , GATE-SOURCE VOLTAGE (V)
GS
Figure 12 Typical Transfer Characteristics
-I , DRAIN CURRENT (A)
D
0
2
4
6
8
10
12
14
16
18
20
0 0.5 1 1.5 2 2.5 3 3.5 4
T = 150 C
A
T = 125 C
A
T = 85 C
A
T = 25 C
A
T = -55 C
A
V = -5.0V
DS
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-I , DRAIN SOURCE CURRENT (A)
Figure 13Typical On-Resistance vs.
Drain Current and Gate Voltage
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0 2 4 6 8 10 12 14 16 18 20
V = -4.5V
GS
V = -2.5V
GS
-I , DRAIN SOURCE CURRENT (A)
Figure 14 Typical On-Resistance vs.
Drain Current and Temperature
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
0.009
0.012
0.015
0.018
0.021
0.024
0.027
0.03
0 2 4 6 8 10 12 14 16 18 20
T = -55 C
A
T = 25 C
A
T = 85 C
A
T = 125 C
AT = 150 C
A
V = -4.5V
GS
T , JUNCTION TEMPERATURE ( C)
J
Figure 15 On-Resistance Variation with Temperature
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DS(ON)
0
0.5
1
1.5
2
-50 -25 0 25 50 75 100 125 150
V = -2.5V
I = -5A
GS
D
V = -4.5V
I = -10A
GS
D
T , JUNCTION TEMPERATURE ( C)
J
Figure 16 On-Resistance Variation with Temperature
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(on)
0
0.005
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0.045
0.05
-50 -25 0 25 50 75 100 125 150
V = -2.5V
I = A
GS
D
-5
V = 5V
I = A
GS
D
-4.
-10
T , AMBIENT TEMPERATURE (°C)
Figure 17 Gate Threshold Variation vs. Ambient Temperature
A
V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
0
0.5
1
1.5
2
-50 -25 0 25 50 75 100 125 150
-I = 1mA
D
-I = 250µA
D
-V , SOURCE-DRAIN VOLTAGE (V)
Figure 18 Diode Forward Voltage vs. Current
SD
-I , SOURCE CURRENT (A)
S
0
2
4
6
8
10
12
14
16
18
20
0 0.3 0.6 0.9 1.2
T = 125 C
A
1.5
T = 150 C
A
T = 25 C
A
T = 85 C
A
T = -55 C
A
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C , JUNCTION CAPACITANCE (pF)
T
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 19 Typical Junction Capacitance
DS
Ciss
100
1000
10000
0 2 4 6 8 10 12
f = 1MHz
Coss
Crss
Q , TOTAL GATE CHARGE (nC)
Figure 20 Gate-Charge Characteristics
g
-V , GATE-SOURCE VOLTAGE (V)
GS
0
2
4
6
8
0 5 10 15 20 25 30 35 40
V = -6V
I = -8.9A
DS
D
t1, PULSE DURATION TIMES (sec)
Figure 21 Transient Thermal Resistance
r(t), TRANSIENT THERMAL RESISTANCE
R (t) = r(t) * R
R = 104°C/W
Duty Cycle, D = t1/ t2

JA JA
JA
D = 0.7
D = 0.9
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.
PowerDI5060-8
Dim
Min
Max
Typ
A
0.90
1.10
1.00
A1
0
0.05
0.02
b
0.33
0.51
0.41
b1
0.300
0.366
0.333
b2
0.20
0.35
0.25
c
0.23
0.33
0.277
D
5.15 BSC
D1
4.85
4.95
4.90
D2
1.40
1.60
1.50
D3
-
-
3.98
E
6.15 BSC
E1
5.75
5.85
5.80
E2
3.56
3.76
3.66
e
1.27BSC
k
-
-
1.27
k1
0.56
-
-
L
0.51
0.71
0.61
La
0.51
0.71
0.61
L1
0.05
0.20
0.175
L4
-
-
0.125
M
3.50
3.71
3.605
x
-
-
1.400
y
-
-
1.900
θ
10°
12°
11°
θ1
All Dimensions in mm
Dimensions
Value
(in mm)
C
1.270
G
0.660
G1
0.820
X
0.610
X1
3.910
X2
1.650
X3
1.650
X4
4.420
Y
1.270
Y1
1.020
Y2
3.810
Y3
6.610
DETAIL A
0(4x)
Seating Plane
A1
c
e
01(4x)
D1
E1
D
E
1
y
x
Ø1.000 Depth 0.07±0.030
A
DETAIL A
Lk
M
L1
D2
La
E2
b(8x) e/2
1
b1(8x)
b2(2x)
D2
k1
D3
L4
1
8
Y3
X4
Y1
Y2
X1
G1
X C
Y(4x)
G
X2
X3
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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final and determinative format released by Diodes Incorporated.
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
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failure of the life support device or to affect its safety or effectiveness.
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