SGL50N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. * * * * * Short circuit rated 10us @ TC = 100C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.2 V @ IC = 50A High input impedance CO-PAK, IGBT with FRD : trr = 50ns (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C G TO-264 G C Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg TL E E TC = 25C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from Case for 5 Seconds @ TC = 25C @ TC = 100C @ TC = 100C @ TC = 100C @ TC = 25C @ TC = 100C SGL50N60RUFD 600 20 80 50 150 30 90 10 250 100 -55 to +150 -55 to +150 Units V V A A A A A us W W C C 300 C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RJC(IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (c)2002 Fairchild Semiconductor Corporation Typ. ---- Max. 0.5 1.0 25 Units C/W C/W C/W SGL50N60RUFD Rev. A1 SGL50N60RUFD IGBT C Symbol Parameter = 25C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 -- -- V VGE = 0V, IC = 1mA -- 0.6 -- V/C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 250 100 uA nA Ic = 50mA, VCE = VGE IC = 50A, VGE = 15V IC = 80A, VGE = 15V 5.0 --- 6.0 2.2 2.5 8.5 2.8 -- V V V ---- 3311 399 139 ---- pF pF pF --------------- 26 89 66 118 1.68 1.03 2.71 28 91 68 261 1.7 2.31 4.01 --100 200 --3.8 --110 400 --5.62 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ Off Characteristics BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE=30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Tsc Short Circuit Withstand Time Qg Qge Qgc Le Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance VCC = 300 V, IC = 50A, RG = 5.9, VGE = 15V, Inductive Load, TC = 25C VCC = 300 V, IC = 50A, RG = 5.9, VGE = 15V, Inductive Load, TC = 125C VCC = 300 V, VGE = 15V 100C VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge (c)2002 Fairchild Semiconductor Corporation -- us 145 25 70 18 210 35 100 -- nC nC nC nH Min. -- Typ. 1.9 Max. 2.8 Units -- 1.8 -- TC = 25C -- 70 100 TC = 100C -- 140 -- TC = 25C -- 6 7.8 TC = 100C -- 8 -- TC = 25C -- 200 360 TC = 100C -- 580 -- Measured 5mm from PKG C Parameter -- ----- VCE = 300 V, IC = 50A, VGE = 15V Electrical Characteristics of DIODE T Symbol 10 @ TC = = 25C unless otherwise noted Test Conditions TC = 25C IF = 30A TC = 100C IF= 30A, di/dt = 200 A/us V ns A nC SGL50N60RUFD Rev. A1 SGL50N60RUFD Electrical Characteristics of the IGBT T 140 15V Common Emitter VGE = 15V TC = 25 TC = 125 ------ 120 Collector Current, I C [A] Collector Current, IC [A] 120 12V 100 80 60 VGE = 10V 40 100 80 60 40 20 20 0 0 0 2 4 6 8 1 Collector - Emitter Voltage, VCE [V] Fig 2. Typical Saturation Voltage Characteristics 5 60 VCC = 300V Load Current : peak of square wave Common Emitter V GE = 15V 50 4 100A 3 50A 2 IC = 30A Load Current [A] Collector - Emitter Voltage, VCE [V] 10 Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics 1 40 30 20 10 Duty cycle : 50% TC = 100 Power Dissipation = 70W 0 0 -50 0 50 100 1 150 10 100 1000 Frequency [KHz] Case Temperature, T C [] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 20 Common Emitter TC = 25 Collector - Emitter Voltage, V CE [V] Collector - Emitter Voltage, V CE [V] SGL50N60RUFD 20V Common Emitter T C = 25 140 16 12 8 100A 4 50A IC = 30A Common Emitter TC = 125 16 12 8 100A 4 50A IC = 30A 0 0 0 4 8 12 16 Gate - Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE (c)2002 Fairchild Semiconductor Corporation 20 0 4 8 12 16 20 Gate - Emitter Voltage, VGE [V] Fig 6. Saturation Voltage vs. VGE SGL50N60RUFD Rev. A1 Common Emitter VCC = 300V, VGE = 15V IC = 50A T C = 25 T C = 125 ------ 5000 Ton Switching Time [ns] Capacitance [pF] 1000 Common Emitter VGE = 0V, f = 1MHz TC = 25 6000 Cies 4000 3000 Coes 2000 SGL50N60RUFD 7000 Tr 100 Cres 1000 0 1 10 10 Fig 8. Turn-On Characteristics vs. Gate Resistance Fig 7. Capacitance Characteristics 10000 Common Emitter V CC = 300V, V GE = 15V IC = 50A T C = 25 T C = 125 ------ Common Emitter VCC = 300V, V GE = 15V IC = 50A TC = 25 TC = 125 ------ Toff Switching Loss [uJ] Switching Time [ns] 1000 100 Gate Resistance, RG [ ] Collector - Emitter Voltage, V CE [V] Toff Tf Eon Eoff Eoff 1000 Tf 100 10 100 10 Gate Resistance, R G [ ] 100 Gate Resistance, R G [ ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 1000 1000 Ton Switching Time [ns] Switching Time [ns] Common Emitter V GE = 15V, RG = 5.9 T C = 25 T C = 125 ------ Tr 100 Toff Tf Toff 100 Tf Common Emitter VGE = 15V, RG = 5.9 TC = 25 TC = 125 ------ 10 10 20 40 60 80 Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current (c)2002 Fairchild Semiconductor Corporation 100 10 20 40 60 80 100 Collector Current, IC [A] Fig 12. Turn-Off Characteristics vs. Collector Current SGL50N60RUFD Rev. A1 Gate - Emitter Voltage, VGE [ V ] Common Emitter V GE = 15V, RG = 5.9 T C = 25 T C = 125 ------ Switching Loss [uJ] SGL50N60RUFD 15 10000 Eoff Eoff Eon 1000 Common Emitter RL = 6 TC = 25 12 VCC = 100 V 300 V 200 V 9 6 3 0 100 10 20 40 60 80 100 0 30 Collector Current, IC [A] 60 90 120 150 180 Gate Charge, Qg [ nC ] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 500 IC MAX. (Pulsed) 100 50us IC MAX. (Continuous) Collector Current, IC [A] Collector Current, IC [A] 100 100us 1 DC Operation 10 1 Single Nonrepetitive Pulse T C = 25 Curves must be derated linearly with increase in temperature Safe Operating Area VGE = 20V, TC = 100 0.1 0.3 1 10 10 100 1 1000 1 10 Collector-Emitter Voltage, VCE [V] Fig 15. SOA Characteristics Thermal Response, Zthjc [/W] 100 1000 Collector-Emitter Voltage, V CE [V] Fig 16. Turn-Off SOA Characteristics 1 0.5 0.2 0.1 0.1 0.05 Pdm 0.02 0.01 0.01 t1 t2 single pulse Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC 1E-3 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT (c)2002 Fairchild Semiconductor Corporation SGL50N60RUFD Rev. A1 Reverse Recovery Current, I rr [A] Forward Current, I F [A] 100 10 1 V R = 200V IF = 30A T C = 25 T C = 100 ------ 10 1 0 1 2 3 4 100 Fig 18. Forward Characteristics Fig 19. Reverse Recovery Current 1400 1000 200 V R = 200V IF = 30A T C = 25 T C = 100 ------ 800 600 400 200 0 100 1000 di/dt [A/us] Fig 20. Stored Charge (c)2002 Fairchild Semiconductor Corporation V R = 200V IF = 30A T C = 25 T C = 100 ------ 180 Reverce Recovery Time, t rr [ns] 1200 1000 di/dt [A/us] Forward Voltage Drop, VFM [V] Stored Recovery Charge, Qrr [nC] SGL50N60RUFD 100 T C = 25 T C = 100 ------ 160 140 120 100 80 60 40 20 100 1000 di/dt [A/us] Fig 21. Reverse Recovery Time SGL50N60RUFD Rev. A1 (8.30) (1.00) (2.00) (7.00) 20.00 0.20 2.50 0.10 4.90 0.20 (1.50) (1.50) 2.50 0.20 3.00 0.20 (1.50) 20.00 0.50 (7.00) (2.00) (11.00) 1.50 0.20 ) .20 .00 0 0 0) 2.0 (R (R1 (0.50) o3.3 (9.00) (9.00) (8.30) (4.00) 20.00 0.20 6.00 0.20 TO-264 +0.25 1.00 -0.10 +0.25 0.60 -0.10 2.80 0.30 (2.80) 5.45TYP [5.45 0.30] (0.15) (1.50) 3.50 0.20 5.00 0.20 5.45TYP [5.45 0.30] Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation SGL50N60RUFD Rev. A1 SGL50N60RUFD Package Dimension TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2002 Fairchild Semiconductor Corporation Rev. H5