PIN Photodiodes PNZ323B PIN Photodiode Not soldered 1.5 max. 6.00.2 7.50.2 (2) 5.50.2 1.0 For optical control systems Unit : mm 4.60.2 2.3 Chip Features 22.251.0 High sensitivity, high reliability Peak sensitivity wavelength matched with infrared light emitting diodes : P = 970 nm (typ.) 1.32 0.5 31.251.0 1.50.2 Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns (typ.) 2- 0.60.1 0.5 (1.5) Wide detection area, wide acceptance half angle : = 70 deg. (typ.) Adoption of visible light cutoff resin Absolute Maximum Ratings (Ta = 25C) Parameter Symbol Ratings Unit VR 30 V Reverse voltage (DC) Power dissipation PD 100 mW Operating ambient temperature Topr -30 to +85 C Storage temperature Tstg - 40 to +100 C 0.60.1 3.80.2 (2.3) 2.54 1 2 1: Anode 2: Cathode Electro-Optical Characteristics (Ta = 25C) Parameter Symbol Conditions min typ max 50 Unit Dark current ID VR = 10V 5 Photo current IL VR = 10V, L = 1000 lx*1 31 A Sensitivity to infrared emitters SIR*2 Peak sensitivity wavelength P *3 Response time tr, tf Response time tr, tf*3 nA 4 A VR = 10V 970 nm VR = 10V, RL = 1k 50 ns VR = 10V, RL = 100k 5 s VR = 5V, H = 0.1mW/cm2 3.2 Capacitance between pins Ct VR = 0V, f = 1MHz 70 pF Acceptance half angle Measured from the optical axis to the half power point 70 deg. *1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Light source : = 940 nm *3 Switching time measurement circuit *2 Sig.IN VR = 10V (Input pulse) P = 800nm Sig.OUT ,,,, ,,,, (Output pulse) 50 90% 10% RL td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) 1 PIN Photodiodes PNZ323B PD -- Ta 60 40 ID (nA) 10 2 10 Dark current IL (A) Photo current PD (mW) 80 10 3 VR = 10V Ta = 25C T = 2856K 100 Power dissipation ID -- Ta IL -- L 10 3 120 1 VR = 10V 10 2 10 1 20 0 - 30 0 20 40 60 80 10 -1 10 100 10 2 Ambient temperature Ta (C ) 80 60 40 20 40 60 80 100 Directional characteristics 100 VR = 10V Ta = 25C Ta = 25C S (%) 80 60 Relative sensitivity S (%) 100 Relative sensitivity IL (%) Relative photo current 120 0 Ambient temperature Ta (C ) Spectral sensitivity characteristics 100 VR = 10V L = 1000 lx T = 2856K 140 10 -1 - 40 - 20 10 4 Illuminance L (lx) IL -- Ta 160 10 3 40 20 80 60 40 20 20 0 - 40 - 20 0 20 40 60 80 0 600 100 700 Ambient temperature Ta (C ) Ct -- V R 20 10 Reverse voltage VR (V) 10 2 40 80 ID -- VR VR = 10V 50 Sig. OUT RL tr td 90% 10% tf 1 Dark current 40 10 0 10 2 ,, 60 1 40 Angle (deg.) ID (nA) tr , tf (s) 80 10 -1 80 (nm) tr , tf -- RL Rise time, Fall time Ct (pF) Capacitance between pins 0 1000 1100 1200 10 2 Sig.IN 2 900 Wavelength 100 0 10 -2 800 10 -1 10 -2 10 -1 1 10 10 2 External load resistance RL (k) 10 1 10 -1 0 8 16 24 32 40 Reverse voltage VR (V) 48