1
PNZ323B
PIN Photodiode
For optical control systems
PIN Photodiodes
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Dark current IDVR = 10V 5 50 nA
Photo current ILVR = 10V, L = 1000 lx*1 31 µA
Sensitivity to infrared emitters
SIR*2 VR = 5V, H = 0.1mW/cm23.2 4 µA
Peak sensitivity wavelength
λPVR = 10V 970 nm
Response time tr, tf*3 VR = 10V, RL = 1kΩ50 ns
Response time tr, tf*3 VR = 10V, RL = 100kΩ5µs
Capacitance between pins CtVR = 0V, f = 1MHz 70 pF
Acceptance half angle θ
Measured from the optical axis to the half power point
70 deg.
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Light source : λ = 940 nm
*3 Switching time measurement circuit
50Ω
,,
,,
λ
P
= 800nm t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current
to increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current
to decrease from 90% to 10% of its initial value)
Sig.IN
,,
,,
R
L
V
R
= 10V
Sig.OUT
(Input pulse)
(Output pulse) 10%
90%
t
d
t
r
t
f
1: Anode
2: Cathode
Unit : mm
2.3
Chip 4.6±0.2
Not soldered 1.5 max.
0.5 1.0 (2)
7.5±0.2
5.5±0.2
6.0±0.2
31.25±1.0
1.5±0.222.25±1.0
(1.5)
0.5
1.32
2.54
12
3.8±0.2
(2.3)
0.6±0.1
2- 0.6±0.1
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Symbol Ratings Unit
Reverse voltage (DC) VR30 V
Power dissipation PD100 mW
Operating ambient temperature
Topr –30 to +85 ˚C
Storage temperature Tstg – 40 to +100 ˚C
Features
Fast response which is well suited to high speed modulated light
detection : tr, tf = 50 ns (typ.)
High sensitivity, high reliability
Peak sensitivity wavelength matched with infrared light emitting
diodes : λP = 970 nm (typ.)
Wide detection area, wide acceptance half angle : θ = 70 deg. (typ.)
Adoption of visible light cutoff resin
2
PIN Photodiodes PNZ323B
V
R
= 10V
I
D
— Ta
Ambient temperature Ta (˚C )
Dark current I
D
(nA)
– 40 20 60 100– 20 04080
10
1
10
–1
10
2
10
3
I
L
— Ta
160
140
120
100
80
60
40
20
Ambient temperature Ta (˚C )
Relative photo current I
L
(%)
– 20 0 20 60 8040 100
0
– 40
V
R
= 10V
L = 1000 lx
T = 2856K
C
t
— V
R
Reverse voltage V
R
(V)
Capacitance between pins C
t
(pF)
100
80
60
40
11010
2
0
20
10
–2
10
–1
Spectral sensitivity characteristics
100
80
60
40
20
Wavelength λ (nm)
Relative sensitivity S (%)
700 800 900 1000 1100 1200
0
600
V
R
= 10V
Ta = 25˚C Ta = 25˚C
P
D
— Ta
Power dissipation P
D
(mW)
120
100
80
60
40
20
Ambient temperature Ta (˚C )
0 20406080100
0
– 30
I
L
— L
10
3
10
2
10
1
Illuminance L (lx)
Photo current I
L
(µA)
10
2
10
3
10
4
10
–1
10
V
R
= 10V
Ta = 25˚C
T = 2856K
1
10
–1
0 16324882440
I
D
— V
R
Reverse voltage V
R
(V)
Dark current I
D
(nA)
10
10
2
Directional characteristics
100
80
60
40
20
080 40 0 40 80
Angle θ (deg.)
Relative sensitivity S (%)
t
r
, t
f
— R
L
10
2
10
1
10
–1
External load resistance R
L
(kΩ)
Rise time, Fall time t
r
, t
f
(µs)
11010
2
10
–2
10
–1
10%
90%
t
d
t
r
t
f
R
L
V
R
= 10V
Sig.
OUT
50Ω
Sig.IN
,
,,
