Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 70
IC @ TC = 100°C Continuous Collector Current 41 A
ICM Pulsed Collector Current 140
ILM Clamped Inductive Load Current 140
VGE Gate-to-Emitter Voltage ± 20 V
EARV Reverse Voltage Avalanche Energy 20 mJ
PD @ TC = 25°C Maximum Power Dissipation 200
PD @ TC = 100°C Maximum Power Dissipation 78
TJOperating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case) °C
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
IRG4BAC50S
Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
PROVISIONAL
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.64
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient, typical socket mount –– – 40
Wt Weight TBD ––– g (oz)
Thermal Resistance
Absolute Maximum Ratings
W
E
C
G
Features
• Standard: Optimized for minimum saturation
voltage and low operating frequencies (< 1kHz)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry Super-220™ (TO-273AA) package
• Generation 4 IGBT offers highest efficiency
• Optimized for specific application conditions
Benefits
VCES = 600V
VCE(on) typ. = 1.28V
@VGE = 15V, IC = 41A
1/19/2000
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Super-220™
(TO-273AA)
N-channel
PD - 93771
IRG4BAC50S
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Parameter Min. Typ. Max. Units Conditions
QgTotal Gate Charge (turn-on) — 18 0 28 0 IC = 41A
Qge Gate - Emitter Charge (turn-on) — 24 37 nC VCC = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) — 61 92 VGE = 15V
td(on) Turn-On Delay Time — 33 —
trRise Time — 30 — TJ = 25°C
td(off) Turn-Off Delay Time — 650 980 IC = 41A, VCC = 480V
tfFall Time — 400 600 VGE = 15V, RG = 5.0Ω
Eon Turn-On Switching Loss — 0.72 — Energy losses include "tail"
Eoff Turn-Off Switching Loss — 8.27 — mJ See Fig. 9, 10, 14
Ets Total Switching Loss — 8.99 13
td(on) Turn-On Delay Time — 31 — TJ = 150°C,
trRise Time — 31 — IC = 41A, VCC = 480V
td(off) Turn-Off Delay Time — 1080 — VGE = 15V, RG = 5.0Ω
tfFall Time — 620 — Energy losses include "tail"
Ets Total Switching Loss — 15 — m J See Fig. 11, 14
LCInternal Collector Inductance — 2.0 — nH Measured 5mm from package
LEInternal Emitter Inductance — 5 .0 —
Cies Input Capacitance — 4100 — VGE = 0V
Coes Output Capacitance — 250 — pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance — 48 — ƒ = 1.0MHz
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
V(BR)ECS Emitter-to-Collector Breakdown Voltage 18 — — V VGE = 0V, IC = 1.0A
∆V(BR)CES/∆TJTemperature Coeff. of Breakdown Voltage — 0.75 — V/°C VGE = 0V, IC = 1.0mA
— 1.28 1.36 IC = 41A VGE = 15V
VCE(ON) Collector-to-Emitter Saturation Voltage — 1.62 — IC = 80A See Fig.2, 5
— 1.28 — IC = 41A , TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJTemperature Coeff. of Threshold Voltage — -9.3 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance 17 34 — S VCE = 100V, IC = 41A
— — 250 VGE = 0V, VCE = 600V
— — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C
— — 1000 VGE = 0V, VCE = 600V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
ICES Zero Gate Voltage Collector Current
V
µA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
ns
ns
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. (See Fig. 13b)
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω,
(See Fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
IRG4BAC50S
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Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
1
10
100
1000
0.1 1 10
V , Collector-to-Emitter Volta
g
e (V)
I , Collector-to-Emitter Current (A)
CE
C
V = 15V
20
µ
s PULSE WIDTH
GE
T = 25 C
Jo
T = 150 C
Jo
1
10
100
1000
5 6 7 8 9 10
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 50V
5
µ
s PULSE WIDTH
CC
T = 25 C
Jo
T = 150 C
Jo
0
20
40
60
80
100
0.1 1 10 100
f, F re
q
uenc
y
(
kHz
)
A
60 % of ra ted
voltage
I
Ideal diodes
Square wave:
For both:
D uty cyc le: 5 0%
T = 125° C
T = 90 °C
Gate drive as specified
sink
J
Power Dissipation = 40W
Triangular wave:
I
C lamp voltage:
80% of rated
Load Current ( A )
IRG4BAC50S
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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J°
CE
V = 15V
80 us PULSE WIDTH
GE
I = A20.5
C
I = A41
C
I = A82
C
0
20
40
60
80
25 50 75 100 125 150
M ax imu m DC Co l le c to r Cu rren t (A)
T , C ase Tem perature (°C)
C
V = 15V
GE
LIM ITED BY PACK AG E
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRG4BAC50S
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Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance Fig. 10 - Typical Switching Losses vs.
Junction Temperature
040 80 120 160 200
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V= 400V
I = 41A
CC
C
-60 -40 -20 0 20 40 60 80 100 120 140 160
1
10
100
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J°
R = Ohm
V = 15V
V = 480V
G
GE
CC I = A
82
C
I = A
41
C
I = A
20.5
C
5.0Ω
1 10 100
0
2000
4000
6000
8000
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies
g
e
g
c , ce
res
g
c
oes ce
g
c
Cies
Coes
Cres
010 20 30 40 50
8.5
9.0
9.5
10.0
R , Gate Resistance (Ohm)
Total Switching Losses (mJ)
G
V = 480V
V = 15V
T = 25 C
I = 41A
CC
GE
J
C
°
RG , Gate Resistance (Ω)
IRG4BAC50S
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Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current Fig. 12 - Turn-Off SOA
020 40 60 80 100
0
10
20
30
40
I , Collector-to-emitter Current (A)
Total Switching Losses (mJ)
C
R = Ohm
T = 150 C
V = 480V
V = 15V
G
J
CC
GE
°
1
10
100
1000
1 10 100 1000
V = 20V
T = 125 C
GE
Jo
V , Collector-to-Emitter Volta
g
e (V)
I , Collector-to-Emitter Current (A)
CE
C
SAFE OPERATING AREA
5.0Ω
IRG4BAC50S
www.irf.com 7
480V
4 X IC@25°C
D.U.T.
50V
LV *
C
* Driver same t
y
p
e as D.U .T .; Vc = 80% of Vce
(
max
)
* No te: Du e to the 5 0V
p
ower su
p
p
l
y
,
p
ulse wid th an d in du cto r
will inc r ease to o b t ain ra t e d Id .
1000V
Fig. 13a - Clamped Inductive
Load Test Circuit Fig. 13b - Pulsed Collector
Current Test Circuit
480µF
960V
0 - 480V RL =
Fig. 14b - Switching Loss
Waveforms
50V
Driver*
1000V
D.U.T.
I
C
C
V
L
Fig. 14a - Switching Loss
Test Circuit
* Driver same type
as D.U.T., VC = 480V
IRG4BAC50S
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Super-220™ (TO-273AA) Package Outline
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice. 1/2000
