MTP3055VL
MTP3055VL Rev. A1
MTP3055VL
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
This N-Channel Logic Level MOSFET has been designed
specifically for low voltage, high speed switching
applications i.e. power supplies and power motor
controls.
This MOSFET features faster switching and lower gate
charge than other MOSFETs with comparable RDS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies).
June 2000
DISTRIBUTION GROUP*
Features
• 12 A, 60 V. RDS(ON) = 0.18 Ω @ VGS = 5 V
• Critical DC electrical parameters specified at elevated
temperature.
• Low drive requirements allowing operation directly from
logic drivers. Vgs(th) < 2 V.
• Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
• 175°C maximum junction temperature rating.
1999 Fairchild Semiconductor Corporation
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 60 V
VGSS Gate-Source Voltage ±15 V
IDDrain Current - Continuous 12 A
- Pulsed 42
Power Dissipation @ TC = 25°C48WPD Derate above 25°C0.32W/
°C
TJ, TSTG Operating and Storage Junction Temperature Range -65 to +175 °C
Thermal Characteristics
R
θ
JC Thermal Resistance, Junction-t o- Case 3.13 °C/W
R
θ
JA Thermal Resistance, Junction-t o- Ambi ent (Note 1) 62.5 °C/W
Package Outlines and Ordering Information
Device Marking Device Package Information Quantity
MTP3055VL MTP3055VL Rails/Tubes 45 units
* Die and manufacturing source subject to change without prior notificati on.
S
GDTO-220
S
D
G
MTP3055VL
MTP3055VL Rev. A1
Electrical Characteristics TC = 25°C unless otherwise noted
S
y
mbol Parameter Test Conditions Min Typ Max Units
DRAIN-SOURCE AVALANCHE RATINGS (Note 2)
wDSS Single Pulse Drain-Source
Avalanche Energy VDD = 25 V, ID = 12 A 72 mJ
IAR Maximum D rain-Source Avalanche Current 12 A
Off Ch aracteristics
BVDSS Drain-Source Breakdown
Voltage VGS = 0 V, ID = 250 µA60 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C55 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V 10 µA
VDS = 60 V, VGS = 0 V, TJ =
150°C100
IGSSF Gate-Body Leakage Current,
Forward VGS = 15 V, VDS = 0 V 100 nA
IGSSR Gate-Body Leakage Current,
Reverse VGS = -15 V, VDS = 0 V -100 nA
On C haracteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA11.62 V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Tem perature Coefficient ID = 250 µA, Referenced to 25°C-4 mV/°C
RDS(on) Static Drain-Source
On-Resistance VGS = 5 V,ID = 6 A, 0.100 0.180 Ω
VDS(on) Drain-Source On-Voltage
On-Resistance VGS = 5 V,ID = 12 A 2.6 V
gFS Forward Transconductance VDS = 8 V, ID = 6 A 5 8.7 S
Dynamic Ch aracteristics
Ciss Input Capacitance 345 570 pF
Coss Output Capacitance 110 160 pF
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
30 40 pF
Sw itching Ch aracteristics (Note 2)
td(on) Tu rn-On D e lay T ime 20 ns
trTu rn -O n R ise T ime 190 ns
td(off) Tu rn -O ff De lay T ime 30 ns
tfTu rn -O ff F all Time
VDD = 30 V, ID = 12 A,
VGS = 5 V, RGEN = 9.1 Ω
90 ns
QgTotal Gate Charge 7.8 10 nC
Qgs Gate-Source Charge 1.7 nC
Qgd G at e-D ra in C h a rge
VDS = 48 V,
ID = 12 A, VGS = 5 V
3.2 nC
Drain-Source Diode C haracteristics and M aximu m R atings
ISMaximum C ontinuous Drain-Source Diode Forward Current (Note 2) 12 A
ISM Maximum Pulsed Drain-Source Diode Forward Current (Note 2) 42 A
VSD Drain-Source Diode Forward
Voltage VGS = 0 V, IS = 12 A (Note 2 ) 1.3 V
trr Drain-Source Reverse Recovery
Time IF =12 A, di/dt = 100A/µs55 nS
Notes:
1. RθJA is the sum of the juntion-to-case and case-to-ambient thermal resistance.
2. Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS P ATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF F AIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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