ZXMN3A01F
Document number: DS33528 Rev.4 - 2
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D
S
G
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
RDS(ON)
30V
0.12Ω @ VGS = 10V
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC Converters
Power Management Functions
Motor Control
Features
Low On-Resistance
Fast Switching Speed
Low Threshold
Low Gate Drive
Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish Annealed over Alloy 42
Leadframe)
Terminal Connections: See Diagram
Weight: 0.006 grams (Approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
ZXMN3A01FTA
SOT23
3,000/Tape & Reel
ZXMN3A01FTC
SOT23
10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
e3
Top View
D
GS
Top View
Pin Configuration
Equivalent Circuit
7N3 = Product Type Marking Code
7N3
ZXMN3A01F
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current, VGS = 10V
(Note 6)
(Note 6)
(Note 5)
TA = +25°C
TA = +70°C
TA = +25°C
ID
2.0
1.6
1.8
A
Pulsed Drain Current (Note 7)
IDM
8
A
Maximum Body Diode Continuous Current (Note 6)
IS
1.3
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation
Linear Derating Factor
(Note 5)
PD
625
mW
5
mW/°C
Total Power Dissipation
Linear Derating Factor
(Note 6)
PD
806
mW
6.4
mW/°C
Thermal Resistance, Junction to Ambient
(Note 5)
RθJA
200
°C/W
(Note 6)
155
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes: 5. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on FR-4 PCB measured at t≦5 secs.
7. Repetitive rating 25mm x 25mm FR-4 PCB, D = 0.05, pulse width 10μs - pulse width limited by maximum junction temperature. Refer to Transient
Thermal Impedance graph.
ZXMN3A01F
Document number: DS33528 Rev.4 - 2
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
30
V
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
IDSS
0.5
µA
VDS = 30V, VGS = 0V
Gate-Body Leakage
IGSS
100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
1
2.5
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance (Note 8)
RDS(ON)
0.11
0.12
VGS = 10V, ID = 2.5A

0.18

VGS = 4.5V, ID = 2A
Forward Transconductance
gFS
3.5
S
VDS = 4.5V, ID = 2.5A
Diode Forward Voltage (Note 8 & 10)
VSD
0.85
0.95
V
VGS = 0V, IS = 1.7A, TJ = +25°C
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Ciss
190
pF
VDS = 25V, VGS = 0V,
f = 1MHz
Output Capacitance
Coss
38
Reverse Transfer Capacitance
Crss
20
Gate Charge (Note 9)
Qg

2.3

nC
VDS = 15V, VGS = 5V, ID = 2.5A
Total Gate Charge (Note 9)
Qg
3.9
VDS = 15V, VGS = 10V,
ID = 2.5A
Gate-Source Charge (Note 9)
Qgs
0.6
Gate-Drain Charge (Note 9)
Qgd
0.9
Turn-On Delay Time (Note 9)
tD(on)
1.7
ns
VDD = 15V , ID = 2.5A,
RG = 6Ω, VGS = 10V
Turn-On Rise Time (Note 9)
tr
2.3
Turn-Off Delay Time (Note 9)
tD(off)

6.6

Turn-Off Fall Time (Note 9)
tf

2.9

Reverse Recovery Time
trr

17.7

ns
TJ = +25°C, IF = 2.5A, di/dt= 100A/µs
Reverse Recovery Charge
Qrr

13

nC
Notes: 8. Measured under pulsed conditions. Width=300μs. Duty cycle ≦ 2%.
9. Switching characteristics are independent of operating junction temperature.
10. Guaranteed by design. Not subject to production testing.
ZXMN3A01F
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ZXMN3A01F
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03
0.915
F
0.45
0.60
0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013
0.10
0.05
K
0.890
1.00
0.975
K1
0.903
1.10
1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085
0.150
0.110
a
8°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Dimensions
Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
J
K1 K
L1
GAUGE PLANE
0.25
H
L
M
All 7°
A
CB
D
G
F
a
XE
Y
C
Z
ZXMN3A01F
Document number: DS33528 Rev.4 - 2
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