2N2060 CRYSTALONCS 2805 Veterans Highway ili Suite 14 Dual NPN Silicon ee : . onkoma, 11 Small-Signal Transistor 778 .designed for general-purpose amplifier applications. Operation MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VcEO 60 Vde Collector-Base Voltage VCBO 100 Vdc Emitter-Base Voltage VEBO 7.0 Vdc Caliector Current Continuous tc 500 mAdc All Die One Die Equal Power Device Dissipation Pr @Ta=25C 540 00 mw Derate above 25C ae 34 mwic Watts @Tc =25C 8.6 12.1 mwWeC Derate above 25C CASE 654-07, STYLE 1 Operating Junction and Storage Ty. Tstg -65 to 200 C 10-78 Temperature Range ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voitage(t) ViBR)CEO 60 - Vde (Ig = 30 mAde, Ig = 0) Collectar-Emitter Breakdown Voitage() V(BRICER BO - Vde {Ic = 100 mAdc, Ape = 10 ohms max) Collector-Base Breakdown Voltage ViBR}CBO 100 a Vdc (Ic = 100 uAde. Ie = 0) Emitter-Base Breakdown Voltage V(BR)EBO 7.0 _ Vde (Ie = 100 pAde, Io = 0) Collector Cutoff Current IcBO (Vc = 80 Vdc) _ 20 nAde (Veg = 80 Vde, Ta = 150C) _ 10 pAdc Base Cutoff Current 'EBO _ 2.0 nAdc (Vge = 5.0 Vde) {11 Pulsed. Pulse Width 250 to 350 js Duty Cycle 10 to 2.0% iconinved}2N2060JAN SERIES ELECTRICAL CHARACTERISTICS Continued (Tg = 25C unless otherwise noted.) ON CHARACTERISTICS DC Current Gain (ic = 10 wAde, VE = 5.0 Vee} (Ic = 100 wAde. Vege = 5.0 Vde) (lc = 1.0 mAdc. Vee = 5.0 Vde} fI = 10 MAde. Vg = 5.0 Vde)l!) (Ic = 100 wAde, VCE = 5.0 Vdc. Ta = -5C) Collector-Emitter Saturation Voltage (Ic = 50 mAdc. ig = 5.0 mAde) Base-Emitter Saturation Voltage (Ic = 50 mAdc, ig = 5.0 mAdc) SMALL-SIGNAL CHARACTERISTICS Output Capacitance (VoB = 10 Vdc. le =0,f=0.1to 1.0 MHz) VBE(sat) Input Capacitance (Vp = 0.5 Vac. i = 0. f= 0.1 to 1 0 MHz) Noise Figure (Ic = 300 wAde, Voce = 10 Vde) (t= 1.0 kHz, Rg = 510 ohms) (f = 10 KHz, Rg = 1.0 kohms) Current Gain (ig = 1.0 Ade. Vcg = 5.0 Vde. f= 1.0 kHz) Small-Signai Current Transfer Ratio, Magnitude {Ic = 50 mAdc, VCE = 10 Vde, f = 20 MHz) input Impedance (ig = 1.0 mAdc, Vog = 5.0 Vdc. f= 1.0 kHz) Input Impedance (Ig = 1.0 mAde. Veg = 5.0 Vide. f = 1.0 kHz) Output Admitiance (ig = 1.0 MAde, Vicg = 5.0 Vado, f = 1.0 kHz) MATCHING CHARACTERISTICS DC Current Gain Ratio (Ic = 100 Ade. Veg = 5.0 Vdeyl2) (ic = 1.0 mAde, Vog = 5.0 Vde)(2) Base-Emitter Voltage Differential (Ig = 100 wAde. VCE = 5.0 Vdc) {ig = 1.0 mAde. VCE = 5.0 Vda) \Base-Emitter Voltage Differential over Temperature (Ig = 100 pAde. Vog = 5.0 Ve, Ta = 25 to -55'C) {ic = 100 wAde. VCE = 5.0 Vac, Ta = 25 to 125C) Callector to Collector Leakage Current (C1C2 = 100 Vdc) (1) Pulsed. Pulse Width 250 to 350 us, Duty Cycle 1 G02 or, (2 The iarger number will be placed in the denominator,