Data Sheet Fast recovery diodes RF1001T2D Applications General rectification Dimensions (Unit : mm) Structure 4.50.3 0.1 Features 1) Cathode common type. (TO-220) 2) Ultra Low V F 3) Very fast recovery 4) Low switching loss 8.0 13.5MIN 5.00.2 8.00.2 12.00.2 15.00.4 0.2 (1) (2) (3) 1.2 Construction Silicon epitaxial planar 2.80.2 0.1 10.00.3 0.1 1.3 0.8 0.70.1 0.05 (1) (2) (3) 2.60.5 ROHM : TO220FN Manufacture Date Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Reverse voltage (repetitive peak) 200 VRM Reverse voltage (DC) 200 VR Average rectified forward current (*1) 10 Io Forward current surge peak (60Hz/1cyc) 80 IFSM Junction temperature 150 Tj Storage temoerature 55 to 150 Tstg (*1)Business frequencies, Rating of R-load, Tc=126 C. 1/2 Io per diode Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Reverse recovery time Thermal impedance www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. Symbol VF Unit V V A A C C Min. - Typ. 0.87 Max. 0.93 Unit V IR - 0.01 10 A trr - 15 - 30 2.5 ns j-c 1/3 C/W Conditions IF=5A VR=200V IF=0.5A, IR=1A, Irr=0.25*I R JUNCTION TO CASE 2011.05 - Rev.D Data Sheet RF1001T2D Electrical characteristics curves 10000 10 1000 Ta=150C f=1MHz Ta=125C 0.1 Ta=-25C Ta=75C 0.01 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25C 1 Ta=125C 1000 REVERSE CURRENT:IR(nA) FORWARD CURRENT:I F(A) Ta=150C Ta=75C 100 Ta=25C 10 Ta=-25C 1 100 10 0.001 0 100 200 300 400 500 600 700 800 900 100 110 120 0 0 0 0.1 1 0 100 0 870 860 850 840 80 70 60 50 40 AVE:10.7nA 30 175 170 165 160 155 0 150 AVE:174.9pF Ct DISPERSION MAP 1000 150 100 50 Ta=25C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 Ifsm PEAK SURGE FORWARD CURRENT:I FSM(A) REVERSE RECOVERY TIME:trr(ns) 200 30 180 IR DISPERSION MAP 250 8.3ms 100 15 10 5 8.3ms 1cyc 10 AVE:14.5ns AVE:167.0A 1 0 0 1 100 TRANSIENT THAERMAL IMPEDANCE:Rth (C/W) 1cyc 8.3ms 100 10 20 Mounted on epoxy board IF=5A IM=100mA 15 Rth(j-a) 10 1ms time 300us Rth(j-c) 1 www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 100 0.001 DC D=1/2 Sin(=180) 10 5 0 0.1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS FORWARD POWER DISSIPATION:Pf(W) 1000 Ifsm 10 trr DISPERSION MAP IFSM DISPERSION MAP 1 185 10 30 j-c 190 20 VF DISPERSION MAP 300 25 Ta=25C f=1MHz VR=0V n=10pcs 195 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 880 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 200 Ta=25C VR=200V n=30pcs 90 REVERSE CURRENT:IR(nA) Ta=25C IF=5A n=30pcs AVE:857.4mV PEAK SURGE FORWARD CURRENT:I FSM(A) 200 100 890 PEAK SURGE FORWARD CURRENT:I FSM(A) 150 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS FORWARD VOLTAGE:V F(mV) 50 0.01 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 2/3 100 1000 0 5 10 15 20 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 2011.05 - Rev.D Data Sheet RF1001T2D 30 30 0V VR t T DC 15 25 D=t/T VR=100V 20 Tj=150C D=1/2 10 Sin(=180) 5 30 0A Io 0V VR t 20 DC 15 T D=t/T VR=100V Tj=150C D=1/2 10 Sin(=180) 5 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(C) Derating Curve"(Io-Ta) www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. No break at 30kV 20 15 10 5 0 0 0 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 25 0A 0 25 50 75 100 CASE TEMPARATURE:Tc(C) Derating Curve"(Io-Tc) 3/3 125 150 C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP 2011.05 - Rev.D Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. R1120A