Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Fast recovery diodes
RF1001T2D
Applications Dimensions (Unit : mm) Structure
General rectification
Features
1) Cathode common type.
(TO-220)
2) Ultra Low VF
3) Very fast recovery
4) Low switching loss
Construction
Silicon epitaxial planar
Absolute maximum ratings (Ta=25C)
Symbol Unit
VRM V
VRV
Io A
IFSM A
Tj C
Tstg C
Electrical characteristic (Ta=25C)
Symbol Min. Typ. Max. Unit
VF- 0.87 0.93 V IF=5A
Reverse current IR- 0.01 10 μAVR=200V
Reverse recovery time trr - 15 30 ns IF=0.5A, IR=1A, Irr=0.25*IR
Thermal impedance j-c - - 2.5 C/W JUNCTION TO CASE
Conditions
(*1)Business frequencies, Rating of R-load, Tc=126 C. 1/2 Io per diode
Parameter
80
Junction temperature 150
Storage temoerature 55 to 150
Forward voltage
Parameter Limits
Reverse voltage (repetitive peak) 200
Reverse voltage (DC) 200
Average rectified forward current (*1) 10
Forward current surge peak (60Hz/1cyc)
(1) (2) (3)
ROHM : TO220FN
Manufacture Date
1.2
1.3
0.8
(1) (2) (3)
10.0±0.3
0.1
5.0
±
0.2
8.0±0.2
12.0±0.2
2.8±0.2
0.1
4.5±0.3
0.1
0.7±0.1
0.05 2.6±0.5
13.5MIN
8.0
15.0±0.4
0.2
1/3 2011.05 - Rev.D
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RF1001T2D 　
Electrical characteristics curves
j-c
0.001
0.01
0.1
1
10
0 100 200 300 400 500 600 700 800 900 100
0
110
0
120
0
Ta=75C
Ta=125C
Ta=150C
Ta=25C
Ta=-25C
0.1
1
10
100
1000
10000
0 50 100 150 200
Ta=150C
Ta=-25C
Ta=75C
Ta=125C
Ta=25C
1
10
100
1000
0 5 10 15 20 25 30
f=1MHz
0
10
20
30
40
50
60
70
80
90
100
840
850
860
870
880
890
0
5
10
15
20
25
30
AVE:14.5ns
Ta=25C
I
F
=0.5A
I
R
=1A
Irr=0.25*I
R
n=10pcs
1
10
100
1000
1 10 100
8.3ms
Ifsm
1cyc
8.3ms
0
5
10
15
20
0 5 10 15 20
D=1/2
DC
Sin(θ=180)
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
1ms
IM=100mA
I
F
=5A
300us
time
Mounted on epoxy board
10
100
1000
110100
8.3ms
Ifsm 1cyc
FORWARD VOLTAGE:V
F
(mV)
V
F
-I
F
CHARACTERISTICS
FORWARD CURRENT:I
F
(A)
REVERSE CURRENT:I
R
(nA)
REVERSE VOLTAGE:V
R
(V)
V
R
-I
R
CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:V
R
(V)
V
R
-Ct CHARACTERISTICS
V
F
DISPERSION MAP
FORWARD VOLTAGE:V
F
(mV)
REVERSE CURRENT:I
R
(nA)
I
R
DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
TIME:t(ms)
I
FSM
-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (C/W)
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
trr DISPERSION MAP
REVERSE RECOVERY TIME:trr(ns)
150
155
160
165
170
175
180
185
190
195
200
AVE:174.9pF
Ta=25C
f=1MHz
V
R
=0V
n=10pcs
Ta=25C
V
R
=200V
n=30pcs
AVE:10.7nA
Ta=25C
I
F
=5A
n=30pcs
AVE:857.4mV
0
50
100
150
200
250
300
AVE:167.0A
I
FSM
DISPERSION MAP
2/3 2011.05 - Rev.D
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RF1001T2D 　
0
5
10
15
20
25
30
0 25 50 75 100 125 150
DC
D=1/2
Sin(
=180)
0
5
10
15
20
25
30
0 25 50 75 100 125 150
D=1/2
DC
Sin(=180)
AMBIENT TEMPERATURE:Ta(C)
Derating Curve"(Io-Ta)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
CASE TEMPARATURE:Tc(C)
Derating Curve"(Io-Tc)
T
Tj=150C
D=t/T
tV
R
Io
V
R
=100V
0
A
0V
T
Tj=150C
D=t/T
tV
R
Io
0A
0V
0
5
10
15
20
25
30
No break at 30kV
C=100pF
R=1.5k
C=200pF
R=0
No break at 30kV
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
V
R
=100V
3/3 2011.05 - Rev.D
R1120A
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© 2011 ROHM Co., Ltd. All rights reserved.
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Notes