TEXAS INSTR {OPTO} be DE ff s4u1726 OO3b97b 4 I om | 8961726 TEXAS INSTR COPTO) 62C 36976 D PA TIPG45, TIP646, TIP647 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 @ Designed For Complementary Use With TIP640, TIP641, TIPG642 T-33-31 @ 175 Wat 25C Case Temperature . @ 10 A Rated Collector Current MinhFEof 1000 at4V,5A @ 100 mJ Reverse Energy Rating device schematic oe 10-3 PACKAGE be ee od THE COLLECTOR (S IN ELECTRICAL CONTACT WITH THE CASE absolute maximum ratings at 25C case temperature (unless otherwise noted) TIP64S | - i current current current areas at case temperature at case temperature at temperature energy storage temperature range mm case o 2 > a Q. Ee NOTES: 1. This value applies for ty, < 0.3 ms, duty cycle < 10 %. 2. Derate linearly to 200C case temperature at the rate of 1 W/C or refer to Dissipation Derating Curve, Figure 9. 3. Derate linearly to 200C free-air temperature at the rate of 28.6 mW/C or refer to Dissipation Derating Curve, Figure 10. 4. This rating is based on the capability of the transistors to operate safely in the circuit of Figure 2. & = 20 mH, Rag? = 1002, Vep2 = OV,Rs = 0.12, Voce = 20V, Energy=ic2L/2. - TE se wee TEXAS ap 1283 5-235 INSTRUMENTS POST OFFICE BOX 225012 @ DALLAS, TEXAS 75265TEXAS INSTR {OPTO} be DE acu172b 003497? & I 8961726 TEXAS INSTR (OPTO) e2c 36977 | T-33- TIP645, TIP646, TIP647 33-31 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS . electrical characteristics at 25C case temperature PARAMETER TEST CONDITIONS TIP645 THREE Vv (BRICEO See Note 5 IcEO IcBo CE= . = , See Notes 5 and 6 : CE = 4V, See Notes 5 and 6 CE ~4V, . j Vv, ! BE See Notes 5 and 6 ' See Notes 5 and 6 See Notes 5 and6 See Notes 5 and 6 hee Vck{sat) Ve NOTES: 5, These parameters must be measured using pulse techniques, ty = 300s, duty cycle < 2%, 6. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts and located | within 3,2 mm {0.125 inch} from the device body. resistive-load switching characteristic at 25C case temperature PARAMETER TEST CONDITIONST MIN TYP MAX | UNIT ton Ic = 10A, 1B1 = 40mA, ip2 = 40 mA, 0.9 : Toff Veet) = 42V, AL = 32, See Figure 1 7 K Tt Voltage and current values shown are nominal; exact values vary slightly with transistor parameters, a 0 oO SIDING i . TEXAS % 6-238 INSTRUMENTS ad POST OFFICE BOX 225012 DALLAS, TEXAS 75265 I - wre wee nt i ae ee ey Se er ae eeTEXAS INSTR {OPTO} Le DE ff sa61726 O03b978 6 i 8961726 TEXAS INSTR COPTO) ; 62C 36978 eS . TIP645, TIP646, TIP647 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS 7 PARAMETER MEASUREMENT INFORMATION T-33-31 INPUT : MONITOR . : rc _1N914 Resi 500.0 1N914. 1NQ14 1N914 270 pF BT son $ > Rap2 = 1509 pp=30 * Vv, gen i+ = Vpg2-4.2V eH _ : ~ = Vcc =30V } Vep1 = 44V a * ADJUST FOR . Von *42 V AT + . INPUT MONITOR y TEST CIRCUIT INPUT 42y tom . . _ Monitor V ' > , . | Von =~ 42V --t 80% ; t OUTPUT ~ 90% \ MONITOR 1 10% VOLTAGE WAVEFORMS NOTES: A. Vgen/s@ 30-V pulse into a 502 termination. The Vgen waveform is suppiied by a generator with the following characteristics: t,; < 15 ns, te< 15ng, Zoyt = 502, tw = 20ys, duty cycle < 2 %. . Waveforms are monitored on an oscifloscope with the following characteristics: t-< 15ns, Rin = 10 M2, Ci, < 11.5 pF. Resistors must be noninductive types. . The d-c power supplies may require additional bypassing in order to minimize ringing. moO o> TIP Devices PGu FIGURE 1. RESISTIVE-LOAD SWITCHING i - 4 TEXAS 4 ; INSTRUMENTS 5-237 POST OFFICE BOX 225012 DALLAS, TEXAS 75285 [oaTEXAS INSTR {OPTOF be pe 8961726 0036979 O 7 8961726 TEXAS INSTR COPTO) 62c 36979 oo | -. T-33~-31 : TIP645, TIP646, TIP647 J P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS ; eee PARAMETER MEASUREMENT INFORMATION Vog MONITOR ' , ee 9 : BI \ p ! 20 mH 2N6128 U 50 2 1.5ko ' 1 ' Tu i rer Regge = 100 82 ' ' = Voc =20V a * : 7 tc MONITOR } ' i = Vep1=10V Rg-012 : 4 TEST CIRCUIT ty = 7 ms ! 7 a (See Note A) - | | BV --- INPUT VOLTAGE COLLECTOR i CURRENT COLLECTOR voutace ~20V t Vier)cer -- t- -LJ--~- VOLTAGE AND CURRENT WAVEFORMS SOOIA9Q dL NOTEA: input pulse duration is increased until leony = 3.164. - FIGURE 2. INDUCTIVE-LOAD SWITCHING a . TEXAS 5-238 INSTRUMENTS 8 POST OFFICE BOX 225012 @ DALLAS, TEXAS 75265otf TEXAS INSTR LOPTO} be DE ff anu1726 003854 a 8961726 TEXAS INSTR (OPTO)> 62C 35980 B f > * a nee 7 4 . -t rt TIP645, TIP646, TIP647 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS T-33-31 STATIC FORWARD CURRENT TRANSFER RATIO BASE EMITTER VOLTAGE | VS vs i COLLECTOR CURRENT CASE TEMPERATURE i o 4k 4 = 3.6 VcE=-4V . ec = 100C > . See Notes 5 and 6 ; 73.2 e ee Te = 25C S28 I= ~10A 1k S$ 24 5 : g To = 55C -. 7 wi E 400 e 16 6 a . Oe 1 71.2 2 0.8 1 = w VcE=~4V 0.4 in See Notes 5 and 6 = 100 0 -0.4 -1 4 -10 75 -25 0 25 75 125. 175 Ic Collector Current A Tc Case Temperature C FIGURE 3 FIGURE 4 SMALL-SIGNAL COMMON-EMITTER ! COLLECTOR-EMITTER SATURATION VOLTAGE - FORWARD CURRENT TRANSFER RATIO vs vs > CASE TEMPERATURE 6 FREQUENCY -4 *% 100 = and 6 VcE=-10 V g = Ig=-1A 5 B=40mA,Ic=10A g 40 Tc = 26C 's =-10n = E i 8 Ip =10 mA, Ic =-5A & | 2 10 2 z g > & _,|_ ta=-2ma Ios -1A o 5 u a : 4 o. a i 3 re 3 & a i W 0.4 w 1 > -75 -25 0 25 75 125 175 | 4 10 | Tc Case Temperature - # Frequency MHz : FIGURE 5 FIGURE 6 NOTES: 5. These parameters must be measured using pulse techniques, ty = 300 ps, duty cycle < 2 %. 6. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts and located within 3,2 mm (0.125 inch} from the device body. ; wa , 1288 TEXAS - 5-239: INSTRUMENTS i POST OFFICE BOX 226012 @ DALLAS, TEXAS 75265 Il | |TEXAS INSTR {fOPTO} be DE ff acu1726 OO3b4a41 4 7 a 8961726 TEXAS INSTR (OPTO) 62c 36981 p ! TIP645, TIPG46, TIPG47 T-33-31 ' P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS Tana MAXIMUM SAFE OPERATING AREA MAXIMUM COLLECTOR CURRENT . MAXIMUM COLLECTOR CURRENT vs > COLLECTOR-EMITTER VOLTAGE _ 10 UNCLAMPED INDUCTIVE LOAD ~ 20 j Voc =20V a D-C Operation rd Rep = 1002 ; 10 Te <25c i To = 28C E See Figure 2 = s = oO Oo -4 o_o 2 3 10 g 8 3 3 E E _4 z -1 = x % S i = = 4 -04 TIP646 o TIP647 See 0.2 -1 10 -40 100 400 04 1 4 10 40 100 400 VceE Collector-Emitter Voltage V L Unclamped Inductive Load -~mH |. FIGURE 7 FIGURE 8 NOTE 7: Above this point the safe operating area has not been defined. i THERMAL INFORMATION CASE TEMPERATURE FREE-AIR TEMPERATURE DISSIPATION DERATING CURVE = DISSIPATION DERATING CURVE * 200 17 5 8 8 3 6 g 160 Z 2 > B 120 2 A g a Reso <TC : 4 N A < 3 3 KA, [Resa S38erW = g 23 . 2 = 80 = NX na 8 o 2 Ee 2 40 E N\ 3 1 5 & N | 2 1 | oo lo c oO 50 100 160 200 = 9 2 50 75 100 125 150 175 200 Tc ~ Case Temperature C TA Free-Air Temperature C FIGURE 9 FIGURE 10 , we 5-240 TEXAS 1283 INSTRUMENTS POST OFFICE BOX 225012 @ DALLAS. TEXAS 75265