| Ordering number: EN 930C | 28B892/2SD1207 PNP/ NPN Epitaxial Planar Silicon Transistors Large-Current Switching Applications - APPLICATIONS * Power supplies, relay drivers, lamp drivers, and automotive wiring FEATURES - FBET and MBIT processed {Original process of SANYO) * Low saturation voltage * Large current capacity and wide ASO Values for 2568892 shown in( } ABSOLUTE MAXIMUM RATINGS/Ta=25C unit Collector to base voltage Vcgo {-)60 V Collector to emitter voltage VcEO {)50 Vv Emitter to base voltage Vego (-}6 Vv Collector current le {-)2 A Collector Current(Pulse) Icp (}4 A Allowable collector dissipation Po 1 W Junction temperature Tj 150 c Storage ambient temperature T 51g 55~+150 C ELECTRICAL CHARACTERISTICS/Ta=25C min typ max unit Collector cut-off current lcpo Vepzl)50V, I_=0 {)0.1 BA Emitter cut-off current lEBO Veg=(-)4V, [p=0 (-}0.1 BA ~~ DC current gain hee(t* Vog=lJ2V, |e=l-]100mA 100 560 hepl2) Veerl-)2V, la=(-)1.54 40 Gain-bandwidth product fy Vog=(-)10V, Ip=(}50mA 150 MHz Output capacitance Cob Voegut)10V, f= 1MHz 12 pF (22) pF Collector-emitter saturation voltage VCE (sat) Ip={-)1A, Ig=(-)50mA 0.15 0.4 Vv {+0.3) (0.7) Vv Base-emitter saturation voltage VBE(sat} IGH{-}1A, Ig={)50mA (}0.9 (-}1.2 Vv Collector-base breakdown voltage Vig RICBO Ig={)10pA, Ip=0 ()60 Vv Collector-emitter breakdown voltage ViBR)CEO loHt}1mA, Reem ()50 Vv Emitter-base breakdown voltage Vip R)EBO Ip={)10uA, Io=0 ()6 V * 288892 and 2501207 are graded as follows by hee at 100mA: 100 R 200) 140 S$ 280 | 200 T 400 | 280 U 560 0.5 Package Dimensions 2006A (unit: mm) it 2 5 g . wa | EIAS: SC-51 B: Base | SANYO: MP C: Collector : E: Emitter SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg, 1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN ed ee ee 4067K1/3145KI/ No.930-1/4 6 $ 8 8 8 Collector current, Ig mA 3 26 ! 1 1 1 2 m = " oe a Lad oO Collector current, le -A l 2 + 1200 8 | 8 | & 8 Collector current, !. mA I 1 A 8 g DC current gain, hee 8 = 2SB892/2SD1207 Ic - Vce 2SB892 3mA 2mA ImA | l Ip=0 ~2 4 -6 8 -100 0-12 Collector-emitter voltage, Vce-V Ic - YCE | 258372 a -04 -08 12 =-16 20 Collector-emitter voltage, Vee -V Ic - VBE 24 283892 Von= 2 | 02 -04 06 -O8 -10 -1 Base-emitter voltage, VBE -V hre - I 28B892 Vong = 2V =100 =1000 Collector current, le mA DC current gain, hee 8 wn 100 3 1200 25D 1207 < = 1000 | = e 2 = o Sg u 2 & 200 0 0 2 4 6 8 10 2 Collector-emitter voltage, Vcr -V 24 lc OE | he ; 4301207 3 mo < 20 f se | | | oO L Ls | 1.4 . = { _y 5 yom E 12 . 4 Fs | get = 0.8 _ week | 8 0% a 2m . i i Ip=OmA 0 04 0.8 12 1.6 2.0 24 Collector-emitter voltage, Vee -V 1200 Ie . VBE | AN1207 < 10 Vie eV E ! 0 | 4 i 5 60 - _ I 2 | g ~ 3 / 2 SB 200 - 4--__ oO 0 O 62 04 05 0.8 i) ha Base-emitter voltage, VeE V hee - I 1000 FE Cc AOL POF7 Veg ev 3 7io 2 5 Collector current, le mA No.930-2/4 seme ae eee A RETR 258892/2SD1207 fy - Ic g 288892 Vog = 10 Gain-bandwidth product, tf MHz 8 0 -10 ~190 -1000 Collector current, le mA 3 Cob - Vcp " | 298892 a | f= MHz | 4 o 7 o Cc o 4 S ~~ : ~ Qa 5 10 oO gy | a J 3 -10 3 2 ~00 Collector to base voltage, Veg V 100 Vee(sat) ~ Ic o> 233892 ! In 7 Ip 20 or 2 > 8 s we" BO 5 c> 2 2 8 iio a 5 z E 2 b ne -61 FS 5 5 2 8 2 70.01 6 -1000 2 -10900 23 Collector current, lo mA Po -T 1200 C a 238892 / 28D 1207 3 N\ 3 Yo aN b S NS 8 Collector dissipation, Po mw n 8 ~ Ambient temperature, Ta C CG 2 40 60 # 106 120 140 160 fT - Ic 230 1207 =10V Gain-bandwidth product, f> MHz 8 3 3 100 1000 Collector current, le mA Cab - YB 00 28D1207 uo | f=1MHa2 | oO : o o 4 eo | = Aas 3 = ; ow t . : a Pp 2 SY & 1 | i Ps ; | | 1 a FS 10 =F 100 Collector to base voltage, Von V - I - 5100 ce(sat) - ! & 2301207 #ls Ig/ 13=29 oO 2 > 3B 5 wo we oO e> 2 2 B10 5 : 4! we 1 a B 5 2 3 2 oO 0.01 5 100 1000 Collector current, Ic mA 0 ASQ 28B892/2SD1207 <x | 1 = c o E = oO 6 01 g oO & oO o 7 ' (Negative signs om for ) 10 1 100 Collector to emitter voltage, Voe-V ~ No.930-3/4 25B892/25D1207 MENo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property joss. Mi Anyone purchasing any products described or contained herein for an above-mentioned use shall: @ Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and alf claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD. its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Mi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production, SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, No.930-4/4 eee eee eA