P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 SEPT 93
FEATURES
* 45 Volt VDS
*R
DS(on)=14Ω
REFER TO ZVP2106A FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS -45 V
Continuous Drain Current at Tamb
=25°C ID-230 mA
Pulsed Drain Current IDM -3 A
Gate-Source Voltage VGS ±20 V
Power Dissipation at Tamb
=25°C Ptot 700 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS -45 V ID=-100µA, VGS=0V
Gate-Source
Threshold Voltage
VGS(th) -1 -3.5 V ID=-1mA, VDS=VGS
Gate Body Leakage IGSS -20 nA VGS=-15V, VDS=0V
Zero Gate Voltage
Drain Current
IDSS -500 nA VGS=0V, VDS=-25V
Static Drain-Source
on-State Resistance (1)
RDS(on) 14 ΩVGS=-10V, ID=-200mA
Forward
Transconductance (1)(2)
gfs 150 mS VDS=-10V, ID=-200mA
Input Capacitance (2) Ciss 60 pF VGS=0V, VDS=-10V
f=1MHz
Turn-On Time (2)(3) t(on) 20 ns VDD
≈-25V, ID=-500mA
Turn-Off Time (2)(3) t(off) 20 ns
(1) Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% (2) Sample test
(3) Switching times measured with a 50Ω source impedance and <5ns rise time on a pulse generator
BS250P
3-28
D
G
S
E-Line
TO92 Compatible
