[INTERSIL 2N6660-1 n-Channel Enhancement-mode FEATURES High speed, high current switching Current sharing capability when paralleled Directly interface to CMOS, DTL, TTL logic Simple DC biasing Extended safe operating area Inherently temperature stable * Typical ton and tor < Sns ABSOLUTE MAXIMUM RATINGS (Ta = 25C unless otherwise noted) Drain-source Voltage IVN6660 0... eee eee eens 60V IVN6661 0... cece cee nee ene 90V Drain-gate Voltage IVN6660 0. eee ee teens 60V IVNG661 0 ec cee eer ene nnes 90V Continuous Drain Current (see note 1) ......... 2.0A Peak Drain Current (see note 2) ............005 3.0A Continuous Forward Gate Current ............ 2.0mA Peak-gate Forward Current...............065 100mA Peak-gate Reverse Current .........--......5 100mA Gate-source Forward (Zener) Voltage .......... +15V Gate-source Reverse (Zener) Voltage.......... -0.3V Continuous Device Dissipation at (or below) 25C Case Temperature ............ 0.00000 8.33W Linear Derating Factor .................... 67mMW/C Operating Junction . Temperature Range.............-.- -55 to +150C Storage Temperature Range.......... -55 to +150C Lead Temperature (1/16 in. from case for 10 sec) ............. +300C Note 1. Tc = 25C: controlled by typical rps(on) and maximum power dissipation. Note 2. Pulse width 80usec, duty cycle 1.0%. Note 3. The Drain-source diode is an integral part of the MOSFET structure. 2-39 Vertical Power MOSFET APPLICATIONS Switching power supplies DC to DC inverters CMOS and TTL to high current interface Line drivers Logic buffers Pulse amplifiers High frequency linear amplifiers SCHEMATIC DIAGRAM (OUTLINE DWG. TO-39) DRAIN (see note 3) he I x 1 GATE 1 k- 7 SOURCE 3 2 ORAIN 1 . GATE SOURCE Body internally connected to source. Drain common to case. CHIP TOPOGRAPHY hu so 2N6660-1 INTERSIL ELECTRICAL CHARACTERISTICS (25C unless otherwise noted) IVN6660 IVN666T CHARACTERISTIC MIN | TYP | MAX | MIN | TYP | MAX UNIT TEST CONDITIONS 1 = = + BVoss Drain Source Breakdown 60 20 Vgs = 0. Ip = 10uA 2 60 90 Vv Vas = 0, to = 2.5mA 3 VGSith! Gate Threshold Voltage 0.8 2.0 0.8 2.0 Vos = Vas, lo = 1mA 4 0.5 100 0.5 100 Vos = 15V, Vos = 0 I sass Gate-Body Leakage . 5 y 9 500 500 | * [Ves - 18V. Vos = 0, Ta = 125C|(Note 2) 618 10 10 Vos = Max. Rating, Ves = 0 T = i = = 128 7 | a | oss Zero Gate Voltage Drain Gurrent 500 soo | A (Not a Max. Rating, Vas = 0, Ta= 126C e . -| T 8 1 100 100 nA_ | Vos = 25V, Ves = 0 9 c Ipton! ON-State Drain Current 1.0 2 1.0 2 A Vos = 25V, Vas = 10V 10 0.3 0.4 Vas = 5V, Ip =0.1A 1 . . 1.0 1.5 11 1.6 Vos = 5V, ID=03A a I lt 12 VDSion? Drain-Source Saturation Voltage 08 13 v Vas. 10V. 1p 205A 13 2.2 3.0 2.2 4.0 Vas = 10V, In =1.0A 14 1 <, Static Drain-Source ON-State 22 30 40 Vy, TOV 1 IOA (Note 1) ' = = DSton Resistance . , 2.2 . 0 GS LIp= 1 Smaiti-Signai Drain-Source _ _ 15 tdsfon! ON-State Resistance 22 3.0 22 40 Ves = 10V, lo = 1.0A) ga 16 gis Forward transconductance 170 | 250 170 | 250 mo | Vos = 24V, In = 05a) 'KH2 7 D fF Gis input Capacitance 50 50 _ GS = 5 = 2) = 1, 18 x Cas Drain-Source Capacitance 40 40 oF Vas = 0, Vos = 25V, f= 1.0MHz }_| 19 A | 10 10 Ves = 0, Vos = 24V, f = 1.0MHz Ti fel ac : i M Crss Reverse Transfer Capacitance 35 35 Vos = 0, Vos = 0, f = 1.0MHz (Note 2) 21] & [elon Turn-ON Delay Time 2 5 2 5 22 tr Rise Time 2 5 2 5 ns 23 tdlott! Turn-OFF Delay Time 2 5 2 5 24 tt Fall Time . 2 5 2 5 Note 1. Pulse test 80usec pulse, 1% duty cycle. Note 2. Sample test. THERMAL RESPONSE z sa GN xa Fa Re 2a wg Be 1 es wo zw ro as | IL be eo ws ty { ws z= }#$-1. 9 | f DUTY CYCLE, D = t,/t, Oona Qt % ry 100 1000 t, TIME (msec) POWER DISSIPATION vs CASE DC SAFE OPERATING REGION BREAKDOWN OR AMBIENT TEMPERATURE Te = 26C VOLTAGE VARIATION WITH TEMPERATURE 3.0 10 2 g 1.2 E 7.6 - Cte nn 2 a = Ly tf 5 1 No41 3 59) NC INFINITE HEAT SINK a a = 20C/w & = a 4srp - 7 4 2 5 1 vo 8 Zz a 30 t- a) 8 09 g IN 5 3 ~ a 3 15}-- FREE AIR 4. 1 208C/w \ a 0.8 a 0.01 0 +40 +80 +120 +160 +200 1 10 100 -40-20 0 20 40 60 80 100 120140 T TEMPERATURE (C) Vos ORAIN-TO-SOURCE VOLTAGE (VOLTS) TEMPERATURE C : 2-4