BAT54M3T5G Schottky Barrier Diode This Schottky barrier diode is designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. The BAT54M3T5G device is a spin-off of our popular SOT-23 three-leaded device and is housed in the SOT-723 surface mount package. This device is ideal for low-power surface mount applications where board space is at a premium. Features * * * * * Extremely Fast Switching Speed Low Forward Voltage - 0.35 Volts (Typ) @ IF = 10 mAdc Reduces Board Space This is a Halide-Free Device This is a Pb-Free Device http://onsemi.com 30 V SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODE 3 CATHODE 1 ANODE MAXIMUM RATINGS (TJ = 125C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage VR 30 V Forward Power Dissipation @ TA = 25C Derate above 25C PF Forward Current (DC) 200 2.0 mW mW/C IF 200 Max mA Junction Temperature TJ -55 to +125 C Storage Temperature Range Tstg -55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM 3 2 1 SOT-723 CASE 631AA STYLE 2 AP M 1 AP = Specific Device Code M = Date Code ORDERING INFORMATION Device Package Shipping BAT54M3T5G SOT-723 (Pb-Free) 8000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2009 January, 2009 - Rev. 0 Publication Order Number: BAT54M3/D BAT54M3T5G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)R 30 - - V Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT - 7.6 10 pF Reverse Leakage (VR = 25 V) IR - 0.5 2.0 mA Forward Voltage (IF = 0.1 mA) VF - 0.22 0.24 V Forward Voltage (IF = 1.0 mA) VF - 0.29 0.32 V Forward Voltage (IF = 10 mA) VF - 0.35 0.40 V Forward Voltage (IF = 30 mA) VF - 0.41 0.5 V Forward Voltage (IF = 100 mA) VF - 0.52 0.8 V Reverse Recovery Time (IF = IR = 10 mA, IR(REC) = 1.0 mA, Figure 1) trr - - 5.0 ns Reverse Breakdown Voltage (IR = 10 mA) http://onsemi.com 2 BAT54M3T5G 820 +10 V 2k 0.1 F tr IF 100 H 0.1 F tp IF T trr 10% T DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE 90% IR VR INPUT SIGNAL iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit 100 1000 TA = 150C IR, REVERSE CURRENT (A) 85C 10 1 50C 1.0 25C 0.1 0.0 -40C -55C 0.2 0.3 0.4 0.1 0.5 VF, FORWARD VOLTAGE (VOLTS) 100 10 1.0 TA = 85C 0.1 0.01 0.001 0.6 TA = 125C TA = 25C 0 5 15 25 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 14 CT, TOATAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 1 25C 12 10 8 6 4 2 0 0 5 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Total Capacitance http://onsemi.com 3 25 30 30 BAT54M3T5G PACKAGE DIMENSIONS SOT-723 CASE 631AA-01 ISSUE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. -X- D b1 A -Y- 3 1 e 2 E HE L b 2X 0.08 (0.0032) X Y C STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE DIM A b b1 C D E e HE L MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0083 0.0106 0.010 0.012 0.015 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 SOLDERING FOOTPRINT* 0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157 0.40 0.0157 0.40 0.0157 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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