BAT54M3T5G - ON Semiconductor - Datasheet.Directory

January, 2009 − Rev. 0

Publication Order Number:

BAT54M3/D

BAT54M3T5G

Schottky Barrier Diode

This Schottky barrier diode is designed for high speed switching

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

The BAT54M3T5G device is a spin−off of our popular SOT−23

three−leaded device and is housed in the SOT−723 surface mount

package. This device is ideal for low−power surface mount

applications where board space is at a premium.

Features

•Extremely Fast Switching Speed

•Low Forward Voltage − 0.35 Volts (Typ) @ IF = 10 mAdc

•Reduces Board Space

•This is a Halide−Free Device

•This is a Pb−Free Device

MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)

Rating Symbol Value Unit

Reverse Voltage VR30 V

Forward Power Dissipation

@ TA = 25°C

Derate above 25°C

200

2.0

mW/°C

Forward Current (DC) IF200 Max mA

Junction Temperature TJ−55 to +125 °C

Storage Temperature Range Tstg −55 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

30 V

SILICON HOT−CARRIER

DETECTOR AND SWITCHING

DIODE

CATHODE

ANODE

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Device Package Shipping†

ORDERING INFORMATION

BAT54M3T5G SOT−723

(Pb−Free)

8000/Tape & Reel

SOT−723

CASE 631AA

STYLE 2

MARKING

DIAGRAM

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

AP = Specific Device Code

M = Date Code

AP M

BAT54M3T5G

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Reverse Breakdown Voltage (IR = 10 mA) V(BR)R 30 − − V

Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT−7.6 10 pF

Reverse Leakage (VR = 25 V) IR−0.5 2.0 mA

Forward Voltage (IF = 0.1 mA) VF−0.22 0.24 V

Forward Voltage (IF = 1.0 mA) VF−0.29 0.32 V

Forward Voltage (IF = 10 mA) VF−0.35 0.40 V

Forward Voltage (IF = 30 mA) VF−0.41 0.5 V

Forward Voltage (IF = 100 mA) VF−0.52 0.8 V

Reverse Recovery Time (IF = IR = 10 mA, IR(REC) = 1.0 mA, Figure 1) trr − − 5.0 ns

BAT54M3T5G

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, TOATAL CAPACITANCE (pF)

Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp » trr

+10 V 2 k

820 Ω

0.1 μF

DUT

100 μH

0.1 μF

50 Ω OUTPUT

PULSE

GENERATOR

50 Ω INPUT

SAMPLING

OSCILLOSCOPE

trtpT

10%

90%

trr T

iR(REC) = 1 mA

OUTPUT PULSE

(IF = IR = 10 mA; measured

at iR(REC) = 1 mA)

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

100

0.0 0.1

, FORWARD VOLTAGE (VOLTS)

0.2 0.3 0.4 0.5

1.0

0.1

85°C

VR, REVERSE VOLTAGE (VOLTS)

1.0

0.1

0.01

0.001

510

15 20 25

VR, REVERSE VOLTAGE (VOLTS)

051015 30

Figure 2. Forward Voltage Figure 3. Leakage Current

Figure 4. Total Capacitance

−40°C

25°C

TA = 150°C

TA = 125°C

TA = 85°C

TA = 25°C

0.6

−55°C

150°C

125°C

100

1000

2520

IR, REVERSE CURRENT (μA)

, FORWARD CURRENT (mA)

BAT54M3T5G

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PACKAGE DIMENSIONS

SOT−723

CASE 631AA−01

ISSUE C

DIM MIN NOM MAX

MILLIMETERS

A0.45 0.50 0.55

b0.15 0.21 0.27

b1 0.25 0.31 0.37

C0.07 0.12 0.17

D1.15 1.20 1.25

E0.75 0.80 0.85

e0.40 BSC

H1.15 1.20 1.25

L0.15 0.20 0.25

0.018 0.020 0.022

0.0059 0.0083 0.0106

0.010 0.012 0.015

0.0028 0.0047 0.0067

0.045 0.047 0.049

0.03 0.032 0.034

0.016 BSC

0.045 0.047 0.049

0.0059 0.0079 0.0098

MIN NOM MAX

INCHES

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD

FLASH, PROTRUSIONS OR GATE BURRS.

−Y−

−X−

X0.08 (0.0032) Y

1.0

0.039

ǒmm

inchesǓ

SCALE 20:1

0.40

0.0157

0.40

0.0157

0.40

0.0157

0.40

0.0157

0.40

0.0157

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

STYLE 2:

PIN 1. ANODE

2. N/C

3. CATHODE

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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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BAT54M3/D

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