3875081 G & SOLID STATE Ol de fj 3a? Darlington Power Transistors 5081 gou7azo o ff) 7-33-33, 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere Complementary P-N-P and N-P-N Monolithic Darlington Power Transistors 60-80-100 Volts, 150 Watts Gain of 7000 (Typ.) at 5 A (2N6050, 2N6051, 2N6052) Gain of 4000 (Typ.) at 5 A (2N6057, 2N6058, 2N6059) Features: = Operates from IC without predriver @ Monolithic construction @ High voltage ratings: = 60V Min. 2N6050, 2N6057 = 80 V Min. - 2N6051, 2NG058 = 100 V Min. 2N6052, 2N6059 Vecgolsus) The RCA-2N6050, 2N6051, and 2N6052 p-n-p types and the 2N6057, 2N6058, and 2N6059 n-p-n types are complemen- tary monolithic silicon Darlington transistors designed for general-purpose amplifier and low-speed switching applica- tions. The high gain of these devices makes it possible for them to be driven directly from integrated circuits. These devices are supplied in the JEDEC TO-204AA hermetic steel Fite Number 1185 TEAMINAL DESIGNATIONS c CFLANGE} 2 a S2Cs- 27THE JEDEC TO-2044A Applications: @ Power switching = Hammer drivers Series and shunt regulators @ Audio amplifiers package. MAXIMUM RATINGS, Absolute-Maximum Values: 2neoso 2N60s1 2N6052 2N6057 2N6058 2N6059 * Vopo: - 60 80 100 Vv * Vcgolsus) 60 80 100 Vv * VeBo 5 v * Ic. 12 A * lom 20 A * Ip. 0.2 A * Py Te S25. woe ees 150 Ww Tg > 25 c . Daerate linearly : 0.857 wc * Tstge Ty - 65 to 200 c * 7 At distances = 1/16 in. (1.58 mm) from case for 105 max. 235 Cc * In accordance with JEDEC registration data. For p-n-p devices, voltage and current values are negative. 232 __ 0772 F-11 | NN 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 92cs-2929 g2cs-29128 Fig. 1 Schematic diagram for 2N6050, 2NGO51, Fig. 2 Schematic diagram for 2NG057, 2N6058, and 2NG052. and 2N6059. ELECTRICAL CHARACTERISTICS, at Case Temperature (Tc) = 25C Unless Otherwise Specified TEST CONDITIONS LIMITS VOLTAGE | CURRENT] 2N6050 | 2Ne051 | 2Ne052 CHARACTERISTIC] Vdc Adc 2N6057 2N6058 2N6059 UNITS VcelVee [ic | lg |MIN.| MAX. | MIN. MAX, | MIN. MAX, 30 o}| - i] - ~|- - IcEO 40 oy - - Ty - - 50 of} ~ - -~|{- tT ona 60 |-1.5 - 05) _|- ~ ICEX 80 | -1.5 - - |- o5] - - 100 |-1.5 - - | - - | - 0.5 60 |-1.5 ~ 5| | - - T= 180C 80 |-1.5 - - f- 5] - - 100 }-1.5 - - | - - | - leBO 5 1) - 2] - 2] - 2| mA Vceolsus) 0.127 of 60 | 80 - | 100 - Vv h 3 128 100 - [100 | 100 - FE 3 68 750 |18,000 {750 {18,000 | 750 | 18,000 128} 9.19) 3] - 3} - 3 Vcelsat] 6? |o.024| 2| - 2| - 2| Vee 3 6a _ 28] - 28| - 2.8 Vpel(sat) 127 [0.12] - 4] - 4} - 4 Nfe _ _ = fe 1 kHe 3 5 300 300 300 Ihel _ _ _ fe 1 Mee 3 5 4 4 4 Cob Vop710V,!60, =0.1 MHz 2N6050-52 - 500 | 500 | - 500 F 2N6057-59 = 300 | - 300 | - 300 | ? S/o 30 5f| - 5 - 5] - A t= 1s, nonrep, Royc 1.17) - 117] 1.17 [C/W 4 Pulsed: Pulse duration = 300 us, duty factor = 1.8%. For p-n-p devices, voltage and current values are negative. * In accordance with JEDEC registration data. a7?3 F-12 233 7-33-33 J } .... SR. Power Transistors yy srt 3875081 GE SOLID STATE 01 DE} 3875081 oo1ve32 3 P 7-aR-35 Darlington Power Transistors 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 8 25 6 (CURVES MUST SE LINEARLY WITH IN TEMPERA ZI (MAX) 2b re 6 e FOR SINGLE NONREPETITIVE PULSE COLLECTOR CURRENT (Lc }A Vero! MAX) = 60V ( Vc EO(MAX-F BOVi2NGOSI)( VCEO(MAX.1#100 V(2N6052) (2 2 4 68 2 4 5 8 8 i to too 1000 COLLECTOR-TO-EMITTER VOLTAGE (Veg)V 317 FOR p-n-p DEVICES ,VOLTAGE AND CURRENT g2es~ Bite VALUES ARE NEGATIVE Fig. 3 Maximum operating areas for all types. oO 2 sO mm 100 125. 150 7s 200 CASE TEMPERATURE {1} C stus-neam CASE ic 9208-31715 Fig. 4 Current derating curve for all types. Fig. 5 Power derating curve for all types. COLLECTOR -TO- EMITTER VOLTAGE 3 2 4 68 2 4 686 2 4 68 01 =100 Ot ' 10 100 COLLECTOR CURRENT (L]~A COLLECTOR CURRENT(Ic)A 92CS-29133 aath-satat Fig. 6 Typical de beta characteristics for Fig. 7 Typical de beta characteristics for 2N6050, 2NGO51, and 2N6052. 2N6057, 2NGO58, and 2N6059. 234 O774 F-13 3875081 GE SOLID state 0) DE) 3875081 on17233 5 [ 1-33-32 Darlington Power Transistors 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 a TO-EMITTER VGLTAGE COLLECTOR CURRENT (Ic }: SA 4} CASE TEMPERATURE {(T.)= 25C ' wo too 000, COLLECTOR- TO-EMITTES SATURATION VOLTAGE FREQUENY (f} kHz Vogtsai|[ FOR p-n~p DEVICES, VOLTAGE AND CURRENT WLUES ARE NEGATIVE FOR o-n-o DEVICES, VOLTAGE AND CURRENT VALUES ARE HEGATIVE 9208-31712 92CS8-31713 Fig. 8 Typical saturation characteristics for all Fig. 9 Typical small-signal current gain for all types. types. CASE TEMPERATURE (To }x 25C Ig/Tg =250 Is te2 SWITCHING TIMEps +0.) <I ~10 7100 COLLECTOR CURRENT {Ig I-A COLLECTOR CURRENT {Ig )A 9205-23137 S2C8~ 29136 Fig. 10 Typical switching times for 2N6050, Fig. 11 Typical switching times for 2N6057, 2N6051, and 2NG052. 2N6058, and 2N059, Vec -30V Re DEVICE OSCILLOSCOPE v2 1 APPOX- | +12V y | Apbox-- | rev a teity< lOns DUTY CYCLES 1% FOR tg AND t,, Dj tS = DISCONNECTED AND V2=0 Rg & Rc VARIED TO OBTAIN DESIRED CURRENT LEVELS O; MUST BE FAST RECOVERY TYPE FOR n-p-n TEST CIRGUIT REVERSE DIODE AND VOLTAGE POLARITIES 92CS- 29138 Fig. 12 Switching times test circuit. 235