ON Semiconductor BC368 NPN, BC369 PNP Amplifier Transistors COLLECTOR 2 COLLECTOR 2 3 BASE 3 BASE NPN PNP Voltage and current are negative for PNP transistors 1 EMITTER 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 20 Vdc Collector-Emitter Voltage VCES 25 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current -- Continuous IC 1.0 Adc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watt mW/C TJ, Tstg -55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W Operating and Storage Junction Temperature Range 1 2 3 CASE 29-04, STYLE 14 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Semiconductor Components Industries, LLC, 2001 November, 2001 - Rev. 3 1 Publication Order Number: BC368/D BC368 NPN, BC369 PNP ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 10 mA, IB = 0) V(BR)CEO 20 -- -- Vdc Collector-Base Breakdown Voltage (IC = 100 A, IE = 0 ) V(BR)CBO 25 -- -- Vdc V(BR)EBO 5.0 -- -- Vdc -- -- -- -- 10 1.0 Adc mAdc -- -- 10 Adc 50 85 170 60 -- -- -- -- -- 375 375 -- fT 65 -- -- MHz Collector-Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA) VCE(sat) -- -- 0.5 V Base-Emitter On Voltage (IC = 1.0 A, VCE = 1.0 V) VBE(on) -- -- 1.0 V OFF CHARACTERISTICS Emitter-Base Breakdown Voltage (IE = 100 A, IC = 0) Collector Cutoff Current (VCB = 25 V, IE = 0) (VCB = 25 V, IE = 0, TJ = 150C) ICBO Emitter Cutoff Current (VEB = 5.0 V, IC = 0) IEBO ON CHARACTERISTICS DC Current Gain (VCE = 10 V, IC = 5.0 mA) (VCE = 1.0 V, IC = 0.5 A) hFE BC368, 369 BC368-25 (VCE = 1.0 V, IC = 1.0 A) Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 20 MHz) Figure 1. http://onsemi.com 2 -- BC368 NPN, BC369 PNP 1.0 VCE , COLLECTOR VOLTAGE (VOLTS) hFE , CURRENT GAIN 200 100 70 50 20 VCE = 1.0 V TJ = 25C 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 1000 TJ = 25C 0.8 0.6 1000 mA 0.2 IC = 10 mA 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IB, BASE CURRENT (mA) 250 mA 20 50 100 Figure 2. Collector Saturation Region VB , TEMPERATURE COEFFICIENT (mV/C) TJ = 25C VBE(sat) @ IC/IB = 10 0.8 V, VOLTAGE (VOLTS) 500 mA -0.8 1.0 VBE(on) @ VCE = 1.0 V 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 0 1.0 2.0 5.0 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA) -1.2 -1.6 -2.0 VB for VBE -2.4 -2.8 1.0 2.0 5.0 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA) Figure 4. Temperature Coefficient Figure 3. "On" Voltages 300 160 TJ = 25C 200 C, CAPACITANCE (pF) BANDWIDTH PRODUCT (MHz) 100 mA 0.4 Figure 1. DC Current Gain f T, CURRENT-GAIN 50 mA 100 70 VCE = 10 V TJ = 25C f = 20 MHz 50 30 10 20 50 120 80 Cibo 40 Cobo 100 200 500 0 Cobo Cibo 1000 IC, COLLECTOR CURRENT (mA) Figure 5. Current-Gain -- Bandwidth Product 5.0 1.0 10 15 20 2.0 3.0 4.0 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance http://onsemi.com 3 25 5.0 BC368 NPN, BC369 PNP PACKAGE DIMENSIONS CASE 029-04 (TO-226AA) ISSUE AD A B R SEATING PLANE P L F K X X D G H J R 1 2 3 N C SECTION X-X N TYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.175 0.205 4.44 5.21 B 0.290 0.310 7.37 7.87 C 0.125 0.165 3.18 4.19 D 0.018 0.021 0.457 0.533 F 0.016 0.019 0.407 0.482 G 0.045 0.055 1.15 1.39 H 0.095 0.105 2.42 2.66 J 0.018 0.024 0.46 0.61 K 0.500 --12.70 --L 0.250 --6.35 --N 0.080 0.105 2.04 2.66 P --0.100 --2.54 R 0.135 --3.43 --- ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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