Amplifier Transistors
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 20 Vdc
Collector–Emitter Voltage VCES 25 Vdc
Emitter–Base Voltage VEBO 5.0 Vdc
Collector Current — Continuous IC1.0 Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD625
5.0 mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD1.5
12 Watt
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RJA 200 °C/W
Thermal Resistance, Junction to Case RJC 83.3 °C/W
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 3 1Publication Order Number:
BC368/D
BC368
NPN,
BC369
PNP
CASE 29–04, STYLE 14
T O–92 (TO–226AA)
123
Voltage and current are negative
for PNP transistors
COLLECTOR
2
3
BASE
1
EMITTER
COLLECTOR
2
3
BASE
1
EMITTER
NPN PNP
BC368 NPN, BC369 PNP
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA, IB = 0) V(BR)CEO 20 — — Vdc
Collector–Base Breakdown Voltage
(IC = 100 µA, IE = 0 ) V(BR)CBO 25 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 100 µA, IC = 0) V(BR)EBO 5.0 — — Vdc
Collector Cutoff Current
(VCB = 25 V, IE = 0)
(VCB = 25 V, IE = 0, TJ = 150°C)
ICBO —
——
—10
1.0 µAdc
mAdc
Emitter Cutoff Current
(VEB = 5.0 V, IC = 0) IEBO — — 10 µAdc
ON CHARACTERISTICS
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
(VCE = 1.0 V, IC = 0.5 A) BC368, 369
BC368–25
(VCE = 1.0 V, IC = 1.0 A)
hFE 50
85
170
60
—
—
—
—
—
375
375
—
—
Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 20 MHz) fT65 — — MHz
Collector–Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA) VCE(sat) — — 0.5 V
Base–Emitter On Voltage (IC = 1.0 A, VCE = 1.0 V) VBE(on) — — 1.0 V
Figure 1.
BC368 NPN, BC369 PNP
http://onsemi.com
3
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
160
40
0
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Temperature Coefficient
-0.8
IC, COLLECTOR CURRENT (mA)
Figure 5. Current–Gain — Bandwidth Product
Cobo
Cibo
5.0
1.0
-2.4
-2.0
-1.2
VCE, COLLECTOR VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
VB , TEMPERATURE COEFFICIENT (mV/ C)°θC, CAPACITANCE (pF)
1.0
0.8
0.6
0.4
0.2
0
0.01 0.1 10 1001.0
1.0
0.8
0.6
0.4
0.2
0
1.0 10 1000100
10
2.0
TJ = 25°C
IC = 10 mA
TJ = 25°C
VBE(on) @ VCE = 1.0 V
VCE(sat) @ IC/IB = 10
θVB for VBE
Cibo
hFE, CURRENT GAIN
200
20
100010 50 100
100
20
VCE = 1.0 V
TJ = 25°C
70
50
200 500 0.02 0.05 0.2 0.5 2.0 5.0 20 50
50 mA
100 mA
250 mA
500 mA
1000 mA
2.0 5.0 20 50 200 500
-1.6
-2.8
1.0 10 10001002.0 5.0 20 50 200 500
120
80
15
3.0
20
4.0
25
5.0
TJ = 25°C
Cobo
300
70
30
IC, COLLECTOR CURRENT (mA)
Figure 6. Capacitance
10 20 50
200
100
100 200 500
fT, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
50
1000
VCE = 10 V
TJ = 25°C
f = 20 MHz
VBE(sat) @ IC/IB = 10
BC368 NPN, BC369 PNP
http://onsemi.com
4
PACKAGE DIMENSIONS
CASE 029–04
(TO–226AA)
ISSUE AD
C
R
N
N
1
J
SECTION X–X
D
23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS
UNCONTROLLED IN P AND BEYOND DIMENSION
K MINIMUM.
R
A
PL
F
B
K
G
H
XX
SEATING
PLANE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.44 5.21
B0.290 0.310 7.37 7.87
C0.125 0.165 3.18 4.19
D0.018 0.021 0.457 0.533
F0.016 0.019 0.407 0.482
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.018 0.024 0.46 0.61
K0.500 --- 12.70 ---
L0.250 --- 6.35 ---
N0.080 0.105 2.04 2.66
P--- 0.100 --- 2.54
R0.135 --- 3.43 ---
TYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
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BC368/D
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