Silicon Transistors Type Case 6 = | Maximum Ratings at 25C amb. Characteristics SPECIAL No. 3 8 FEATURES #2 ge Nee fy Vice(saT) io A to a MO a ~~ ft aA ~~ Ves | Vce | Ves le Prot le Min. | Max. lo Min. le Ip Max. Vv Vv Vv A Ww mA mA |Mc/s| mA mA Vv NPN Low Level 2N929 TO18 P 45 45 5 | 0-03 | 0:3 0-01 40 120 0-5 30 10 05 1:0 NF<4 dB from Low Noise 2N930 TO18 P 45 45 5 | 0:03 | 0-3 0-01 | 100 300 0-5 30 10 0-5 1:0 10 c/s to 10 Kce/s Amplifiers 2N2483 TO18 Pp 60 60 6 | 0-05 | 0:36 | 0-01 40 120 0-5 60 1:0 0-4 0-35 NF< 4dB at 1 Kc/s 2N2484 TO18 P 60 60 6 | 0-05 | 0-36 | 0-01 | 100 500 0-5 60 10 041 0-35 NF<3dB at 1 Kc/s 2$501 TO18 P 25 25 5 | 0:03 | 0:3 0-01 40 120 0-5 30 10 05 1-0 NF<5dB at 1 Ke/s 28502 TO18 P 25 25 5 | 0:03 | 0-3 0-01 | 100 300 0-5 30 10 0-5 1:0 NF<4dB at 1 Ke/s 28503 TO18 P 25 25 5 | 0-03 | 0:3 0-01 | 180 0-5 30 10 0-5 1-0 NF<4dB at 1 Ke/s 2N3707 Silect Pp 30 30 6 | 0-03 | 0:25 0-1 100 400 _ _ 10 0-5 1 NF 5dB max. 2N3708 Silect P 30 30 6] 0:03 | 0-25] 1-0 45 660 _ _ 10 05 1 2N3709 Silect P 30 30 6 | 0:03 | 025 | 1:0 45 165 _ - 10 0-5 1 2N3710 Silect P 30 30 6} 0:03 | 0:25 | 1:0 90 330 10 05 1 2N3711 Silect P 30 30 6 | 0-03 | 0-25 | 1-0 180 660 _ _ 10 05 1 BC182L Silect PE 60 50 5] 0-2 | 03 2 100 480 10 150 10 05 0-25 BC183L Silect PE 45 30 5 | 0-2 0:3 2 100 850 10 150 10 0:5 0:25 BC184L Silect PE 45 30 5 | 0-2 0-3 2 250 _ 10 150 10 0-5 0:25 NF 4dB max. PNP Low Level 2N2604 TO46 Pe | 60 | 45| 6| 0-03 | 04 | o-01| 40 | 120 |05 | 30 | 10 | 05 | 09 |] NF<4dB at 15-7 Ke/s Low Noise 2N2605 TO46 PE | 60/] 45 | -6| 0-03 | 0-4 | 0-01 | 100 300 |-05 30 | 10 | -05 | 0-9 NF<3dB at 15-7 Ke/s Amplifiers 2N4058 Silect PE | 30/} 30 | -6]| 0-03 | 0-25 | O-1 | 100 400 _ | -10 | -05 | 0-7 NF 5dB max. 2N4059 Silect PE | 30} -30] 6| 0-03 | 0-25 | 1:0 | 45 660 _ | -10 | -05 | ~07 2N4060 Silect PE ~30 | 30 6 | 0-03 | 0-25 | 10 45 165 _ _ 10 05 07 2N4061 Silect PE | 30{ 30| -6| 0-03 | 0-25 | 1:0} 90 330 | -10 | -05 } 0-7 2N4062 Silect PE | 30 | 30] -6| 0-03 | 0-25 | 1-0 | 180 660 _ | -10 | 0-5 | 0-7 PNP Fast 2N726 TO18 PE | 25 | 20| 5 | 0-05 | 0-30 | 10 15 45 | 10| 140 | 10 | 1-0 | 06 Switches 2N727 TO18 PE | 25] 20| -5]| 0-05 | 0:30 | 10 30 120 | 10] 140 | 10 | 1-:0 | 06 2N2411 TO18 PE | 25| 20] -5 | 0-10 | 0-30} 10 | 20 60 | 10 |] 140 | 10 | 1-0 | 0-2 | Total switching time 2N2412 TO18 PE | -25| 20| 5]| 0-10 | 030 | 10 | 40 | 120 | 10] 140 | -10 | -1-:0 | 02] <125nS at10mA 2N2894 To18 PE | -12| 12| 4]| 0-20 | 0-36 | 30 | 40 | 150 | 30] 400 | 30 | 3-0 | 0-20 2N3012 TO18 PE | 12 | -12] 4| 0-20 | 0-36 | 30 | 30 | 120 | 30] 400 | 30 | 3-0 | 0-20 TIS5O Silect | PE | 12| 12| -4]| 020 | 025 | 30 | 40 | 150 | 30] 400 | -30 | 3 0'2 | off 90nS max. (2N2894) NOTE 1: The following symbols have been used throughout the Product Summary: Under Construction: Under hre: Under fr: Under Dissipation: A Alloyed * hte o fhtb + dissipation at Tcase = 25C D Diffused A fhie E Epitaxial ~ typical G Grown M Mesa 8 P Planar