DSA 120 C 150 QB V RRM = 150 V I FAV = 2x 60 A V F = 0.80 V Schottky Diode Gen High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DSA 120 C 150 QB Backside: cathode Features / Advantages: Applications: Package: Very low Vf Extremely low switching losses low Irm values Improved thermal behaviour High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Rectifiers in switch mode power supplies (SMPS) Free wheeling diode in low voltage converters Housing: TO-3P Symbol Definition Conditions VRRM max. repetitive reverse voltage IR reverse current rIndustry standard outline r compatible with TO-247 rEpoxy meets UL 94V-0 rRoHS compliant Ratings VF forward voltage min. typ. 150 V VR = 150 V TVJ = 25 C TVJ = 25 C 1.8 mA VR = 150 V TVJ = 125 C 5 mA IF = TVJ = 25 C 0.93 V 1.13 V 0.80 V 1.03 V TC = 150C 60 A TVJ = 175C 0.51 V 60 A I F = 120 A IF = TVJ = 125 C 60 A I F = 120 A I FAV average forward current VF0 threshold voltage rectangular d = 0.5 for power loss calculation only 3.9 m 0.40 K/W 175 C TC = 25 C 375 W TVJ = 45C 600 A rF slope resistance R thJC thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current t = 10 ms (50 Hz), sine CJ junction capacitance VR = 24 V; f = 1 MHz TVJ = 25 C IXYS reserves the right to change limits, conditions and dimensions. Unit max. -55 Data according to IEC 60747and per diode unless otherwise specified (c) 2010 IXYS all rights reserved http://store.iiic.cc/ 481 pF 20100219a DSA 120 C 150 QB Ratings Symbol Definition min. Conditions I RMS RMS current R thCH thermal resistance case to heatsink Tstg storage temperature per pin max. Unit 70 0.25 -55 Weight A K/W 150 C 5 MD mounting torque FC mounting force with clip 1) typ. 1) g 0.8 1.2 Nm 20 120 N I RMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Product Marking Part number Logo D S A 120 C 150 QB IXYS Part No. Date Code Order Code abcd Ordering Standard Part Name DSA 120 C 150 QB IXYS reserves the right to change limits, conditions and dimensions. Marking on Product DSA120C150QB Delivering Mode Tube = = = = = = = Diode Schottky Diode low VF Current Rating [A] Common Cathode Reverse Voltage [V] TO-3P (3) Base Qty Code Key 30 501788 Data according to IEC 60747and per diode unless otherwise specified (c) 2010 IXYS all rights reserved http://store.iiic.cc/ 20100219a DSA 120 C 150 QB Outlines TO-3P IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per diode unless otherwise specified (c) 2010 IXYS all rights reserved http://store.iiic.cc/ 20100219a DSA 120 C 150 QB 120 10000 100 100 10 TVJ=175C 150C 80 IF IR TVJ = 150C 125C 25C 60 [A] 40 CT 1 [pF] 125C 1000 [mA] 0.1 100C 75C 0.01 20 50C TVJ = 25C 25C 100 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 50 Fig. 1 Maximum forward voltage drop characteristics 80 100 150 0 50 100 150 VR [V] VR [V] Fig. 2 Typ. reverse current IR vs. reverse voltage VR Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR VF [V] 60 50 60 40 IF(AV) P(AV) 40 d= DC 0.5 0.33 0.25 0.17 0.08 30 [A] [W] 20 20 10 0 0 0 50 100 150 200 0 TC [C] 10 20 30 40 50 60 70 IF(AV) [A] Fig. 4 Average forward current IF(AV) vs. case temperature TC Fig. 5 Forward power loss characteristics 0.5 Rthi ti 0.022 0.0002 0.4 0.082 0.0032 0.104 0.026 0.3 0.165 0.208 ZthJC 0.027 0.2 0.79 [K/W] 0.1 0.0 0.001 Note: All curves are per diode 0.01 0.1 1 10 t [s] Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per diode unless otherwise specified (c) 2010 IXYS all rights reserved http://store.iiic.cc/ 20100219a