a on i IRFF330 IRFF333 MAXIMUM RATINGS CASE 79-05, STYLE 6 Rating Symbol | IRFF330 | IRFF333 | Unit TO-39 (TO-205AF) Drain-Source Voltage Vpss 400 350 Vde Drain-Gate Voltage (Rgg = 1.0 mQ) Vocr | 400 350 Vdc 3 Drain Gate-Source Voltage Ves +20 Vde He Drain Current Adc Continuous Ip 3.5 3.0 Pulsed Jom 14 12 3 2 Total Power Dissipation @ Te = 25C Pp 25 Watts 2i Gate Derate above 25C 0.2 wrc 1 Source Operating and Storage Temperature Range | Ty, Tstg 55 to 150 C THERMAL CHARACTERISTICS TMOS FET Thermal Resistance Junction to Case Raic 5.0 C TRANSISTORS Maximum Lead Temperature Tt 300 c N-CHANNEL ENHANCEMENT 1.6 mm from Case for 10s ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted.} Characteristic | Symbot | Min Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage IRFF330 ViBR)DSS 400 _ Vde (Vgs = 0, Ip = 250 2A) IRFF333 350 - Zero Gate Voltage Drain Currant (Vpg = Rated Vpss, Vgs = 9) Ipss - 250 pAdc Gate-Body Leakage Current, Forward (Vq@g = 20 Vdc, Vps = 0) IGssF _ 100 nAdc Gate-Body Leakage Current, Reverse (Vgg = 20 Vdc, Vps = 0) lGssR _ 100 nAdc ON CHARACTERISTICS* . Gate Threshold Voltage (Vps = Vgs. Ip = 250 nA) VGsith) 2.0 4.0 Vde Static Drain-Source On-Resistance IRFF330 DS(on) _ 1.0 Ohm (VGg = 10 Vde, Ip = 2.0 Adc) IRFF333 _ 15 On-State Drain Current IRFF330 IDfon) 3.5 _ A (Ves = 10 V, Vos = 5.0 V) IRFF333 3.0 _ Forward Transconductance {Ip = 2.0 A, Vpg = 5.0 V} Ofs 2.0 _ mhos DYNAMIC CHARACTERISTICS Input Capacitance Ciss _ 900 pF Output Capacitance Vos po fomes =o, Coss - 300 Reverse Transfer Capacitance Crgs- _ 80 SWITCHING CHARACTERISTICS* Turn-On Delay Time tdion) _ 30 ns Rise Time (Vpp = 175 V, Ip = 2.0 A, tr = 35 Turn-Off Delay Time Rgen = 50 ohms} taloft) - 65 Fall Time tt _ 35 SOURCE-DRAIN DIODE CHARACTERISTICS* Forward On-Voltage (RFF330 Vsp -= 1.6 Vde IRFF333 Vsp - 15 Vde Forward Turn-On Time (ig = Rated Ipjon}: ton - Negligible ns Reverse Recovery Time Ves = 9) trr = 600 (Typ) ns *Pulse Test: Pulse Width < 300 ys, Duty Cycle < 2.0%. MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 4-103