ON Semiconductor NPN TIP41A Complementary Silicon Plastic Power Transistors TIP41B * TIP41C * . . . designed for use in general purpose amplifier and switching applications. PNP * Collector-Emitter Saturation Voltage -- * * * TIP42A VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc Collector-Emitter Sustaining Voltage -- VCEO(sus) = 60 Vdc (Min) -- TIP41A, TIP42A = 80 Vdc (Min) -- TIP41B, TIP42B = 100 Vdc (Min) -- TIP41C, TIP42C High Current Gain -- Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc Compact TO-220 AB Package TIP42B * TIP42C * *ON Semiconductor Preferred Device IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIII III IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIII III IIII III IIII IIIIIIIIIII III IIII III IIII III IIIIIIIIIII III IIII III IIII III IIIIIIIIIII III IIIIIIIII III IIII III IIII IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIIIIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III *MAXIMUM RATINGS Rating Symbol TIP41A TIP42A TIP41B TIP42B TIP41C TIP42C Unit Collector-Emitter Voltage VCEO 60 80 100 Vdc Collector-Base Voltage VCB 60 80 100 Vdc Emitter-Base Voltage VEB 5.0 Vdc IC 6 10 Adc 2.0 Adc Collector Current -- Continuous Peak Base Current IB Total Power Dissipation @ TC = 25C Derate above 25C PD Total Power Dissipation @ TA = 25C Derate above 25C PD 65 0.52 Watts W/C 2.0 0.016 Watts W/C E 62.5 mJ TJ, Tstg -65 to +150 C Unclamped Inductive Load Energy (1) Operating and Storage Junction Temperature Range 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80-100 VOLTS 65 WATTS 4 1 2 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR 3 CASE 221A-09 TO-220AB THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 62.5 C/W Thermal Resistance, Junction to Case RJC 1.92 C/W (1) IC = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 . Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2002 April, 2002 - Rev. 4 1 Publication Order Number: TIP41A/D TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0) TIP41A, TIP42A TIP41B, TIP42B TIP41C, TIP42C VCEO(sus) 60 80 100 -- -- -- Vdc Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) TIP41A, TIP42A TIP41B, TIP41C TIP42B, TIP42C ICEO -- -- -- 0.7 0.7 0.7 mAdc Collector Cutoff Current (VCE = 60 Vdc, VEB = 0) (VCE = 80 Vdc, VEB = 0) (VCE = 100 Vdc, VEB = 0) TIP41A, TIP42A TIP41B, TIP42B TIP41C, TIP42C -- -- -- 400 400 400 IEBO -- 1.0 mAdc hFE 30 15 -- 75 -- VCE(sat) VBE(on) -- 1.5 Vdc -- 2.0 Vdc fT hfe 3.0 -- MHz 20 -- -- Adc ICES Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) ON CHARACTERISTICS (1) DC Current Gain (IC = 0.3 Adc, VCE = 4.0 Vdc) DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc) Collector-Emitter Saturation Voltage (IC = 6.0 Adc, IB = 600 mAdc) Base-Emitter On Voltage (IC = 6.0 Adc, VCE = 4.0 Vdc) DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) Small-Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. http://onsemi.com 2 PD, POWER DISSIPATION (WATTS) TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C TA 4.0 TC 80 3.0 60 2.0 40 1.0 20 0 0 TC TA 0 40 20 60 100 80 T, TEMPERATURE (C) 120 140 160 Figure 1. Power Derating VCC +30 V tr, tf 10 ns DUTY CYCLE = 1.0% t, TIME (s) -9.0 V 0.7 0.5 SCOPE RB 0 TJ = 25C VCC = 30 V IC/IB = 10 1.0 RC 25 s +11 V 2.0 D1 -4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA 0.3 0.2 tr 0.1 0.07 0.05 0.03 0.02 0.06 td @ VBE(off) 5.0 V 0.1 1.0 0.2 2.0 0.4 0.6 IC, COLLECTOR CURRENT (AMP) Figure 3. Turn-On Time Figure 2. Switching Time Test Circuit http://onsemi.com 3 4.0 6.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.02 0.03 0.02 0.01 0.01 0.01 SINGLE PULSE 0.02 0.05 1.0 P(pk) ZJC(t) = r(t) RJC RJC = 1.92C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZJC(t) 0.05 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 500 1.0 k Figure 4. Thermal Response 10 IC, COLLECTOR CURRENT (AMP) 5.0 3.0 2.0 1.0 0.5 0.3 0.2 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 0.5ms TJ = 150C 1.0ms SECONDARY BREAKDOWN LTD BONDING WIRE LTD THERMAL LIMITATION @ TC = 25C (SINGLE PULSE) CURVES APPLY BELOW RATED VCEO 0.1 5.0 5.0ms TIP41A, TIP42A TIP41B, TIP42B TIP41C, TIP42C 40 10 20 60 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 80 100 Figure 5. Active-Region Safe Operating Area 5.0 300 ts 1.0 TJ = 25C VCC = 30 V IC/IB = 10 IB1 = IB2 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.06 TJ = 25C 200 C, CAPACITANCE (pF) t, TIME (s) 3.0 2.0 tf Cib 100 70 Cob 50 0.1 0.2 0.4 0.6 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 4.0 30 0.5 6.0 Figure 6. Turn-Off Time 1.0 2.0 3.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance http://onsemi.com 4 30 50 TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C 300 200 25C 30 20 10 7.0 5.0 0.06 VCE = 2.0 V TJ = 150C 100 70 50 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) hFE, DC CURRENT GAIN 500 -55C 0.1 4.0 0.2 0.3 0.4 0.6 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 6.0 2.0 TJ = 25C 1.6 1.2 IC = 1.0 A 0.4 0 10 V, TEMPERATURE COEFFICIENTS (mV/C) TJ = 25C V, VOLTAGE (VOLTS) 1.6 1.2 VBE(sat) @ IC/IB = 10 VBE @ VCE = 4.0 V VCE(sat) @ IC/IB = 10 0.1 0.2 0.3 0.4 0.6 1.0 2.0 3.0 4.0 6.0 IC, COLLECTOR CURRENT (A) 100C IC = ICES 10-1 REVERSE -0.1 +1.0 +0.5 +25C to +150C *VC FOR VCE(sat) 0 -55C to +25C -0.5 +25C to +150C -1.0 -1.5 VB FOR VBE -55C to +25C -2.0 -2.5 0.06 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 FORWARD 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 +0.7 6.0 10M VCE = 30 V IC = 10 x ICES IC ICES 100k 25C 10-3 -0.3 -0.2 *APPLIES FOR IC/IB hFE/4 +1.5 1.0M TJ = 150C 1000 +2.5 +2.0 Figure 11. Temperature Coefficients 100 10-2 500 Figure 10. "On" Voltages VCE = 30 V 101 50 100 200 300 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (AMP) 103 102 30 IC, COLLECTOR CURRENT (AMP) R BE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) 0 0.06 20 Figure 9. Collector Saturation Region 2.0 0.4 5.0 A 0.8 Figure 8. DC Current Gain 0.8 2.5 A 10k IC = 2 x ICES 1.0k 0.1k (TYPICAL ICES VALUES OBTAINED FROM FIGURE 12) 20 40 60 80 100 120 140 160 VBE, BASE-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (C) Figure 12. Collector Cut-Off Region Figure 13. Effects of Base-Emitter Resistance http://onsemi.com 5 TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE AA -T- B SEATING PLANE C F T S 4 A Q 1 2 3 U H K Z L R V J G D N STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR http://onsemi.com 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C Notes http://onsemi.com 7 TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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