UNISONIC TECHNOLOGIES CO., LTD
2SD882S NPN SILICON TRANSISTOR
www.unisonic.com.tw 1 of 4
Copyright © 2009 Unisonic Technologies Co., Ltd QW-R208-007,E
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
FEATURES
* High current output up to 3A
* Low saturation voltage
* Complement to 2SB772S
APPLICATIONS
* Audio power amplifier
* DC-DC convertor
* Voltage regulator
Lead-free: 2SD882SL
Halogen-free:2SD882SG
ORDERING INFORMATION
Order Number Pin Assignment
Normal Lead Free Halogen Free Package 1 2 3 Packing
2SD882S-x-AA3-R 2SD882SL-x-AA3-R 2SD882SG-x-AA3-R SOT-223 B C E Tape Reel
2SD882S-x-AB3-R 2SD882SL-x-AB3-R 2SD882SG-x-AB3-R SOT-89 B C E Tape Reel
2SD882S-x-T92-B 2SD882SL-x-T92-B 2SD882SG-x-T92-B TO-92 E C B Tape Box
2SD882S-x-T92-K 2SD882SL-x-T92-K 2SD882SG-x-T92-K TO-92 E C B Bulk
2SD882S NPN SILICON TRANSISTOR
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ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified )
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 30 V
Emitter-Base Voltage VEBO 5 V
DC IC 3 A
Collector Current Pulse ICP 7 A
Base Current IB 0.6 A
SOT-223 1 W
SOT-89 0.5 W
Power Dissipation
TO-92
PD
0.75 W
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55 ~ +150 °C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO I
C=100μA, IE=0 40 V
Collector-Emitter Breakdown Voltage BVCEO I
C=1mA, IB=0 30 V
Emitter-Base Breakdown Voltage BVEBO I
E=100μA, IC=0 5 V
Collector Cut-off Current ICBO V
CB=30V, IE=0 1000 nA
Emitter Cut-off Current IEBO V
EB=3V, IC=0 1000 nA
hFE1 V
CE=2V, IC=20mA 30 200
DC Current Gain (Note 1) hFE2 V
CE=2V, IC=1A 100 150 400
Collector-Emitter Saturation Voltage VCE(SAT) I
C=2A, IB=0.2A 0.3 0.5 V
Base-Emitter Saturation Voltage VBE(SAT) I
C=2A, IB=0.2A 1.0 2.0 V
Current Gain Bandwidth Product fT V
CE=5V, IC=0.1A 80 MHz
Output Capacitance Cob VCB=10V, IE=0, f=1MHz 45 pF
Note 1: Pulse test: PW<300μs, Duty Cycle<2%
CLASSIFICATION OF hFE2
RANK Q P E
RANGE 100-200 160-320 200-400
2SD882S NPN SILICON TRANSISTOR
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TYPICAL CHARACTERISTICS
Static Characteristics
Collector-Emitter Voltage (V)
Collector Current, Ic (A)
0 4 8121620
0
0.4
0.8
1.2
1.6
Case Temperature, TC(°C)
Derating Curve of Safe Operating Areas
Derating, IC(%)
200150100500-50
0
50
100
150
S/b limited
Dissipation limited
IB=9mA
IB=8mA
IB=7mA
IB=6mA
IB=5mA
IB=4mA
IB=3mA
IB=2mA
IB=1mA
Current Gain-Bandwidth Product
Current Gain-
Bandwidth Product, FT(MHz)
Collector-Emitter Voltage
Collector Current, IC(A)
Safe Operating Area
IC(max), Pulse
10mS
1mS
0.1mS
Collector Current, Ic (A)
103
102
101
100
10-2 10-1 100101
101
100
10-1
10-2
100101102
IC(max), DC
VCE=5V
IB=8mA
DC Current Gain
Collector Current, IC(mA) Collector Current, IC(mA)
Saturation Voltage
DC Current Gain, hFE
Saturation Voltage (mV)
103
102
101
100
100101103104
VCE=2V
104
103
102
100
101102104
101
100103
VBE(SAT)
VCE(SAT)
2SD882S NPN SILICON TRANSISTOR
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TYPICAL CHARACTERISTICS(Cont.)
Collector Output Capacitance
Collector-Base Voltage (V)
Output Capacitance (pF)
100
103
IE=0
f=1MHz
102
101
100
10-1 10-2 10-3
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
