CZTA27
SURFACE MOUNT SILICON
HIGH VOLTAGE NPN
DARLINGTON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZTA27 is a
silicon NPN Darlington transistor manufactured by the
epitaxial planar process, epoxy molded in a surface
mount package, designed for applications requiring
extremely high gain and high voltage.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Emitter Voltage VCES 60 V
Emitter-Base Voltage VEBO 10 V
Continuous Collector Current IC 500 mA
Power Dissipation PD 2.0 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 62.5 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=50V 100 nA
ICES V
CE=50V 500 nA
IEBO V
EB=10V 100 nA
BVCBO I
C=100µA 60 V
BVCES I
C=100µA 60 V
VCE(SAT) I
C=100mA, IB=0.1mA 1.5 V
VBE(ON) V
CE=5.0V, IC=100mA 2.0 V
hFE V
CE=5.0V, IC=10mA 10,000
hFE V
CE=5.0V, IC=100mA 10,000
fT V
CE=5.0V, IC=10mA, f=100MHz 125 MHz
SOT-223 CASE
R4 (22-August 2017)
www.centralsemi.com
CZTA27
SURFACE MOUNT SILICON
HIGH VOLTAGE NPN
DARLINGTON TRANSISTOR
LEAD CODE:
1) Base
2) Collector
3) Emitter
4) Collector
MARKING:
FULL PART NUMBER
SOT-223 CASE - MECHANICAL OUTLINE
www.centralsemi.com
R4 (22-August 2017)
For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER,
which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms
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(001)
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