Rev. V13
Packaged PIN Diodes
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Features
High Power
Fast Speed
Voltage Ratings to 1500 Volts
Wide Selection of Carrier Lifetimes
Wide Selection of Capacitances
Assortment of Packages Styles
Available Screened for Military Applications
RoHS* Compliant
Description and Applications
MACOM’s broad line of packaged PIN diodes
encompass a comprehensive range of electrical
characteristics and package outlines. This diverse
union of semiconductor technology and chip
packaging gives considerable flexibility to the circuit
designer. The fast switching series of packaged PIN
diodes utilize a thin I-region, silicon oxide or glass
passivated chip which provides for low leakage
current and low insertion loss. With the use of in
process control monitors to regulate wafer
fabrication parameters, these devices will achieve
consistent performance in control circuit
applications. The high voltage product line of
packaged PIN diodes employs MACOM
CERMACHIP® passivation process which provides
for a hard glass encapsulation that hermetically
seals and protects the active area of the chip.
These packaged CERMACHIP® PIN diodes are
ideally suited for use in high power applications
where high level RF voltages are present. The diode
chips are bonded into sealed ceramic packages that
are designed for the most stringent electrical and
environmental conditions. An extensive choice of
package styles are available which may be used in a
wide variety of RF microwave circuits. The packaged
PIN diodes series are designed to have a high
inherent reliability and may be ordered screened to
meet many MIL-STD requirements.
Cathode Heatsink Packages
30,31,36,43,120,
150,255 258,296,1072,1079
PDISS = T (max oper.) -25°C
Thermal Resistance
Leaded Packages
+25°C PDISS = 250 mW
Surface Mount Package
+25°C
PDISS = 300 mW
Maximum Power Dissipation
Co-Axial Packages
Leaded/Surface Mount Packages
31 36
1056
120,255
276
186
30, 296
1088
1072,1079
Thru Hole
144
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.