MOTOROLA Order this document by MRF150/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-E ffect Transistor N-Channel Enhancement-Mode MRF150 Designed primarily for linear large-signal output stages up to 150 MHz frequency range. * Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 17 dB (Typ) Efficiency = 45% (Typ) 150 W, to 150 MHz N-CHANNEL MOS LINEAR RF POWER FET * Superior High Order IMD * IMD(d3) (150 W PEP) -- - 32 dB (Typ) * IMD(d11) (150 W PEP) -- - 60 dB (Typ) * 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR * S-Parameters Available for Download into Frequency Domain Simulators. See http://motorola.com/sps/rf/designtds/ D G CASE 211-11, STYLE 2 S MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating VDSS 125 Vdc Drain-Gate Voltage VDGO 125 Vdc VGS 40 Vdc Drain Current -- Continuous ID 16 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 300 1.71 Watts W/C Storage Temperature Range Tstg - 65 to +150 C Operating Junction Temperature TJ 200 C Symbol Max Unit RJC 0.6 C/W Gate-Source Voltage THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 9 RF DEVICE DATA MOTOROLA Motorola, Inc. 1998 MRF150 1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit V(BR)DSS 125 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) IDSS -- -- 5.0 mAdc Gate-Body Leakage Current (VGS = 20 V, VDS = 0) IGSS -- -- 1.0 Adc Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) VGS(th) 1.0 3.0 5.0 Vdc Drain-Source On-Voltage (VGS = 10 V, ID = 10 A) VDS(on) 1.0 3.0 5.0 Vdc gfs 4.0 7.0 -- mhos Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Ciss -- 400 -- pF Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Coss -- 240 -- pF Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Crss -- 40 -- pF Gps -- -- 17 8.0 -- -- dB -- 45 -- % IMD(d3) IMD(d11) -- -- - 32 - 60 -- -- OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 100 mA) ON CHARACTERISTICS Forward Transconductance (VDS = 10 V, ID = 5.0 A) DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (SSB) Common Source Amplifier Power Gain (VDD = 50 V, Pout = 150 W (PEP), IDQ = 250 mA) f = 30 MHz f = 150 MHz Drain Efficiency (VDD = 50 V, Pout = 150 W (PEP), f = 30; 30.001 MHz, ID (Max) = 3.75 A) Intermodulation Distortion (1) (VDD = 50 V, Pout = 150 W (PEP), f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 250 mA) dB Load Mismatch (VDD = 50 V, Pout = 150 W (PEP), f = 30; 30.001 MHz, IDQ = 250 mA, VSWR 30:1 at all Phase Angles) No Degradation in Output Power CLASS A PERFORMANCE Intermodulation Distortion (1) and Power Gain (VDD = 50 V, Pout = 50 W (PEP), f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 3.0 A) GPS IMD(d3) IMD(d9 - 13) -- -- -- 20 - 50 - 75 -- -- -- dB NOTE: 1. To MIL-STD-1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone. L2 L1 BIAS + 0 - 12 V - + C5 C6 C8 C7 C9 + C10 - - 50 V R1 DUT T2 RF INPUT T1 R3 C2 C4 C1 R2 C1 -- 470 pF Dipped Mica C2, C5, C6, C7, C8, C9 -- 0.1 F Ceramic Chip or Monolythic with Short Leads C3 -- 200 pF Unencapsulated Mica or Dipped Mica with Short Leads C4 -- 15 pF Unencapsulated Mica or Dipped Mica with Short Leads RF OUTPUT C3 C10 -- 10 F/100 V Electrolytic L1 -- VK200/4B Ferrite Choke or Equivalent, 3.0 H L2 -- Ferrite Bead(s), 2.0 H R1, R2 -- 51 /1.0 W Carbon R3 -- 3.3 /1.0 W Carbon (or 2.0 x 6.8 /1/2 W in Parallel T1 -- 9:1 Broadband Transformer T2 -- 1:9 Broadband Transformer Figure 1. 30 MHz Test Circuit (Class AB) MRF150 2 MOTOROLA RF DEVICE DATA 15 VDD = 50 V IDQ = 250 mA Pout = 150 W (PEP) 10 5 0 2 5 10 20 50 100 VDD = 50 V 100 40 V 50 00 30 VDD = 50 V 40 V 0 1 IDQ = 250 mA 2 3 4 5 6 Pin, INPUT POWER (WATTS) Figure 2. Power Gain versus Frequency Figure 3. Output Power versus Input Power 1000 - 30 - 35 150 MHz f T, UNITY GAIN FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dB) 20 100 f, FREQUENCY (MHz) d3 - 40 - 45 d5 - 50 VDD = 50 V, IDQ = 250 mA, TONE SEPARATION = 1 kHz - 30 - 35 30 MHz - 40 d3 - 45 - 50 IDQ = 250 mA 10 250 200 150 50 0 200 150 MHz POWER GAIN (dB) 20 250 200 150 30 MHz Pout , OUTPUT POWER (WATTS) 25 0 d5 20 40 60 80 100 120 140 160 VDS = 30 V 800 15 V 600 400 200 0 0 5 10 15 20 ID, DRAIN CURRENT (AMPS) Pout, OUTPUT POWER (WATTS PEP) Figure 4. IMD versus Pout Figure 5. Common Source Unity Gain Frequency versus Drain Current IDS , DRAIN CURRENT (AMPS) 10 8 6 4 2 0 VDS = 10 V gfs = 5 mhos 0 2 4 6 8 10 VGS, GATE-SOURCE VOLTAGE (VOLTS) Figure 6. Gate Voltage versus Drain Current MOTOROLA RF DEVICE DATA MRF150 3 150 90 f = 175 MHz 136 30 Zin 15 90 30 f = 175 MHz 15 7.5 7.5 4.0 ZOL* Zo = 10 2.0 VDD = 50 V IDQ = 250 mA Pout = 150 W PEP 4.0 2.0 ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency. NOTE: Gate Shunted by 25 Ohms. Figure 7. Series Equivalent Impedance RFC2 + 50 Vdc C10 L4 R1 BIAS 0 - 12 V + C4 C5 DUT L3 L1 RF INPUT C3 RF OUTPUT L2 C6 C2 C11 C9 R3 C1 + C7 C8 R2 C1, C2, C8 -- Arco 463 or equivalent C3 -- 25 pF, Unelco C4 -- 0.1 F, Ceramic C5 -- 1.0 F, 15 WV Tantalum C6 -- 25 pF, Unelco J101 C7 -- 25 pF, Unelco J101 C9 -- Arco 262 or equivalent C10 -- 0.05 F, Ceramic C11 -- 15 F, 60 WV Electrolytic L1 -- 3/4, 18 AWG into Hairpin L2 -- Printed Line, 0.200 x 0.500 L3 -- 1, #16 AWG into Hairpin L4 -- 2 Turns #16 AWG, 5/16 ID RFC1 -- 5.6 H, Choke RFC2 -- VK200-4B R1 -- 150 , 1.0 W Carbon R2 -- 10 k, 1/2 W Carbon R3 -- 120 , 1/2 W Carbon Figure 8. 150 MHz Test Circuit (Class AB) MRF150 4 MOTOROLA RF DEVICE DATA Table 1. Common Source S-Parameters (VDS = 50 V, ID = 2 A) S11 S21 S12 S22 AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA f MHz |S11| 30 0.936 40 0.936 50 |S21| |S12| |S22| -179 4.13 -179 3.16 0.936 -180 60 0.937 70 84 0.011 22 0.844 -176 79 0.012 23 0.842 -180 2.52 75 0.013 29 0.855 -179 180 2.13 72 0.014 36 0.854 179 0.939 179 1.81 68 0.013 42 0.870 179 80 0.940 179 1.53 67 0.013 45 0.868 -179 90 0.941 179 1.34 65 0.014 46 0.855 -178 100 0.942 179 1.21 60 0.016 46 0.874 180 110 0.942 179 1.11 58 0.018 52 0.875 178 120 0.945 178 0.99 56 0.019 61 0.893 180 130 0.946 178 0.88 53 0.019 67 0.902 -179 140 0.947 178 0.83 52 0.019 68 0.919 -179 150 0.949 177 0.74 49 0.020 63 0.910 -179 160 0.949 177 0.71 46 0.024 62 0.889 -180 170 0.952 177 0.65 44 0.026 68 0.878 179 180 0.953 177 0.59 42 0.029 72 0.921 179 190 0.954 176 0.57 41 0.029 75 0.949 178 200 0.956 176 0.52 39 0.028 74 0.929 178 210 0.955 176 0.51 38 0.030 71 0.934 179 220 0.957 175 0.49 35 0.034 70 0.918 177 230 0.960 175 0.43 32 0.039 71 0.977 175 240 0.959 175 0.42 32 0.040 74 0.941 175 250 0.961 175 0.39 32 0.040 77 0.944 176 260 0.961 175 0.36 31 0.040 76 0.948 177 270 0.960 174 0.35 29 0.043 74 0.947 175 280 0.963 174 0.34 29 0.046 73 0.929 174 290 0.963 174 0.32 25 0.048 74 0.918 172 300 0.965 173 0.32 28 0.051 78 0.925 174 310 0.966 173 0.29 27 0.052 79 0.953 174 320 0.963 173 0.28 26 0.054 76 0.954 172 330 0.965 172 0.26 22 0.057 74 0.914 171 340 0.966 172 0.26 27 0.058 72 0.925 171 350 0.965 172 0.26 25 0.062 75 0.934 171 360 0.968 171 0.25 25 0.065 74 0.979 171 370 0.967 171 0.23 24 0.064 73 0.993 168 380 0.967 171 0.24 22 0.068 74 0.952 172 390 0.969 170 0.22 26 0.069 74 0.942 170 400 0.968 170 0.21 23 0.072 76 0.936 172 410 0.968 170 0.21 24 0.076 73 0.984 168 420 0.970 169 0.20 25 0.078 71 0.977 167 430 0.969 169 0.18 25 0.082 72 0.959 168 440 0.970 169 0.19 25 0.082 73 0.953 169 MOTOROLA RF DEVICE DATA MRF150 5 Table 1. Common Source S-Parameters (VDS = 50 V, ID = 2 A) continued S11 S21 S12 S22 AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA f MHz |S11| |S21| |S12| |S22| 450 0.971 168 0.19 24 0.085 75 0.960 168 460 0.972 168 0.17 26 0.086 70 0.960 164 470 0.972 168 0.17 23 0.087 70 0.952 165 480 0.969 167 0.18 26 0.093 70 0.977 166 490 0.969 167 0.18 25 0.099 71 0.966 166 500 0.969 166 0.17 26 0.101 71 0.972 164 MRF150 6 MOTOROLA RF DEVICE DATA RF POWER MOSFET CONSIDERATIONS MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between the terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (Cgs). The PN junction formed during the fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. However, neither method represents the actual operating conditions in RF applications. DRAIN Cgd GATE Cds Cgs Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd SOURCE LINEARITY AND GAIN CHARACTERISTICS In addition to the typical IMD and power gain data presented, Figure 5 may give the designer additional information on the capabilities of this device. The graph represents the small signal unity current gain frequency at a given drain current level. This is equivalent to fT for bipolar transistors. Since this test is performed at a fast sweep speed, heating of the device does not occur. Thus, in normal use, the higher temperatures may degrade these characteristics to some extent. DRAIN CHARACTERISTICS One figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, VDS(on), occurs in the linear region of the output characteristic and is specified under specific test conditions for gate-source voltage and drain current. For MOSFETs, VDS(on) has a positive temperature coefficient and constitutes an important design consideration at high temperatures, because it contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high -- on the order of 109 ohms -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage slightly in excess of the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended. EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY Collector Emitter Base V(BR)CES VCBO IC ICES IEBO VBE(on) VCE(sat) Cib Cob hfe RCE(sat) = MOTOROLA RF DEVICE DATA ............................... ............................... ............................... ............................... ............................... ............................... ............................... ............................... ............................... ............................... ............................... ............................... ............................... Drain Source Gate V(BR)DSS VDGO ID IDSS IGSS VGS(th) VDS(on) Ciss Coss gfs VCE(sat) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . rDS(on) = IC VDS(on) ID MRF150 7 PACKAGE DIMENSIONS A U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. M 1 M Q DIM A B C D E H J K M Q R U 4 R 2 B 3 D K J C H E SEATING PLANE INCHES MIN MAX 0.960 0.990 0.465 0.510 0.229 0.275 0.216 0.235 0.084 0.110 0.144 0.178 0.003 0.007 0.435 --- 45 _NOM 0.115 0.130 0.246 0.255 0.720 0.730 STYLE 2: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 24.39 25.14 11.82 12.95 5.82 6.98 5.49 5.96 2.14 2.79 3.66 4.52 0.08 0.17 11.05 --- 45 _NOM 2.93 3.30 6.25 6.47 18.29 18.54 SOURCE GATE SOURCE DRAIN CASE 211-11 ISSUE N Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; SPD, Strategic Planning Office, 141, 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan. 81-3-5487-8488 Customer Focus Center: 1-800-521-6274 Mfax: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 - http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ MRF150 8 MRF150/D MOTOROLA RF DEVICE DATA