MRF150 - Motorola / Freescale Semiconductor

MRF150MOTOROLA RF DEVICE DATA

The RF MOSFET Line

RFPowerField-EffectTransistor

N–Channel Enhancement–Mode

Designed primarily for linear large–signal output stages up to150 MHz

frequency range.

•Specified 50 Volts, 30 MHz Characteristics

Output Power = 150 Watts

Power Gain = 17 dB (Typ)

Efficiency = 45% (Typ)

•Superior High Order IMD

•IMD(d3) (150 W PEP) — –32 dB (Typ)

•IMD(d11) (150 W PEP) — –60 dB (Typ)

•100% Tested For Load Mismatch At All Phase Angles With

30:1 VSWR

•S–Parameters Available for Download into Frequency Domain Simulators.

See http://motorola.com/sps/rf/designtds/

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage VDSS 125 Vdc

Drain–Gate Voltage VDGO 125 Vdc

Gate–Source Voltage VGS ±40 Vdc

Drain Current — Continuous ID16 Adc

Total Device Dissipation @ TC = 25°C

Derate above 25°CPD300

1.71 Watts

W/°C

Storage Temperature Range Tstg –65 to +150 °C

Operating Junction Temperature TJ200 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case RθJC 0.6 °C/W

NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Order this document

by MRF150/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MRF150

150 W,to150 MHz

N–CHANNEL MOS

LINEAR RF POWER

FET

CASE 211–11, STYLE 2

 Motorola, Inc. 1998

REV 9

MRF150

2MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA) V(BR)DSS 125 — — Vdc

Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) IDSS — — 5.0 mAdc

Gate–Body Leakage Current (VGS = 20 V, VDS = 0) IGSS — — 1.0 µAdc

ON CHARACTERISTICS

Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) VGS(th) 1.0 3.0 5.0 Vdc

Drain–Source On–V oltage (VGS = 10 V, ID = 10 A) VDS(on) 1.0 3.0 5.0 Vdc

Forward T ransconductance (VDS = 10 V, ID = 5.0 A) gfs 4.0 7.0 — mhos

DYNAMIC CHARACTERISTICS

Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Ciss — 400 — pF

Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Coss — 240 — pF

Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Crss — 40 — pF

FUNCTIONAL TESTS (SSB)

Common Source Amplifier Power Gain f = 30 MHz

(VDD = 50 V, Pout = 150 W (PEP), IDQ = 250 mA) f = 150 MHz Gps —

—17

8.0 —

—dB

Drain Efficiency

(VDD = 50 V, Pout = 150 W (PEP), f = 30; 30.001 MHz,

ID (Max) = 3.75 A)

η— 45 — %

Intermodulation Distortion (1)

(VDD = 50 V, Pout = 150 W (PEP),

f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 250 mA) IMD(d3)

IMD(d11) —

—–32

–60 —

—

Load Mismatch

(VDD = 50 V, Pout = 150 W (PEP), f = 30; 30.001 MHz,

IDQ = 250 mA, VSWR 30:1 at all Phase Angles)

ψNo Degradation in Output Power

CLASS A PERFORMANCE

Intermodulation Distortion (1) and Power Gain

(VDD = 50 V, Pout = 50 W (PEP), f1 = 30 MHz,

f2 = 30.001 MHz, IDQ = 3.0 A)

GPS

IMD(d3)

IMD(d9–13)

—

–50

–75

—

NOTE:

1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.

Figure 1. 30 MHz Test Circuit (Class AB)

C1 — 470 pF Dipped Mica

C2, C5, C6, C7, C8, C9 — 0.1 µF Ceramic Chip or

Monolythic with Short Leads

C3 — 200 pF Unencapsulated Mica or Dipped Mica

with Short Leads

C4 — 15 pF Unencapsulated Mica or Dipped Mica

with Short Leads

C10 — 10 µF/100 V Electrolytic

L1 — VK200/4B Ferrite Choke or Equivalent, 3.0 µH

L2 — Ferrite Bead(s), 2.0 µH

R1, R2 — 51 Ω/1.0 W Carbon

R3 — 3.3 Ω/1.0 W Carbon (or 2.0 x 6.8 Ω/1/2 W in Parallel

T1 — 9:1 Broadband T ransformer

T2 — 1:9 Broadband T ransformer

OUTPUT

INPUT

BIAS

0–12 V 50 V

–+

–

C6 C8 C9 C10

DUT

L1 L2

C1 R2 C3

C7 +

–

MRF150MOTOROLA RF DEVICE DATA

Figure 2. Power Gain versus Frequency Figure 3. Output Power versus Input Power

Figure 4. IMD versus Pout Figure 5. Common Source Unity Gain Frequency

versus Drain Current

POWER GAIN (dB)

f, FREQUENCY (MHz)

02 5 10 20 20050 100

Pout, OUTPUT POWER (WATTS)

Pin, INPUT POWER (W ATTS)

250

200

00 1234 5

150

150 MHz30 MHz

IMD, INTERMODULA TION DISTOR TION (dB)

Pout, OUTPUT POWER (WATTS PEP)

–30

–40

–50

–30

–40

–500 40 60 80 100

VDD = 50 V, IDQ = 250 mA, TONE SEPARATION = 1 kHz

1000

800

00 5 10 20

ID, DRAIN CURRENT (AMPS)

fT, UNITY GAIN FREQUENCY (MHz)

VDD = 50 V

IDQ = 250 mA

Pout = 150 W (PEP)

100

250

200

150

100

VDD = 50 V

40 V IDQ = 250 mA

VDD = 50 V

VIDQ = 250 mA

–35

–45

–35

–45

20 120 140 160

150 MHz

30 MHz

600

400

200

15 V

VDS = 30 V

IDS, DRAIN CURRENT (AMPS)

VGS, GATE–SOURCE VOLTAGE (VOLTS)

24 6 8100

VDS = 10 V

gfs = 5 mhos

Figure 6. Gate Voltage versus

Drain Current

1002030

MRF150

4MOTOROLA RF DEVICE DATA

Figure 7. Series Equivalent Impedance

Figure 8. 150 MHz Test Circuit (Class AB)

BIAS

0–12 V

RF OUTPUT

RF INPUT

C2 C3

C4 C5

+DUT

RFC2

C10 C11

++50 Vdc

C7 C8

L3 L2

C1, C2, C8 — Arco 463 or equivalent

C3 — 25 pF, Unelco

C4 — 0.1 µF, Ceramic

C5 — 1.0 µF, 15 WV Tantalum

C6 — 25 pF, Unelco J101

C7 — 25 pF, Unelco J101

C9 — Arco 262 or equivalent

C10 — 0.05 µF, Ceramic

C11 — 15 µF, 60 WV Electrolytic

L1 — 3/4″, 18 A WG into Hairpin

L2 — Printed Line, 0.200″ x 0.500″

L3 — 1″, #16 A WG into Hairpin

L4 — 2 T urns #16 AWG, 5/16 ID

RFC1 — 5.6 µH, Choke

RFC2 — VK200–4B

R1 — 150 Ω, 1.0 W Carbon

R2 — 10 kΩ, 1/2 W Carbon

R3 — 120 Ω, 1/2 W Carbon

150

7.5

4.0

2.0

ZOL*

Zin

f = 175 MHz

136

f = 175 MHz

7.5

4.0

2.0

Zo = 10 Ω

VDD = 50 V

IDQ = 250 mA

Pout = 150 W PEP

ZOL* = Conjugate of the optimum load impedance

ZOL* = into which the device output operates at a

ZOL* = given output power, voltage and frequency.

NOTE: Gate Shunted by 25 Ohms.

MRF150MOTOROLA RF DEVICE DATA

Table 1. Common Source S–Parameters (VDS = 50 V, ID = 2 A)

S11 S21 S12 S22

MHz |S11|φ|S21|φ|S12|φ|S22|φ

ÁÁÁÁÁ

0.936

ÁÁÁÁ

–179

ÁÁÁÁÁ

4.13

ÁÁÁÁ

ÁÁÁÁÁ

0.011

ÁÁÁÁÁ

ÁÁÁÁ

0.844

ÁÁÁÁÁ

–176

ÁÁÁÁÁ

0.936

ÁÁÁÁ

–179

ÁÁÁÁÁ

3.16

ÁÁÁÁ

ÁÁÁÁÁ

0.012

ÁÁÁÁÁ

ÁÁÁÁ

0.842

ÁÁÁÁÁ

–180

ÁÁÁÁÁ

0.936

ÁÁÁÁ

–180

ÁÁÁÁÁ

2.52

ÁÁÁÁ

ÁÁÁÁÁ

0.013

ÁÁÁÁÁ

ÁÁÁÁ

0.855

ÁÁÁÁÁ

–179

ÁÁÁÁÁ

0.937

ÁÁÁÁ

180

ÁÁÁÁÁ

2.13

ÁÁÁÁ

ÁÁÁÁÁ

0.014

ÁÁÁÁÁ

ÁÁÁÁ

0.854

ÁÁÁÁÁ

179

ÁÁÁÁÁ

0.939

ÁÁÁÁ

179

ÁÁÁÁÁ

1.81

ÁÁÁÁ

ÁÁÁÁÁ

0.013

ÁÁÁÁÁ

ÁÁÁÁ

0.870

ÁÁÁÁÁ

179

ÁÁÁÁÁ

0.940

ÁÁÁÁ

179

ÁÁÁÁÁ

1.53

ÁÁÁÁ

ÁÁÁÁÁ

0.013

ÁÁÁÁÁ

ÁÁÁÁ

0.868

ÁÁÁÁÁ

–179

ÁÁÁÁÁ

0.941

ÁÁÁÁ

179

ÁÁÁÁÁ

1.34

ÁÁÁÁ

ÁÁÁÁÁ

0.014

ÁÁÁÁÁ

ÁÁÁÁ

0.855

ÁÁÁÁÁ

–178

ÁÁÁÁÁ

100

ÁÁÁÁÁ

0.942

ÁÁÁÁ

179

ÁÁÁÁÁ

1.21

ÁÁÁÁ

ÁÁÁÁÁ

0.016

ÁÁÁÁÁ

ÁÁÁÁ

0.874

ÁÁÁÁÁ

180

ÁÁÁÁÁ

110

ÁÁÁÁÁ

0.942

ÁÁÁÁ

179

ÁÁÁÁÁ

1.11

ÁÁÁÁ

ÁÁÁÁÁ

0.018

ÁÁÁÁÁ

ÁÁÁÁ

0.875

ÁÁÁÁÁ

178

ÁÁÁÁÁ

120

ÁÁÁÁÁ

0.945

ÁÁÁÁ

178

ÁÁÁÁÁ

0.99

ÁÁÁÁ

ÁÁÁÁÁ

0.019

ÁÁÁÁÁ

ÁÁÁÁ

0.893

ÁÁÁÁÁ

180

ÁÁÁÁÁ

130

ÁÁÁÁÁ

0.946

ÁÁÁÁ

178

ÁÁÁÁÁ

0.88

ÁÁÁÁ

ÁÁÁÁÁ

0.019

ÁÁÁÁÁ

ÁÁÁÁ

0.902

ÁÁÁÁÁ

–179

ÁÁÁÁÁ

140

ÁÁÁÁÁ

0.947

ÁÁÁÁ

178

ÁÁÁÁÁ

0.83

ÁÁÁÁ

ÁÁÁÁÁ

0.019

ÁÁÁÁÁ

ÁÁÁÁ

0.919

ÁÁÁÁÁ

–179

ÁÁÁÁÁ

150

ÁÁÁÁÁ

0.949

ÁÁÁÁ

177

ÁÁÁÁÁ

0.74

ÁÁÁÁ

ÁÁÁÁÁ

0.020

ÁÁÁÁÁ

ÁÁÁÁ

0.910

ÁÁÁÁÁ

–179

ÁÁÁÁÁ

160

ÁÁÁÁÁ

0.949

ÁÁÁÁ

177

ÁÁÁÁÁ

0.71

ÁÁÁÁ

ÁÁÁÁÁ

0.024

ÁÁÁÁÁ

ÁÁÁÁ

0.889

ÁÁÁÁÁ

–180

ÁÁÁÁÁ

170

ÁÁÁÁÁ

0.952

ÁÁÁÁ

177

ÁÁÁÁÁ

0.65

ÁÁÁÁ

ÁÁÁÁÁ

0.026

ÁÁÁÁÁ

ÁÁÁÁ

0.878

ÁÁÁÁÁ

179

ÁÁÁÁÁ

180

ÁÁÁÁÁ

0.953

ÁÁÁÁ

177

ÁÁÁÁÁ

0.59

ÁÁÁÁ

ÁÁÁÁÁ

0.029

ÁÁÁÁÁ

ÁÁÁÁ

0.921

ÁÁÁÁÁ

179

ÁÁÁÁÁ

190

ÁÁÁÁÁ

0.954

ÁÁÁÁ

176

ÁÁÁÁÁ

0.57

ÁÁÁÁ

ÁÁÁÁÁ

0.029

ÁÁÁÁÁ

ÁÁÁÁ

0.949

ÁÁÁÁÁ

178

ÁÁÁÁÁ

200

ÁÁÁÁÁ

0.956

ÁÁÁÁ

176

ÁÁÁÁÁ

0.52

ÁÁÁÁ

ÁÁÁÁÁ

0.028

ÁÁÁÁÁ

ÁÁÁÁ

0.929

ÁÁÁÁÁ

178

ÁÁÁÁÁ

210

ÁÁÁÁÁ

0.955

ÁÁÁÁ

176

ÁÁÁÁÁ

0.51

ÁÁÁÁ

ÁÁÁÁÁ

0.030

ÁÁÁÁÁ

ÁÁÁÁ

0.934

ÁÁÁÁÁ

179

ÁÁÁÁÁ

220

ÁÁÁÁÁ

0.957

ÁÁÁÁ

175

ÁÁÁÁÁ

0.49

ÁÁÁÁ

ÁÁÁÁÁ

0.034

ÁÁÁÁÁ

ÁÁÁÁ

0.918

ÁÁÁÁÁ

177

ÁÁÁÁÁ

230

ÁÁÁÁÁ

0.960

ÁÁÁÁ

175

ÁÁÁÁÁ

0.43

ÁÁÁÁ

ÁÁÁÁÁ

0.039

ÁÁÁÁÁ

ÁÁÁÁ

0.977

ÁÁÁÁÁ

175

ÁÁÁÁÁ

240

ÁÁÁÁÁ

0.959

ÁÁÁÁ

175

ÁÁÁÁÁ

0.42

ÁÁÁÁ

ÁÁÁÁÁ

0.040

ÁÁÁÁÁ

ÁÁÁÁ

0.941

ÁÁÁÁÁ

175

ÁÁÁÁÁ

250

ÁÁÁÁÁ

0.961

ÁÁÁÁ

175

ÁÁÁÁÁ

0.39

ÁÁÁÁ

ÁÁÁÁÁ

0.040

ÁÁÁÁÁ

ÁÁÁÁ

0.944

ÁÁÁÁÁ

176

ÁÁÁÁÁ

260

ÁÁÁÁÁ

0.961

ÁÁÁÁ

175

ÁÁÁÁÁ

0.36

ÁÁÁÁ

ÁÁÁÁÁ

0.040

ÁÁÁÁÁ

ÁÁÁÁ

0.948

ÁÁÁÁÁ

177

ÁÁÁÁÁ

270

ÁÁÁÁÁ

0.960

ÁÁÁÁ

174

ÁÁÁÁÁ

0.35

ÁÁÁÁ

ÁÁÁÁÁ

0.043

ÁÁÁÁÁ

ÁÁÁÁ

0.947

ÁÁÁÁÁ

175

ÁÁÁÁÁ

280

ÁÁÁÁÁ

0.963

ÁÁÁÁ

174

ÁÁÁÁÁ

0.34

ÁÁÁÁ

ÁÁÁÁÁ

0.046

ÁÁÁÁÁ

ÁÁÁÁ

0.929

ÁÁÁÁÁ

174

ÁÁÁÁÁ

290

ÁÁÁÁÁ

0.963

ÁÁÁÁ

174

ÁÁÁÁÁ

0.32

ÁÁÁÁ

ÁÁÁÁÁ

0.048

ÁÁÁÁÁ

ÁÁÁÁ

0.918

ÁÁÁÁÁ

172

ÁÁÁÁÁ

300

ÁÁÁÁÁ

0.965

ÁÁÁÁ

173

ÁÁÁÁÁ

0.32

ÁÁÁÁ

ÁÁÁÁÁ

0.051

ÁÁÁÁÁ

ÁÁÁÁ

0.925

ÁÁÁÁÁ

174

ÁÁÁÁÁ

310

ÁÁÁÁÁ

0.966

ÁÁÁÁ

173

ÁÁÁÁÁ

0.29

ÁÁÁÁ

ÁÁÁÁÁ

0.052

ÁÁÁÁÁ

ÁÁÁÁ

0.953

ÁÁÁÁÁ

174

ÁÁÁÁÁ

320

ÁÁÁÁÁ

0.963

ÁÁÁÁ

173

ÁÁÁÁÁ

0.28

ÁÁÁÁ

ÁÁÁÁÁ

0.054

ÁÁÁÁÁ

ÁÁÁÁ

0.954

ÁÁÁÁÁ

172

ÁÁÁÁÁ

330

ÁÁÁÁÁ

0.965

ÁÁÁÁ

172

ÁÁÁÁÁ

0.26

ÁÁÁÁ

ÁÁÁÁÁ

0.057

ÁÁÁÁÁ

ÁÁÁÁ

0.914

ÁÁÁÁÁ

171

ÁÁÁÁÁ

340

ÁÁÁÁÁ

0.966

ÁÁÁÁ

172

ÁÁÁÁÁ

0.26

ÁÁÁÁ

ÁÁÁÁÁ

0.058

ÁÁÁÁÁ

ÁÁÁÁ

0.925

ÁÁÁÁÁ

171

ÁÁÁÁÁ

350

ÁÁÁÁÁ

0.965

ÁÁÁÁ

172

ÁÁÁÁÁ

0.26

ÁÁÁÁ

ÁÁÁÁÁ

0.062

ÁÁÁÁÁ

ÁÁÁÁ

0.934

ÁÁÁÁÁ

171

ÁÁÁÁÁ

360

ÁÁÁÁÁ

0.968

ÁÁÁÁ

171

ÁÁÁÁÁ

0.25

ÁÁÁÁ

ÁÁÁÁÁ

0.065

ÁÁÁÁÁ

ÁÁÁÁ

0.979

ÁÁÁÁÁ

171

ÁÁÁÁÁ

370

ÁÁÁÁÁ

0.967

ÁÁÁÁ

171

ÁÁÁÁÁ

0.23

ÁÁÁÁ

ÁÁÁÁÁ

0.064

ÁÁÁÁÁ

ÁÁÁÁ

0.993

ÁÁÁÁÁ

168

ÁÁÁÁÁ

380

ÁÁÁÁÁ

0.967

ÁÁÁÁ

171

ÁÁÁÁÁ

0.24

ÁÁÁÁ

ÁÁÁÁÁ

0.068

ÁÁÁÁÁ

ÁÁÁÁ

0.952

ÁÁÁÁÁ

172

ÁÁÁÁÁ

390

ÁÁÁÁÁ

0.969

ÁÁÁÁ

170

ÁÁÁÁÁ

0.22

ÁÁÁÁ

ÁÁÁÁÁ

0.069

ÁÁÁÁÁ

ÁÁÁÁ

0.942

ÁÁÁÁÁ

170

ÁÁÁÁÁ

400

ÁÁÁÁÁ

0.968

ÁÁÁÁ

170

ÁÁÁÁÁ

0.21

ÁÁÁÁ

ÁÁÁÁÁ

0.072

ÁÁÁÁÁ

ÁÁÁÁ

0.936

ÁÁÁÁÁ

172

ÁÁÁÁÁ

410

ÁÁÁÁÁ

0.968

ÁÁÁÁ

170

ÁÁÁÁÁ

0.21

ÁÁÁÁ

ÁÁÁÁÁ

0.076

ÁÁÁÁÁ

ÁÁÁÁ

0.984

ÁÁÁÁÁ

168

ÁÁÁÁÁ

420

ÁÁÁÁÁ

0.970

ÁÁÁÁ

169

ÁÁÁÁÁ

0.20

ÁÁÁÁ

ÁÁÁÁÁ

0.078

ÁÁÁÁÁ

ÁÁÁÁ

0.977

ÁÁÁÁÁ

167

ÁÁÁÁÁ

430

ÁÁÁÁÁ

0.969

ÁÁÁÁ

169

ÁÁÁÁÁ

0.18

ÁÁÁÁ

ÁÁÁÁÁ

0.082

ÁÁÁÁÁ

ÁÁÁÁ

0.959

ÁÁÁÁÁ

168

ÁÁÁÁÁ

440

ÁÁÁÁÁ

0.970

ÁÁÁÁ

169

ÁÁÁÁÁ

0.19

ÁÁÁÁ

ÁÁÁÁÁ

0.082

ÁÁÁÁÁ

ÁÁÁÁ

0.953

ÁÁÁÁÁ

169

MRF150

6MOTOROLA RF DEVICE DATA

Table 1. Common Source S–Parameters (VDS = 50 V, ID = 2 A) continued

S11 S21 S12 S22

MHz |S11|φ|S21|φ|S12|φ|S22|φ

ÁÁÁÁÁ

450

ÁÁÁÁÁ

0.971

ÁÁÁÁ

168

ÁÁÁÁÁ

0.19

ÁÁÁÁ

ÁÁÁÁÁ

0.085

ÁÁÁÁÁ

ÁÁÁÁ

0.960

ÁÁÁÁÁ

168

ÁÁÁÁÁ

460

ÁÁÁÁÁ

0.972

ÁÁÁÁ

168

ÁÁÁÁÁ

0.17

ÁÁÁÁ

ÁÁÁÁÁ

0.086

ÁÁÁÁÁ

ÁÁÁÁ

0.960

ÁÁÁÁÁ

164

ÁÁÁÁÁ

470

ÁÁÁÁÁ

0.972

ÁÁÁÁ

168

ÁÁÁÁÁ

0.17

ÁÁÁÁ

ÁÁÁÁÁ

0.087

ÁÁÁÁÁ

ÁÁÁÁ

0.952

ÁÁÁÁÁ

165

ÁÁÁÁÁ

480

ÁÁÁÁÁ

0.969

ÁÁÁÁ

167

ÁÁÁÁÁ

0.18

ÁÁÁÁ

ÁÁÁÁÁ

0.093

ÁÁÁÁÁ

ÁÁÁÁ

0.977

ÁÁÁÁÁ

166

ÁÁÁÁÁ

490

ÁÁÁÁÁ

0.969

ÁÁÁÁ

167

ÁÁÁÁÁ

0.18

ÁÁÁÁ

ÁÁÁÁÁ

0.099

ÁÁÁÁÁ

ÁÁÁÁ

0.966

ÁÁÁÁÁ

166

ÁÁÁÁÁ

500

ÁÁÁÁÁ

0.969

ÁÁÁÁ

166

ÁÁÁÁÁ

0.17

ÁÁÁÁ

ÁÁÁÁÁ

0.101

ÁÁÁÁÁ

ÁÁÁÁ

0.972

ÁÁÁÁÁ

164

MRF150MOTOROLA RF DEVICE DATA

RF POWER MOSFET CONSIDERATIONS

MOSFET CAPACITANCES

The physical structure of a MOSFET results in capacitors

between the terminals. The metal oxide gate structure

determines the capacitors from gate–to–drain (Cgd), and

gate–to–source (Cgs). The PN junction formed during the

fabrication of the RF MOSFET results in a junction capaci-

tance from drain–to–source (Cds).

These capacitances are characterized as input (Ciss),

output (Coss) and reverse transfer (Crss) capacitances on data

sheets. The relationships between the inter–terminal capaci-

tances and those given on data sheets are shown below . The

Ciss can be specified in two ways:

1. Drain shorted to source and positive voltage at the gate.

2. Positive voltage of the drain in respect to source and zero

volts at the gate. In the latter case the numbers are lower.

However, neither method represents the actual operat-

ing conditions in RF applications.

Cgd

GATE

SOURCE

Cgs

DRAIN

Cds Ciss = Cgd + Cgs

Coss = Cgd + Cds

Crss = Cgd

LINEARITY AND GAIN CHARACTERISTICS

In addition to the typical IMD and power gain data

presented, Figure 5 may give the designer additional informa-

tion on the capabilities of this device. The graph represents the

small signal unity current gain frequency at a given drain

current level. This is equivalent to fT for bipolar transistors.

Since this test is performed at a fast sweep speed, heating of

the device does not occur. Thus, in normal use, the higher

temperatures may degrade these characteristics to some

extent.

DRAIN CHARACTERISTICS

One figure of merit for a FET is its static resistance in the

full–on condition. This on–resistance, VDS(on), occurs in the

linear region of the output characteristic and is specified under

specific test conditions for gate–source voltage and drain

current. For MOSFETs, VDS(on) has a positive temperature

coefficient and constitutes an important design consideration

at high temperatures, because it contributes to the power

dissipation within the device.

GATE CHARACTERISTICS

The gate of the RF MOSFET is a polysilicon material, and

is electrically isolated from the source by a layer of oxide. The

input resistance is very high — on the order of 109 ohms —

resulting in a leakage current of a few nanoamperes.

Gate control is achieved by applying a positive voltage

slightly in excess of the gate–to–source threshold voltage,

VGS(th).

Gate Voltage Rating — Never exceed the gate voltage

rating. Exceeding the rated VGS can result in permanent

damage to the oxide layer in the gate region.

Gate Termination — The gates of these devices are

essentially capacitors. Circuits that leave the gate open–cir-

cuited or floating should be avoided. These conditions can

result in turn–on of the devices due to voltage build–up on the

input capacitor due to leakage currents or pickup.

Gate Protection — These devices do not have an internal

monolithic zener diode from gate–to–source. If gate protection

is required, an external zener diode is recommended.

EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY

Collector Drain. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Emitter Source. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Gate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

V(BR)CES V(BR)DSS

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

VCBO VDGO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

ICID

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

ICES IDSS

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

IEBO IGSS

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

VBE(on) VGS(th)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

VCE(sat) VDS(on)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Cib Ciss

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Cob Coss

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

hfe gfs

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RCE(sat) = VCE(sat)

ICrDS(on) = VDS(on)

MRF150

8MOTOROLA RF DEVICE DATA

PACKAGE DIMENSIONS

CASE 211–11

ISSUE N

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

ESEATING

PLANE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.960 0.990 24.39 25.14

B0.465 0.510 11.82 12.95

C0.229 0.275 5.82 6.98

D0.216 0.235 5.49 5.96

E0.084 0.110 2.14 2.79

H0.144 0.178 3.66 4.52

J0.003 0.007 0.08 0.17

K0.435 ––– 11.05 –––

M45 NOM 45 NOM

Q0.115 0.130 2.93 3.30

R0.246 0.255 6.25 6.47

U0.720 0.730 18.29 18.54

STYLE 2:

PIN 1. SOURCE

2. GATE

3. SOURCE

4. DRAIN

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and

specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola

data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”

must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of

others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other

applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury

or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola

and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees

arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that

Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal

Opportunity/Af firmative Action Employer .

Mfax is a trademark of Motorola, Inc.

How to reach us:

USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; SPD, Strategic Planning Office, 141,

P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan. 81–3–5487–8488

Customer Focus Center: 1–800–521–6274

Mfax: RMFAX0@email.sps.mot.com – TOUCHTONE 1–602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

Motorol a Fax Bac k System – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

– http://sps.motorola.com/mfax/

HOME PAGE: http://motorola.com/sps/

MRF150/D

◊