2KBP005M THRU 2KBP10M SERIES 3N253 THRU 3N259 GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER Reverse Voltage - 50 to 1000 Volts _ Forward Current - 2.0 Amperes Case Style KBPM FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Tt This series is UL listed under the Recognized Component 046011168) sageiva m9 Index, file number E54214 BaeO TOR G60 1768 + Glass passivated chip junctions Typical Im less than 0.1nA + High case dielectric strength 800 le a9 0.125 x 45" BEE (1422) B2t eo S 271 Ideal for printed circuit boards a + High temperature soldering guaranteed: peed Tk. stay 260C/10 seconds at 5 Ibs. (2.3kg) tension DIA. EFA 3B) | [eee MECHANICAL DATA 0.206 {5.1 a a a! ks G.085 {2. 76) . a 2 . smes fe Case: Molded plastic body over passivated junctions Terminats: Plated leads solderable per MIL-STD-750, Polarity shown on front side of case: positive lead by beveled camer Method 2026 Mounting Position: Any Weight: 0.06 ounce, 1.7 grams Ownensions in inches and (mitimaters} MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25C ambient temperature unless otherwise specified. 2KBP | 2KBP 2KBP 2KBP 2KBP 2KBP | 2KBP 06M 005M | 0IM o2M oa oa 10M SYMBOLS | 3N253 | 3N254 | 3N255 | 3N256 | SN257 | 3N258 | 3N259 | UNITS * Maximum repetitive peak reverse voltage VaRM 50 100 200 400 600 800 | 1000 | Volts * Maximum RMS voltage VRMS 35 70 140 280 420 560 700 | Volts * Maximum DC blocking voltage Voc 50 100 200 400 600 800 | 1000 | Volts Maximum average forward output rectified current at Ta=55C tay) 2.0 Amps * Peak forward surge current single haif sine-wave i 60.0 Amps superimposed on rated load (JEDEC Method) Ty=150C | FSM : P Rating for fusing (t < 8.3ms} rt 15.0 Asec * Maximum instantaneous forward voltage drop per leg at 3.14A VE 1 Volts * Maximum DC reverse current Ta=25C \ 5.0 yA at rated DC blocking voltage per leg Ta=125C R 500.0 Typical junction capacitance per leg (NOTE 1) Cy 25.0 pF Typical thermal resistance per leg (NOTE 2) Resa 30.0 CAN Reut 11.0 * Operating junction and storage temperature range =| Tu, TstG -55 to +165 C NOTES: (1) Measured at 1.0 MHz and appiied reverse voltage of 4.0 Volis {2} Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.47 x 0.47" (12 x 12mm) copper pads * JEDEC registered values f,~ GENERAL 4198 37 & SEMICONDUCTOR RATINGS AND CHARACTERISTICS CURVES 3N253 THRU 3N259 / 2KBP005M THRU 2KBP10M FIG. 1 - DERATING CURVE OUTPUT FIG. 2 - MAXIMUM NON-REPETITIVE PEAK RECTIFIED CURRENT FORWARD SURGE CURRENT PER LEG 60 e Te . 60 Hz z SINGLE SINE-WAVE 5 a 50 (JEDEC Method) a INDUCTIVE LOAD & 3 3 rm 40 e MOUNTED WITH Oo 0.47 x 0.47" g Fa E a (42x 12mm) BH sy a COPPER PADS ag 3 2 2s z 20 z* 2 < 1OreryvY\ iy 10 a 3 LEG} 9 ui 1 10 400 z 0 NUMBER OF CYCLES AT 60 Hz 20 40 GO 80 100 120 140 160170 AMBIENT TEMPERATURE, C FIG. 3 - TYPICAL FORWARD CHARACTERISTICS FIG, 4 - TYPICAL REVERSE LEAKAGE PER LEG CHARACTERISTICS PER LEG 20 400 WIDTH=300ps 4% DUTY CYCLE 10 PERES 0.1 0.1 INSTANTANEGUS REVERSE CURRENT, MICROAM- INSTANTANEOUS FORWARD CURRENT, AMPERES 0.01 a 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE 0 a2 04 O08 O08 10 412 414 VOLTAGE, % 0.01 INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG. - TYPICAL JUNCTION CAPACITANCE PER LEG JUNCTION CAPACITANCE, pF 0.4 1 10 100 REVERSE VOLTAGE, VOLTS {., GENERAL . 38 SEMICONDUCTOR