PN3566
NPN SILICON TRANSISTOR DESCRIPTION:
The CENTRAL SEMICONDUCTOR PN3566 is a small
signal NPN silicon transistor, manufactured by the
epitaxial planar process, designed for general purpose
amplifier applications where high collector current is
required.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 30 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 600 mA
Power Dissipation PD 625 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 200 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=20V 50 nA
IEBO V
EB=5.0V 10 µA
BVCBO I
C=100µA 40 V
BVCEO I
C=30mA 30 V
BVEBO I
E=10µA 5.0 V
VCE(SAT) I
C=100mA, IB=10mA 1.0 V
VBE(ON) V
CE=1.0V, IC=100mA 0.9 V
hFE V
CE=10V, IC=2.0mA 80
hFE V
CE=10V, IC=10mA 150 600
Cob V
CB=10V, IE=0 25 pF
R0 (22-July 2010)
www.centralsemi.com
PN3566
NPN SILICON TRANSISTOR
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING:
FULL PART NUMBER
TO-92 CASE - MECHANICAL OUTLINE
www.centralsemi.com
R0 (22-July 2010)
