MCMA25PD1600TB Thyristor \ Diode Module VRRM = 2x 1600 V I TAV = 25 A VT = 1.2 V Phase leg Part number MCMA25PD1600TB Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: TO-240AA Thyristor for line frequency Planar passivated chip Long-term stability Direct Copper Bonded Al2O3-ceramic Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Isolation Voltage: 4800 V~ Industry standard outline RoHS compliant Soldering pins for PCB mounting Base plate: DCB ceramic Reduced weight Advanced power cycling Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20161222c MCMA25PD1600TB Ratings Rectifier Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25C 1600 I R/D reverse current, drain current VT forward voltage drop TVJ = 25C 100 A 4 mA TVJ = 25C 1.22 V 1.47 V 1.20 V IT = 25 A IT = 50 A IT = 25 A IT = 50 A I T(RMS) RMS forward current 180 sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TVJ = 125 C for power loss calculation only thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing V TVJ = 140C TC = 85 C RthCH max. Unit 1700 V VR/D = 1600 V average forward current Ptot typ. VR/D = 1600 V I TAV It min. 1.52 V T VJ = 140 C 25 A 40 A TVJ = 140 C 0.87 V 13 m 1.2 K/W K/W 0.20 TC = 25C 90 W t = 10 ms; (50 Hz), sine TVJ = 45C 400 A t = 8,3 ms; (60 Hz), sine VR = 0 V 430 A t = 10 ms; (50 Hz), sine TVJ = 140 C 340 A t = 8,3 ms; (60 Hz), sine VR = 0 V 365 A t = 10 ms; (50 Hz), sine TVJ = 45C 800 As t = 8,3 ms; (60 Hz), sine VR = 0 V 770 As t = 10 ms; (50 Hz), sine TVJ = 140 C 580 As 555 As t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25C PGM max. gate power dissipation t P = 30 s T C = 140 C 16 t P = 300 s pF 10 W 5 W 0.5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 125 C; f = 50 Hz repetitive, IT = t P = 200 s; di G /dt = 0.45 A/s; 75 A I G = 0.45 A; V = VDRM 25 A (dv/dt)cr critical rate of rise of voltage V = VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 C 1.5 TVJ = -40 C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 C 55 mA TVJ = -40 C 80 mA VGD gate non-trigger voltage TVJ = 140C 0.2 V I GD gate non-trigger current 5 mA IL latching current TVJ = 25 C 150 mA non-repet., I T = 150 A/s 500 A/s 1000 V/s TVJ = 125C R GK = ; method 1 (linear voltage rise) VD = VDRM tp = 10 s V IG = 0.45 A; di G /dt = 0.45 A/s IH holding current VD = 6 V R GK = TVJ = 25 C 100 mA t gd gate controlled delay time VD = 1/2 VDRM TVJ = 25 C 2 s tq turn-off time IG = 0.45 A; di G /dt = 0.45 A/s VR = 100 V; I T = 25 A; V = VDRM TVJ =125 C di/dt = 10 A/s dv/dt = IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved 150 s 20 V/s t p = 200 s Data according to IEC 60747and per semiconductor unless otherwise specified 20161222c MCMA25PD1600TB Package Ratings TO-240AA Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 60 Unit A -40 140 C -40 125 C 125 C 81 Weight g MD mounting torque 2.5 4 Nm MT terminal torque 2.5 4 Nm d Spp/App d Spb/Apb VISOL terminal to terminal 13.0 terminal to backside 16.0 creepage distance on surface | striking distance through air t = 1 second isolation voltage t = 1 minute 50/60 Hz, RMS; IISOL 1 mA 9.7 mm 16.0 mm 4800 V 4000 V Part description M C M A 25 PD 1600 TB Ordering Standard Ordering Number MCMA25PD1600TB Equivalent Circuits for Simulation I V0 R0 Marking on Product MCMA25PD1600TB * on die level = = = = = = = = Module Thyristor (SCR) Thyristor (up to 1800V) Current Rating [A] Phase leg Reverse Voltage [V] TO-240AA-1B Delivery Mode Box Code No. 515042 T VJ = 140 C Thyristor V 0 max threshold voltage 0.87 V R0 max slope resistance * 11.8 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved Quantity 36 Data according to IEC 60747and per semiconductor unless otherwise specified 20161222c MCMA25PD1600TB Outlines TO-240AA 3 IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved 1 5 4 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20161222c MCMA25PD1600TB Thyristor 80 103 400 VR = 0 V 50 Hz, 80% VRRM 60 TVJ = 45C 300 IT ITSM 2 It TVJ = 45C 40 [A] TVJ = 125C [A] TVJ = 140C [A2s] 200 140C 20 TVJ = 140C TVJ = 25C 0 0.5 102 100 1.0 1.5 2.0 0.01 0.1 VT [V] 1 2 t [s] 4 5 6 7 8 910 t [ms] Fig. 3 I t versus time (1-10 s) 100.0 1: IGD, TVJ = 140C 3 2 Fig. 2 Surge overload current ITSM: crest value, t: duration Fig. 1 Forward characteristics 10 1 80 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C 5 4 1 tgd ITAVM 40 1 [V] lim. [s] 1.0 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W 0.1 1 10 100 1000 0.1 0.01 10000 [A] typ. 20 0 0.10 1.00 10.00 0 40 IG [A] IG [mA] 80 120 160 Tcase [C] Fig. 5 Gate controlled delay time tgd Fig. 4 Gate voltage & gate current Fig. 6 Max. forward current at case temperature 1.40 50 Ptot 60 TVJ = 25C 10.0 23 VG dc = 1 0.5 0.4 0.33 0.17 0.08 6 dc = 1 0.5 0.4 0.33 0.17 0.08 40 [W] 30 1.20 RthHA 0.4 0.6 0.8 1.0 2.0 4.0 1.00 ZthJC 0.80 [K/W] 0.60 20 i Rthi (K/W) 1 0.0200 2 0.1300 3 0.2400 4 0.4700 5 0.3400 0.40 10 0.20 ti (s) 0.0004 0.0090 0.0140 0.0700 0.4000 0.00 0 0 10 20 30 IT(AV) [A] 0 40 80 120 160 Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Tamb [C] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20161222c Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: IXYS: MCMA25PD1600TB