IRF 722,723 2.5 AMPERES 400, 350 VOLTS RDS(ON) = 2.5 9 POWER MOS [FET FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. omASE STYLE T0-220AB Also, the extended safe operating area with good linear 4041100) 18295 sooi4 gs transfer characteristics makes it well suited for many linear 2010.8) soe PETE) tH aa fe OES applications such as audio amplifiers and servo motors. 2D F t N-CHANNEL A & 265(6.73) Features tT reeitiue e Polysilicon gate Improved stability and reliability sage x sues Pont : 3 , .220(5.59) e No secondary breakdown Excellent ruggedness | b mer + + 130(3.3} a 3 Ultra-fast switching Independent of temperature A i i _N TERM.1 Voltage controlled High transconductance TERM.2 eeu 38 ae e Low input capacitance Reduced drive requirement TERMS p ut . . se 105267) Lug 1072.72 e Excellent thermal stability Ease of paralleling rot et ro Cereal ae Ee roo UNIT TYPE | TERM.1TERM.2| TERM.3 TAB POWER MOS FET|T0-220-A4B] GATE |ORAIN|SQURCE| DRAIN maximum ratings (Tce = 25C) (unless otherwise specified) RATING SYMBOL IRF722 IRF723 UNITS Drain-Source Voltage Vpss 400 350 Volts Drain-Gate Voltage, Ras = 1MO. VpGrA 400 350 Volts Continuous Drain Current @ Te = 25C ID 2.5 2.5 A c= 100C 1.5 1.5 A Pulsed Drain Current IDM 10 10 A Gate-Source Voitage Vas +20 +20 Volts Total Power Dissipation @ To = 26C Pp 40 40 Watts Derate Above 25C 0.32 0.32 W/?C Operating a and Storage Junction Temperature Range Ty, Tste -55 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Rac 3.12 3.12 C/W Thermal Resistance, Junction to Ambient ReJa 80 80 C/W Maximum Lead Temperature for Soldering Purposes: % from Case for 5 Seconds TL 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 211 electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC |SYMBOL | MIN | TYP | MAX | UNIT | off characteristics Drain-Source Breakdown Voltage IRF722 | BVpss 400 Volts (Vas = OV, Ip = 250 WA) IRF723 350 Zero Gate Voltage Drain Current lpss (Vps = Max Rating, Vgs = OV, To = 25C) _ ~ 250 uA (Vps = Max Rating, 0.8, Veg = OV, To = 125C) _ _ 1000 Gate-Source Leakage Current on characteristics Gate Threshold Voltage To = 25C | Vasctr) 2.0 _ 4.0 Volts - (Vps = Vas, |p = 250 pA) On-State Drain Current (Vag = 10V, Vps = 10V) In(on) | 25 7 7 A Static Drain-Source On-State Resistance (V@s = 10V, Ip = 1.54) RpSs(ON) 2.0 2.5 Ohms Forward Transconductance _ (Vpg = 10V, Ip = 1.5A) Ofs 0.9 1.6 mhos dynamic characteristics input Capacitance Vas = 10V Ciss _ 385 600 pF Output Capacitance Vos = 25V Coss _ 70 200 pF Reverse Transfer Capacitance f=1 MHz Crss _ 12 40 pF switching characteristics* Turn-on Delay Time Vps = 175V ta(on) ~ 16 _ ns Rise Time Ip = 1.5A, Vag = 15V tr _ 10 _ ns Turn-off Delay Time Roen = 50, Res = 12.50 | taffy _ 25 _ ns Fall Time (Res (Equiv.) = 100) te ~ 15 _ ns source-drain diode ratings and characteristics* Continuous Source Current Ig -_ _ 2.5 A Pulsed Source Current Iso ~ - 10 A Diode Forward Voltage _ (To = 25C, Vgg = OV, Ig = 2.5A) Vsp 0.9 18 Volts Reverse Recovery Time try _ 280 _ ns (Ig = 3.0A, dig/dt = 100A/usec, Tc = 125C) Qrr ~ 2.0 uc *Pulse Test: Pulse width < 300 us, duty cycle = 2% 100 80 60 1.0 RATION IN THIS AREA 06 MAY BE LIMITED BY Rpg 04 Ip. ORAIN CURRENT {AMPERES} PULSE 0.2 T).>25C 0.1 1 2 4 6 810 20 40 6080100 200 Vps: DRAIN~SOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 400 600 1000 212 2.4 2.2 CONDITIONS: Rps(on) CONDITIONS: Ip = 1.5 A, Vgg = 10V 2.0 V@s(th) CONDITIONS: Ip = 250#A, Ving = Vgg 1.8 16 1.4 1.2 1.0 0.8 0.6 Rosion) AND Vegiry NORMALIZED 0.4 0.2 0 ~40 0 40 Ty, JUNCTION TEMPERATURE (C) 120 160