STF10N65K3 N-channel 650 V, 0.9 , 10 A, TO-220FP SuperMESH3TM Power MOSFET Features Type VDSS RDS(on) max ID Pw STF10N65K3 650 V <1 10 A 35 W 100% avalanche tested Extremely high dv/dt capability 3 1 Gate charge minimized Very low intrinsic capacitances Improved diode reverse recovery characteristics Zener-protected TO-220FP Application 2 Figure 1. Internal schematic diagram Switching applications D(2) Description This SuperMESH3TM Power MOSFET is the result of improvements applied to STMicroelectronics' SuperMESHTM technology, combined with a new optimized vertical structure. This device boasts an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. G(1) S(3) AM01476v1 Table 1. Device summary Order codes Marking Package Packaging STF10N65K3 10N65K3 TO-220FP Tube November 2011 Doc ID 15732 Rev 2 1/13 www.st.com 13 Contents STF10N65K3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ......................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 .............................................. 9 Doc ID 15732 Rev 2 STF10N65K3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain source voltage 650 V VGS Gate-source voltage 30 V ID Drain current (continuous) at TC = 25 C 10 A ID Drain current (continuous) at TC = 100 C 6.3 A Drain current (pulsed) 40 A Total dissipation at TC = 25 C 35 W IAR Max current during repetitive or single pulse avalanche (pulse width limited by TJMAX) 7.2 A EAS Single pulse avalanche energy (2) 212 mJ Derating factor 0.28 W/C 12 V/ns 2500 V 2500 V -55 to 150 C Value Unit IDM (1) PTOT dv/dt (3) Peak diode recovery voltage slope VESD(G-S) G-S ESD (HBM C=100 pF, R=1.5 k) VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 C) Tj Tstg Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area. 2. Starting Tj = 25 C, ID = IAR, VDD = 50 V 3. ISD 10 A, di/dt = 100 A/s, VPeak < V(BR)DSS Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max 3.57 C/W Rthj-amb Thermal resistance junction-ambient max 62.5 C/W Maximum lead temperature for soldering purpose 300 C Tl Doc ID 15732 Rev 2 3/13 Electrical characteristics 2 STF10N65K3 Electrical characteristics (Tcase = 25 C unless otherwise specified) Table 4. Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 Min. Typ. Max. 650 Unit V IDSS VDS = 650 V Zero gate voltage drain current (VGS = 0) VDS = 650 V, TC=125 C 1 50 A A IGSS Gate-body leakage current (VDS = 0) 10 A 4.5 V 1 VGS = 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 100 A RDS(on) Static drain-source on resistance Table 5. Symbol Ciss Coss Crss Coss eq. 4/13 On /off states 3 VGS = 10 V, ID = 3.6 A Dynamic Parameter Test conditions Min. Typ. Max. Unit Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 - 1180 125 14 - pF pF pF Equivalent output capacitance VDS = 0 to 520 V, VGS = 0 - 77 - pF RG Intrinsic gate resistnce f=1 MHz open drain - 3 - Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge - 42 7.4 23 - nC nC nC VDD = 520 V, ID = 7.2 A, VGS = 10 V (see Figure 16) Doc ID 15732 Rev 2 STF10N65K3 Electrical characteristics Table 6. Switching times Symbol Parameter td(on) tr td(off) tf Table 7. Test conditions Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 310 V, ID = 3.5 A, RG = 4.7 , VGS = 10 V (see Figure 15) Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage IRRM trr Qrr IRRM Typ. - 14.5 14 44 35 Min. Typ. Max Unit - ns ns ns ns Source drain diode Symbol trr Qrr Min. Test conditions Max. Unit - 7.2 28.8 A A ISD = 7 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 7 A, di/dt = 100A/s VDD = 60 V (see Figure 20) - 320 2 13 ns C A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 7 A, di/dt = 100 A/s VDD = 60 V, Tj = 150 C (see Figure 20) - 410 2.9 14 ns C A Min. Typ. 30 - 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5% Table 8. Symbol BVGSO Gate-source Zener diode Parameter Test conditions Gate-source breakdown voltage Igs= 1 mA (open drain) Max. Unit - V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID 15732 Rev 2 5/13 Electrical characteristics STF10N65K3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics AM03922v1 ID (A) 100 D S( on ) O Li per m at ite io d ni by n m this ax a R rea is 10s 10 100s 1ms 10ms Tj=150C Tc=25C 1 0.1 0.1 Figure 4. Sinlge pulse 10 1 100 VDS(V) Output characteristics AM03923v1 ID (A) 18 16 14 7V VGS=10V 12 10 8 6V 6 4 2 0 0 Figure 6. 5V 10 20 VDS(V) Normalized BVDSS vs temperature AM03925v1 BVDSS (norm) AM03924v1 ID (A) 12 11 10 9 8 7 6 5 4 3 2 1 0 1 Figure 7. VDS = 15 V 2 3 4 5 6 7 8 9 VGS(V) Static drain-source on resistance AM03926v1 RDS(on) () 0.95 VGS= 10 V 1.10 0.90 ID= 1 mA 0.85 1.05 0.80 1.00 0.75 0.70 0.95 0.65 0.90 -75 -50 -25 0 6/13 25 50 75 100 125 150 TJ(C) 0.60 0 Doc ID 15732 Rev 2 1 2 3 4 5 6 7 ID(A) STF10N65K3 Figure 8. Electrical characteristics Output capacitance stored energy AM03929v1 Eoss (J) 8 Figure 9. Capacitance variations AM03928v1 C (pF) 1000 Ciss 7 6 100 5 Coss 4 3 Crss 10 2 1 0 0 Figure 10. 100 200 300 400 500 1 0.1 600 VDS(V) 1 100 10 VDS(V) Gate charge vs gate-source voltage Figure 11. Normalized on resistance vs temperature AM03927v1 VGS (V) 12 VDD=520V VDS (V) ID=7A 500 AM03931v1 RDS(on) (norm) 2.5 ID= 1.2 A 10 400 2.0 300 1.5 200 1.0 100 0.5 8 6 4 2 0 0 10 20 30 40 0 50 Qg(nC) Figure 12. Normalized gate threshold voltage vs temperature AM03930v1 VGS(th) (norm) 1.10 0.0 -50 -25 0 25 50 75 100 125 150 TJ(C) Figure 13. Maximum avalanche energy vs temperature AM03933v1 EAS (mJ) ID=7.2 A VDD=50 V 220 ID= 100 A 200 180 1.00 160 140 0.90 120 100 80 0.80 60 40 0.70 -50 -25 0 25 50 75 100 125 150 TJ(C) Doc ID 15732 Rev 2 20 0 0 20 40 60 80 100 120 140 TJ(C) 7/13 Electrical characteristics STF10N65K3 Figure 14. Source-drain diode forward characteristics AM03932v1 VSD (V) TJ=-50C 0.9 0.8 TJ=25C 0.7 TJ=150C 0.6 0.5 0.4 0.3 0 8/13 1 2 3 4 5 6 7 8 ISD(A) Doc ID 15732 Rev 2 STF10N65K3 3 Test circuits Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD 12V 47k 1k 100nF 3.3 F 2200 RL F VGS IG=CONST VDD 100 Vi=20V=VGMAX VD RG 2200 F D.U.T. D.U.T. VG 2.7k PW 47k 1k PW AM01468v1 AM01469v1 Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100H S 3.3 F B 25 1000 F D VDD 2200 F 3.3 F VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 19. Unclamped inductive waveform AM01471v1 Figure 20. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 15732 Rev 2 10% AM01473v1 9/13 Package mechanical data 4 STF10N65K3 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/13 Doc ID 15732 Rev 2 STF10N65K3 Package mechanical data Table 9. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Figure 21. TO-220FP drawing L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_K Doc ID 15732 Rev 2 11/13 Revision history 5 STF10N65K3 Revision history Table 10. 12/13 Document revision history Date Revision Changes 30-Jun-2009 1 First release 14-Nov-2011 2 Updated mechanical data and Section 2.1: Electrical characteristics (curves). Minor text changes. Doc ID 15732 Rev 2 STF10N65K3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. 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