RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICA TION
FEATURES
* Plastic package has underwriters laboratory
* Glass passivated chip construction
* 500 watt peak pulse power capability with a
10/1000us waveform,repetition rate (duty cycle):0.01%
* Excellent clamping capability
* Low incremental surge resistance
* Very fast response time
* Ideal for data line applications
* High temperature soldering guaranteed:
265 oC /10 seconds,0.375”(9.5mm) lead length,
5lbs.(2.3kg) tension
Mechanical Data
Case: JEDEC DO-204AC molded plastic body over passivated junction
Terminals: Solder plated axial leads,solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes TVS cathode
Mounting position: Any
Weight: 0.015 oz., 0.4g
SAC5.0
DO-15
Transient Voltage Suppressors
Low Capacitance T
RANS
Z
ORB
Dimensions in inches and (millimeters)
Maximum Ratings and
Thermal Characteristics
(At T A = 25oC unless otherwise noted)
2006-1
1. Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25
o
C per Fig.2
RATINGS
Steady state power dissipation at T
L
= 75
o
C lead lengths,
.375” ( 9.5 mm ) ( NOTES 2 )
Peak pulse forward surge current with a 10/1000us waveform(fig.3)
SYMBOL
I
FSM
T
J
, T
STG
-55 to + 150
0
C
UNITS
Amps
Peak pulse power dissipation with a 10/1000uS waveform (note 1) Minimum 500
100
LIMIT
Operating and storage temperature range
P
PPM
Watts
P
M(AV)
Watts5.0
NOTES :
1.0 (25.4)
MIN.
.230 (5.8)
.300 (7.6)
1.0 (25.4)
MIN.
.140 (3.6)
.104 (2.6)DIA.
.034 (0.9)
.028 (0.7)DIA.
Diode
Schematic
Transient
Voltage
Suppressor
2. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.
ELECTRICAL CHARACTERISTICS
SAC5.0 300
Maximum
Reverse
Leakage
at VWM
ID
(uA)
44
Reverse
Stand off
Voltage
VWM
*
(Volts)
5.0 7.60
Maximum
Peak Pulse
Current
IPPM
(Amps)
50
Maximum
Clamping
Voltage
at IPPM=5.0uA
VC
(Volts)
75
Rectron
House No.
Minimum
Breakdown
voltage
at I
T
=1.0mA
V(
BR
)
(V)
10.0
Maximum
Junction
Capacitance
at
0 Volts
(PF)
Working
Inverse
Blocking
Voltage
V
WB
(V)
Inverse
Blocking
Leakage
Current
V
WB
I
IB
(mA)
Peak
Inverse
Blocking
Voltage
V
PIB
(V)
1.0 100
* Non -repetitive current pulse,per Fig.3 and derated above TA=25 degree per Fig.2
