S9648 photo IC has spectral response close to human eye sensitivity. Two active areas are made on a single chip. Almost only the visible range
can be measured by finding the difference between the two output signals in the internal current amplifier circuit. Compared to the conventional
type, S9648 offers lower output fluctuations for light sources producing the same illuminance at different color temperatures. S9648 is
encapsulated in a plastic package having the same shape as to metal packages. The shape of S9648 also resembles our 5R type visible sensors
(CdS photoconductive cells), so S9648 can be used as a replacement for those visible sensors.
Features
l
Spectral response close to human eye sensitivity
is attained without using visual-compensated filter.
l
Operation just as easy to use as a photodiode
l
Lower output-current fluctuations compared with
phototransistors and CdS photoconductive cells.
l
Excellent linearity
l
Low output fluctuations for light sources producing the
same illuminance at different color temperatures
Applications
l
Energy-saving sensor for TVs, etc.
l
Light dimmers for liquid crystal panels
l
Various types of light level measurement
PHOTO IC
Photo IC diode
Plastic package shaped the same as metal package
S9648
1
■ Absolute maximum ratings (Ta=25 °C)
Parameter Symbol Value Unit
Maximum reverse voltage VR Max. -0.5 to 16 V
Photocurrent IL10 mA
Forward current IF10 mA
Power dissipation *1P250 mW
Operating temperature Topr -30 to +80 °C
Storage temperature Ts t g -40 to +85 °C
*1: Derate power dissipation at a rate of -3.3 mW/°C above Ta=25 °C.
■ Electrical and optical characteristics (Ta=25 °C, unless otherwise noted.)
Parameter Symbol Condition Min. Typ. Max. Unit
Spectral response range λ- 320 to 820 - nm
Peak sensitivity wavelength λp-560 -nm
Dark current IDVR=5 V - 1.0 50 nA
Photocurrent ILVR=5 V, 100 lx -0.29 -mA
Rise time *2tr 10 to 90 %, VR=7.5 V
RL=10 kΩ, λ=560 nm -6.0-ms
Fall time *2tf 90 to 10 %, VR=7.5 V
RL=10 kΩ, λ=560 nm -2.5 -ms
*2: Rise/fall time measurement method
PULSED LIGHT
FROM LED
(
l
=560 nm)
VO
LOAD
RESISTANCE RL
7.5 V
90 % 2.5 V
10 %
VO
tr tf
0.1 µF
KPICC0041EA
Photo IC diode
S9648
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable . However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K.
Cat. No. KPIC1057E02
Jan. 2007 DN
ILLUMINANCE (lx)
(Typ. Ta=25 ˚C, V
R
=5 V, 2856 K)
PHOTO CURRENT
0.1 1 10
100 nA
1 µA
10 mA
1 mA
100 µA
10 µA
100 1000
0.1
1
10
100
0.01
100 10 k1 k 100 k
LOAD RESISTANCE (Ω)
1 M
RISE/FALL TIMES (ms)
(Typ. Ta=25 ˚C, VR=7.5 V, λ=560 nm, Vo=2.5 V)
tr
tf
2
KPICB0085EA
■ Spectral response
0.1
0.2
0.3
0.4
0.5
0.7
0.9
0.6
0.8
1.0
0
200 400 600 800
WAVELENGTH (nm)
1000 1200
RELATIVE SENSITIVITY
(Typ. Ta=25 ˚C, V
R
=5 V)
KPICB0077EA
■ Rise/fall times vs. load resistance
■ Operating circuit example
KPICC0091EB
PHOTODIODE
FOR SIGNAL OFFSET
CATHODE
ANODE
C
L
R
L
Vout
REVERSE BIAS
POWER SUPPLY
THE DRAWING SURROUNDED
BY THE DOTTED LINE SHOWS
A SCHEMATIC DIAGRAM OF
THE PHOTO IC.
CURRENT AMP
(APPROX. 13000 times)
PHOTODIODE
FOR SIGNAL DETECTION
INTERNAL PROTECTION
RESISTANCE
(APPROX. 150
W
)
■ Linearity
KPICB0086EA
The photo IC diode must be reverse-biased so that a positive potential
is applied to the cathode.
To eliminate high-frequency components, we recommend placing a
load capacitance CL in parallel with load resistance RL as a low-pass
filter.
2πCLRL
1
Cut-off frequency fc
ANODE
CATHODE
Fillet
Tie-bar cut point (including burr, no plating)
5.0 ± 0.2
0.75 ± 0.25
1.5 MAX.
(4.3)
25.4 MIN.
3.5 ± 0.3
(1.0)
1.0 MIN.
2.54 ± 0.5
(SPECIFIED AT THE LEAD ROOT)
(2 ×) 1.0 MAX.
(
2 ×
) 1.0 MAX.
CENTER OF ACTIVE AREA
ACTIVE AREA 0.64 × 0.52
(2 ×)
o
0.5
Sn PLATED LEADS
■ Dimensional outline (unit: mm)
KPICA0057EA
