Continental Device India Limited Data Sheet Page 1 of 3
BD202, BD204, BDX78 PNP PLASTIC POWER TRANSISTORS
Complementary BD201, BD203 and BDX77
Medium Power Switching and Amplifier Applications
ABSOLUTE MAXIMUM RATINGS 202 204 BDX78
Collector-base voltage (open emitter) VCBO max. 60 60 100 V
Collector-emitter voltage (open base) VCEO max. 45 60 80 V
Collector current (DC) ICmax. 8.0 A
Total power dissipation up to Tmb = 25°C Ptot max. 60 W
Junction temperature Tjmax. 150 °C
Collector-emitter saturation voltage
IC = 3 A; IB = 0.3 A VCEsat max. 1.0 V
D.C. current gain
IC = 1 A; VCE = 2 V hFE min. 30
IC = 2 A; VCE = 2 V hFE min. 30
IC = 3 A; VCE = 2 V hFE min. 30
RATINGS (at TA=25°C unless otherwise specified)
Limiting values 202 204 BDX78
Collector-base voltage (open emitter) VCBO max. 60 60 100 V
Collector-emitter voltage (open base) VCEO max. 45 60 80 V
Emitter-base voltage (open collector) VEBO max. 5.0 V
Collector current (DC) ICmax. 8.0 A
BD202, BD204, BDX78
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
B
123
J
M
G
D
H
A
OO
K
N
L
FE
CDIM MIN. MAX.
All diminsions in mm.
A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
D0.90
E 1.15 1.40
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43
J0.56
K 12.70 14.73
L 2.80 4.07
M 2.03 2.92
N 31.24
ODEG 7
12
3
4
IS / IECQ C 700000
IS / IECQ C 750100
IS/IS O 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
TO-220 Plastic Package
Continental Device India Limited Data Sheet Page 2 of 3
Collector current (peak tp = 10 ms) ICM max. 12 A
Collector current
(non-repetitive peak t
p
= 2 ms)
ICSM max. 25 A
Base current IBmax. 3.0 A
Total power dissipation up to Tmb = 25°C Ptot max. 60 W
Junction temperature Tjmax. 150 °C
Storage temperature Tstg –65 to +150
ºC
THERMAL RESISTANCE
From junction to ambient Rth j–a 70 K/W
CHARACTERISTICS
Tamb = 25°C unless otherwise specified 202 204 BDX78
Collector cutoff current
IB = 0; VCE = 30 V ICEO max. 0.2 mA
IB = 0; VCB = 40 V; Tj = 150°C ICBO max. 1.0 mA
Emitter cut-off current
IC = 0; VEB = 5 V IEBO max. 0.5 mA
Breakdown voltages
IC = 0.2 A; IB = 0 VCEO min. 45 60 80 V
IC = 1 mA; IE = 0 VCBO min. 60 60 100 V
IE = 1 mA; IC = 0 VEBO min. 5.0 V
Saturation voltages
IC = 3 A; IB = 0.3 A VCEsat* max. 1.0 V
IC = 6 A; IB = 0.6 A VCEsat* max. 1.5 V
VBEsat* max. 2.0 V
Base-emitter on voltage
IC = 3 A; VCE = 2 V VBE(on)* max. 1.5 V
D.C. current gain
IC = 1 A; VCE = 2 V hFE* min. 30
IC = 2 A; VCE = 2 V hFE* min. 30
IC = 3 A; VCE = 2 V hFE* min. 30
Common emitter small
IC = 0.3 A; VCE = 3 V fhfe min. 25 KHz
Transition frequency
IC = 0.3 A; VCE = 3 V; f = 1 MHz fTmin. 7.0 MHz
Second breakdown collector current
with base forward biased (non-repetitive)
VCE = 40 V; tp = 0.1 s IS/b min. 1.5 A
Switching time
ICon = 2A; IBon = IBoff = 0.2A
Turn on time ton max. 1 µs
Turn off time toff max. 2 µs
* Pulse test: tp 300 µs; duty cycle 2%.
BD202, BD204, BDX78
Continental Device India Limited Data Sheet Page 3 of 3
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
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CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail sales@cdil.com www.cdil.com