DATA SH EET
Product specification
Supersedes data of 1997 Oct 28 1999 Apr 26
DISCRETE SEMICONDUCTORS
BAS40W series
Schottky barrier (double) diodes
o
k, halfpage
M3D102
1999 Apr 26 2
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAS40W series
FEATURES
Low forward voltage
Guard ring protected
Very small SMD package
Low diode capacitance.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes.
DESCRIPTION
Planar Schottky barrier diodes
encapsulated in a SOT323 very small
plastic SMD package. Single diodes
and double diodes with different
pinning are available.
PINNING
PIN BAS40
W -04W -05W -06W
1a
1a
1a
1k
1
2 n.c. k2a2k2
3k
1
k
1
,a
2k
1
,k
2a
1
,a
2
Fig.1 Simplified outline
(SOT323) and pin
configuration.
handbook, 2 columns
3
12
MBC870
Top view
Fig.2 BAS40W single diode
configuration (symbol).
3
12
n.c.
MLC357
Fig.3 BAS40-04W diode
configuration (symbol).
3
12
MLC358
Fig.4 BAS40-05W diode
configuration (symbol).
3
12
MLC359
Fig.5 BAS40-06W diode
configuration (symbol).
3
12
MLC360
MARKING
TYPE NUMBER MARKING
CODE
BAS40W 63
BAS40-04W 64
BAS40-05W 65
BAS40-06W 66
1999 Apr 26 3
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAS40W series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
Tamb =25°C unless otherwise specified.
Note
1. Pulse test: tp= 300 µs; δ= 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT323 standard mounting conditions.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VRcontinuous reverse voltage 40 V
IFcontinuous forward current 120 mA
IFRM repetitive peak forward current tp1s; δ≤0.5 120 mA
IFSM non-repetitive peak forward current tp<10 ms 200 mA
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb operating ambient temperature 65 +150 °C
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
VFcontinuous forward voltage see Fig.6
IF= 1 mA 380 mV
IF= 10 mA 500 mV
IF=40mA 1 V
I
Rcontinuous reverse current VR= 30 V; note 1; see Fig.7 1 µA
VR= 40 V; note 1; see Fig.7 10 µA
τcharge carrier life time IF= 5 mA; Krakauer method 100 ps
Cddiode capacitance VR= 0; f = 1 MHz; see Fig.9 5 pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 625 K/W
1999 Apr 26 4
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAS40W series
GRAPHICAL DATA
Fig.6 Forward current as a function of forward
voltage; typical values.
(1) Tamb = 150 °C.
(2) Tamb =85°C.
(3) Tamb =25°C.
(4) Tamb =40 °C.
handbook, halfpage
10
2
10
1
10
2
0
MLC361 - 1
0.6 0.80.40.2 1.0
V (V)
10
1
IF
(mA)
F
(1) (2) (3) (4)
Fig.7 Reverse current as a function of reverse
voltage; typical values.
(1) Tamb = 150 °C.
(2) Tamb =85°C.
(3) Tamb =25°C.
handbook, halfpage
10
3
10
2
10
1
10
2
10
1
0
MLC362
2010 4030 VR (V)
IR
(µA)
(1)
(2)
(3)
Fig.8 Differential forward resistance as a function
of forward current; typical values.
f = 10 KHz.
handbook, halfpage
MLC364
11010
2
1
10
3
10
10
2
10
1
rdiff
()
I (mA)
F
Fig.9 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tamb =25°C.
handbook, halfpage
01020 4030
5
0
4
MLC363
3
2
1
VR (V)
Cd
(pF)
1999 Apr 26 5
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAS40W series
PACKAGE OUTLINE
UNIT A1
max bpcD Ee
1
H
E
L
pQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.1
1.1
0.8 0.4
0.3 0.25
0.10 2.2
1.8 1.35
1.15 0.65
e
1.3 2.2
2.0 0.23
0.13 0.20.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323 SC-70
wM
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
vMA
AB
y
0 1 2 mm
scale
A
X
12
3
Plastic surface mounted package; 3 leads SOT323
97-02-28
1999 Apr 26 6
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAS40W series
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1999 Apr 26 7
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAS40W series
NOTES
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Printed in The Netherlands 115002/00/03/pp8 Date of release: 1999 Apr 26 Document order number: 9397 750 05797