JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT--23 1. BASE S9012LT1 2. EMITTER TRANSISTOR PNP 3. COLLECTOR FEATURES Power dissipation PCM : 0.3 WTamb=25 Collector current ICM : -0.5 A Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range T J T stg: -55 to +150 ELECTRICAL CHARACTERISTICSTamb=25 unless otherwise specified Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO Ic= -100A Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO MIN Unit : mm TYP MAX UNIT -40 V Ic= -1mA IB=0 -25 V IE=-100A IC=0 -5 V IE=0 Collector cut-off current ICBO VCB=-40 V , IE=0 -0.1 A Collector cut-off current ICEO VCE=-20V , IB=0 -0.1 A Emitter cut-off current IEBO VEB= -5V , -0.1 A hFE(1) VCE=-1V, IC= -50m A 120 hFE(2) VCE=-1V, IC=-500mA 40 IC=0 350 DC current gain Collector-emitter saturation voltage VCE(sat) IC=-500 mA, IB= -50m A -0.6 V Base-emitter saturation voltage VBE(sat) IC=-500 mA, IB= -50m A -1.2 V Transition frequency CLASSIFICATION OF hFE(1) DEVICE MARKING: S9012LT1=2T1 fT VCE=-6V, f=30MHz IC= -20mA 150 MHz SOT-23 PACKAGE OUTLINE DIMENSIONS D b L E E1 L1 0.2 e C Symbol A A1 A2 e1 Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 e e1 1.800 L 0.100 0.037TPY 0.950TPY 2.000 0.071 0.550REF 0.079 0.022REF L1 0.300 0.500 0.012 0.020 0 8 0 8