AP9620GM Pb Free Plating Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On Resistance D D C Capable of 2.5V Drive D D Fast Switching G Simple Drive Requirement S SO-8 BVDSS -20V RDS(ON) 20m ID -9.5A S S Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G S The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Rating Units -20 V 8 V 3 -9.5 A 3 -7.6 A Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current -76 A PD@TA=25 Total Power Dissipation 2.5 W Linear Derating Factor 0.02 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient Data and specifications subject to change without notice 3 Max. Value Unit 50 /W 20020502 AP9620GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions BVDSS Drain-Source Breakdown Voltage BVDSS/Tj RDS(ON) -20 - - V Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA - -0.037 - V/ Static Drain-Source On-Resistance2 VGS=-4.5V, ID=-9.5A - - 20 m VGS=-2.5V, ID=-6.0A - - 35 m VDS=VGS, ID=-250uA - - -1 V VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS VDS=-10V, ID=-9.5A - 28 - S o VDS=-20V, VGS=0V - - -1 uA o Drain-Source Leakage Current (Tj=70 C) VDS=-16V, VGS=0V - - -25 uA Gate-Source Leakage VGS= 8V - - 100 nA ID=-9.5A - 30 - nC Drain-Source Leakage Current (Tj=25 C) IGSS VGS=0V, ID=-250uA Min. Typ. Max. Units 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-10V - 6 - nC Qgd Gate-Drain ("Miller") Charge VGS=-5V - 3.5 - nC VDS=-10V - 26 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-9.5A - 500 - ns td(off) Turn-off Delay Time RG=6,VGS=-4.5V - 70 - ns tf Fall Time RD=1.05 - 300 - ns Ciss Input Capacitance VGS=0V - 2158 - pF Coss Output Capacitance VDS=-15V - 845 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 230 - pF Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) 2 Forward On Voltage Test Conditions Min. Typ. Max. Units VD=VG=0V , VS=-1.2V - - -2.08 A Tj=25, IS=-2.5A, VGS=0V - - -1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 /W when mounted on Min. copper pad. AP9620GM 120 100 -10V T C =25 o C -10V T C =150 o C -8.0V 80 -8.0V -ID , Drain Current (A) -ID , Drain Current (A) 90 -6.0V 60 V GS =-4.0V 60 -6.0V V GS =-4.0V 40 30 20 0 0 0 2 4 0 6 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 4 6 8 Fig 2. Typical Output Characteristics 1.6 40 I D =-9.5A V GS =4.5V I D =-9.5A T C =25 1.4 Normalized R DS(ON) 35 RDS(ON) (m ) 2 -V DS , Drain-to-Source Voltage (V) 30 25 1.2 1.0 0.8 20 0.6 15 1 2 3 4 5 -V GS (V) Fig 3. On-Resistance v.s. Gate Voltage 6 -50 0 50 100 T j , Junction Temperature ( o C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 150 AP9620GM 3 10 2.5 2 6 PD (W) -ID , Drain Current (A) 8 1.5 4 1 2 0.5 0 0 25 50 75 100 125 150 0 30 60 90 120 150 o o T c , Case Temperature ( C) T c , Case Temperature ( C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 1 1000 Normalized Thermal Response (R thja) Duty Factor = 0.5 100 100us 10 -ID (A) 1ms 10ms 1 100ms 1s 10s DC 0.1 T C =25 o C Single Pulse 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t Single Pulse T Duty Factor = t/T Peak Tj = P DM x Rthja + Ta Rthja=125 oC/W 0.001 0.01 0.1 1 10 -V DS (V) Fig 7. Maximum Safe Operating Area 100 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig 8. Effective Transient Thermal Impedance AP9620GM f=1.0MHz 7 10000 I D =-9.5A V DS =-10V 5 Ciss 4 C (pF) -VGS , Gate to Source Voltage (V) 6 1000 Coss 3 2 Crss 1 100 0 0 5 10 15 20 25 30 35 1 40 5 9 13 17 21 25 29 -V DS (V) Q G , Total Gate Charge (nC) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 1 100.00 0.8 10.00 0.6 -VGS(th) (V) -IS(A) T j =150 o C o T j =25 C 1.00 0.4 0.10 0.2 0.01 0 0.1 0.3 0.5 0.7 0.9 1.1 1.3 -V SD (V) Fig 11. Forward Characteristic of Reverse Diode 1.5 -50 0 50 100 o T j , Junction Temperature ( C) Fig 12. Gate Threshold Voltage v.s. Junction Temperature 150 AP9620GM VDS 90% RD VDS D 0.5 x RATED VDS G RG TO THE OSCILLOSCOPE 10% S VGS VGS -5V td(on) Fig 13. Switching Time Circuit td(off) tf tr Fig 14. Switching Time Waveform VG VDS QG TO THE OSCILLOSCOPE D 0.5 x RATED VDS -4.5V QGS G S QGD VGS -1~-3mA I I G D Charge Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform Q