TECHNICAL DATA
NPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL
TRANSISTOR
Qualified per MIL-PRF-19500/421
Devices Qualified Level
2N3838 2N4854
2N4854U
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol 2N3838(2)
2N4854, U Unit
Collector-Emitter Voltage VCEO 40 40 Vdc
Collector-Base Voltage VCBO 60 60 Vdc
Emitter-Base Voltage VEBO 5.0 5.0 Vdc
Collector Current IC 600 600 mAdc
One
Transistor Total
Device
Total Power Dissipation @ TA =+250C
@ TC + 250C(1) PT 0.25(2)
0.7(4) 0.35
1.4 0.30(3)
1.0(5) 0.60
1.2 W
W
Operating & Storage Junction Temp. Range TJ 200 0C
Operating & Storage Junction Temp. Range Tstg -55 to +200 0C
Lead to Case Voltage ±120 Vdc
1) TC rating do not apply to Surface Mount devices (2N4854U)
2) For TA > +250C Derate linearly 1.43 mW/0C (one transistor) 2.00 mW/0C (both transistors)
3) For TA > +250C Derate linearly 1.71 mW/0C (one transistor) 3.43 mW/0C (both transistors)
4) For TC > +250C Derate linearly 4.0 mW/0C (one transistor) 8.0 mW/0C (both transistors)
5) For TC > +250C Derate linearly 5.71 mW/0C (one transistor) 11.43 mW/0C (both transistors)
TO-78*
2N4854
6 Pin Surface Mount*
2N4854U
6 Lead Flatpak*
2N3838
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
IC = 10 mAdc V(BR)CEO 40 Dc
Collector-Base Cutoff Current
VCB = 60 Vdc ICBO(1) 10 µAdc
Collector-Base Cutoff Current
VCB = 50 Vdc 2N3838
2N4854, U ICBO(2) 50
10
ηAdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
VEB = 3.0 Vdc IEBO 10
10 µAdc
ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N3838, 2N4854, 2N4854U JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS
Forward-Current Transfer Ratio
IC = 150 mAdc, VCE = 1 Vdc
IC = 100 µAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 300 mAdc, VCE = 10 Vdc
hFE
50
35
50
75
100
35
300
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc VCE(sat) 0.40 Vdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc VBE(sat) 0.80 1.25 Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz hfe 60 300
Forward Current Transfer Ratio, Magnitude
IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz hfe 2.0 10
Small-Signal Common Emitter Input Impedance
IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz hje 1.5 9.0 kΩ
Small-Signal Common Emitter Output Admittance
IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz hoe 50 µhmo
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 8.0 pF
Noise Figure
IC = 100 µAdc, VCE = 10 Vdc, f = 1.0 kHz, RG =1.0 kΩ NF 8.0 dB
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 150 mAdc; IB1 = 15 mAdc ton 45 ηs
Turn-Off Time
VCC = 30 Vdc; IC = 150 mAdc; IB1 = IB2 = 15 mAdc toff 300 ηs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
