SOT-323 Plastic-Encapsulate Transistors MMST3906 TrRansisToR (PNP) S0T=323 y 1.BASE ; FEATURES epiitias 2 S.COLLECTOR Power dissipation Peu: O02 W | Tamb=25 0 ) Collector cunent leu -0.2 A Collector-base voltage Vier} ceo: -40 Vv Operating and storage junction temperature range Ty, Tayi 860 to +1500 Lonitsmien ELECTRICAL CHARACTERISTICS (Tamb=25* unless otherwise specified) Parameter Symbal Test conditions MIN KIAX UNIT Collector-base breakdown voltage ViBROSES k=-10 pA, k=O -40) V Coellector-emitter breakdown voltage ViEROED k=-1mA, p20 -40} V Emitter-base breakdown vollage ViBRIEBD e=-10 2A. ket 4 V Collector cut-off current lees Meee -40V, lest 4.1 A Collector cut-off current lego Meee OV, lped 4.1 A Emitter cut-off current lese Ven SV, eed 4.1 A Hire 1 Veez-1 k= -ftOmA 100 300 DC current gain Fire 2 Veez-iW ke 4S0m4 60 Coellector-emitter saturation vallage Vee( gat be-60 mA, lp Ser 4.3 y Bage-emitter saturation voltage Vex sat] i= -50 mA, le mA 0.85 Vv Transition f eo Seca 200 MH a i f=100MHz VWoe=-SV, EEO Output Capacitance Con ae 4.5 pF f1MHz Delay time ly Vec=-3V. k=-10mA a5 ne Rise time t Vecion =O. 5 ei =1 mA 35 ns Storage time ts c=-3V k=-10mA 2265 nS Fall time ti ie= Ins= -1mA TS ns Marking: K5N