VS-STPS40L15CTPbF, VS-STPS40L15CT-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 20 A FEATURES Base 2 common cathode Anode TO-220AB * * * * * Anode 2 1 Common 3 cathode * * * * PRODUCT SUMMARY Package TO-220AB IF(AV) 2 x 20 A VR 15 V VF at IF See Electrical table IRM max. 600 mA at 100 C TJ max. 125 C Diode variation Common cathode EAS 10 mJ 125 C TJ operation (VR < 5 V) Optimized for OR-ing applications Ultra low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Compliant to RoHS Directive 2002/95/EC Designed and qualified according to JEDEC-JESD47 Halogen-free according to IEC 61249-2-21 definition (-N3 only) DESCRIPTION The center tap Schottky rectifier module has been optimized for ultra low forward voltage drop specifically for the OR-ing of parallel power supplies. The proprietary barrier technology allows for reliable operation up to 125 C junction temperature. Typical applications are in parallel switching power supplies, converters, reverse battery protection, and redundant power subsystems. MAJOR RATINGS AND CHARACTERISTICS CHARACTERISTICS SYMBOL IF(AV) Rectangular waveform VRRM VALUES UNITS 40 A 15 V IFSM tp = 5 s sine 700 A VF 19 Apk, TJ = 125 C (per leg, typical) 0.25 V - 55 to 125 C TJ VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM VS-STPS40L15CTPbF VS-STPS40L15CT-N3 UNITS 15 15 V ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER Maximum average forward current See fig. 5 TEST CONDITIONS per device VALUES IF(AV) 50 % duty cycle at TC = 85 C, rectangular waveform 40 Maximum peak one cycle non-repetitive surge current per leg See fig. 7 IFSM Repetitive avalanche current per leg IAR Current decaying linearly to zero in 1 s Frequency limited by TJ maximum VA = 1.5 x VR typical 2 Non-repetitive avalanche energy per leg EAS TJ = 25 C, IAS = 2 A, L = 6 mH 10 Revision: 30-Aug-11 UNITS 20 per leg 5 s sine or 3 s rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 700 A 330 mJ Document Number: 94330 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-STPS40L15CTPbF, VS-STPS40L15CT-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 19 A Forward voltage drop per leg See fig. 1 VFM (1) TJ = 25 C 40 A 19 A TJ = 125 C 40 A Reverse leakage current per leg See fig. 2 IRM (1) Threshold voltage VF(TO) TJ = 25 C VR = Rated VR TJ = 100 C TYP. MAX. - 0.41 - 0.52 0.25 0.33 0.37 0.50 - 10 - 600 TJ = TJ maximum UNITS V mA 0.182 V 7.6 m Forward slope resistance rt Maximum junction capacitance per leg CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 C - 2000 pF Typical series inductance per leg LS Measured lead to lead 5 mm from package body 8 - nH Maximum voltage rate of change dV/dt Rated VR 10 000 V/s Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum junction temperature range TJ - 55 to 125 Maximum storage temperature range TStg - 55 to 150 Maximum thermal resistance, junction to case per leg RthJC DC operation See fig. 4 1.5 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased (only for TO-220) 0.50 Maximum thermal resistance, junction to ambient RthJA DC operation (for D2PAK and TO-262) Approximate weight Mounting torque Marking device Revision: 30-Aug-11 minimum maximum Non-lubricated threads Case style TO-220AB UNITS C C/W 40 2 g 0.07 oz. 6 (5) kgf * cm 12 (10) (lbf * in) STPS40L15CT Document Number: 94330 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-STPS40L15CTPbF, VS-STPS40L15CT-N3 Vishay Semiconductors 1000 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com 100 TJ = 125 C TJ = 75 C TJ = 25 C 10 1 TJ = 100 C 100 TJ = 75 C 10 TJ = 50 C TJ = 25 C 1 0.1 0 0.2 0.4 0.6 0.8 1.2 1.0 1.4 3 0 1.6 6 9 12 15 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 10 000 TJ = 25 C 1000 100 0 5 15 10 20 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.1 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC Single pulse (thermal resistance) 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 30-Aug-11 Document Number: 94330 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-STPS40L15CTPbF, VS-STPS40L15CT-N3 Vishay Semiconductors 100 14 95 12 90 Average Power Loss (W) Allowable Case Temperature (C) www.vishay.com Square wave (D = 0.50) 85 80 75 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 10 8 RMS limit 6 4 DC 2 See note (1) 70 0 0 4 8 12 20 16 24 0 5 10 15 20 25 30 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 10 000 1000 tp - Square Wave Pulse Duration (s) Fig. 7 - Maximum Non-Repetitive Surge Current L D.U.T. IRFP460 Rg = 25 Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 30-Aug-11 Document Number: 94330 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-STPS40L15CTPbF, VS-STPS40L15CT-N3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- STPS 1 2 40 L 15 CT PbF 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Schottky STPS series 3 - Current rating (40 = 40 A) 4 - L = Low voltage drop 5 - Voltage rating (15 = 15 V) 6 - CT = Essential part number 7 - Environmental digit PbF = Lead (Pb)-free and RoHS compliant -N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-STPS40L15CTPbF 50 1000 Antistatic plastic tube VS-STPS40L15CT-N3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information Revision: 30-Aug-11 www.vishay.com/doc?95222 TO-220AB PbF www.vishay.com/doc?95225 TO-220AB -N3 www.vishay.com/doc?95028 Document Number: 94330 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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