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February 2007
FAN73832 Half-Bridge Gate-Drive IC
© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN73832 Rev. 1.0.2
FAN73832
Half-Bridge Gate-Drive IC
Features
Floating Channe l for Bootstrap Operation to +600V
Typically 350mA/650mA Sourcing/Sinking Current
Driving Capability for Both Channels
Extended Allowable Negative VS Swing to -9.8V for
Signal Propagation at VDD=VBS=15V
High-Side Output in Phase of IN Signal
Built-in UVLO Functions for Both Channels
Built-in Common-Mode dv/dt Noise Canceling Circu it
Internal 400ns Minimum Dead-Time at RDT=20KΩ
Programmable Tu rn-on Delay-Time Control
(Dead-Time)
Applications
SMPS
Motor Drive Inverter
Fluorescent Lamp Ballast
HID Ballast
Description
The FAN73832 is a half-bridge, gate-drive IC with shut-
down and programmable dead-time control function s for
driving MOSFETs and IGBTs, operating up to +600V.
Fairchild’s high-voltage process and common-mode
noise canceling technique provide stable operation of
high-side driver under high dv/dt noise circumstances.
An advanced level-shift circuit allows high-side gate
driver operation up to VS=-9.8V (typical) for VBS=15V.
The UVLO circuits for both channels prevent malfunction
when VDD and VBS are lower than the specified thresh-
old voltage.
Output drivers typically source/sink 350mA/650mA,
respectively, which is suitable for all kinds of half- and
full-bridge inverters.
Ordering Information
Note:
1. These devices passed wave soldering test by JESD22A-111.
8-SOP 8-DIP
Part Number Package Pb-Free Operating Temperature Range Packing Method
FAN73832M(1) 8-SOP Yes -40°C ~ 125°C Tube
FAN73832MX(1) Tape & Reel
FAN73832N 8-DIP Tube
FAN73832 Half-Bridge Gate-Drive IC
© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN73832 Rev. 1.0.2 2
Typical Application Diagrams
Figure 1. Application Circuit for Half-Bridge Switching Power Supply
Figure 2. Application Circuit for Full-Bridge DC Motor Driver
VDD
VDC
PWM IC
PWM
Shutdown
Control
1
3
2
VDD LO
VB
VS
HO
GND
IN
4
FAN73832
8
5
6
7
RDT
DBOOT
CBOOT
DT/ SD
RBOOT
FAN7 383 2 Rev.01
HO
VDD
GND
IN
FAN73832
DC Motor
Controller
PHA
PHB
LO
SD
DT/ SD
M
HO
GND
IN
FAN73832
LO
DT/ SD
FAN73832 Rev.01
VDC
VCC
VDD
VBVB
VS
VSForward
Reverse
FAN73832 Half-Bridge Gate-Drive IC
© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN73832 Rev. 1.0.2 3
Internal Block Diagram
Figure 3. Functional Block Diagram of FAN73832
UVLO
DRI VER
PULS E
GEN ERATOR
3
1
4
2
8
6
IN
VDD
GND
LO
VB
HO
VS
R
R
SQ
DRI VER
HS( ON/ OFF)
LS( ON/ OFF) DELAY
UVLO
SCHMITT
TRIGGER INPUT
DEAD - TIME
NOISE
CANCELLER
5
7
DT/SD
RDTINT
CONTROL
FAN73832 Rev:00
FAN73832 Half-Bridge Gate-Drive IC
© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN73832 Rev. 1.0.2 4
Pin Assignments
Figure 4. Pin Configuration (Top View)
Pin Definitions
Pin # Name Description
1 IN Logic Input
2 GND Ground
3DT/SD
Dead-Time Control with External Resistor and Shutdown Function
4V
DD Low-Side Supply Voltage
5 LO Low-Side Driver Output
6V
SHigh-Side Floating Supply Return
7 HO High-Side Driver Output
8V
BHigh-Side Floating Supply
LO
IN
VDD
VS
HO
VB
GND
1
2
3
4
8
7
6
5
FAN73832
DT/SD
FAN73832 Rev:00
FAN73832 Half-Bridge Gate-Drive IC
© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN73832 Rev. 1.0.2 5
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. TA=25°C unless otherwise specified.
Notes:
2. Mounted on 76.2 x 114.3 x 1.6mm PCB (FR-4 glass epoxy ma terial).
3. Refer to the following standards:
JESD51-2: Integral circuits thermal test method environmental conditions - Natural convection
JESD51-3: Low effective thermal conductivity test board for leaded surface mount packages
4. Do not exceed PD under any circumstances.
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to Absolute Maximum Ratings.
Symbol Parameter Min. Max. Unit
VSHigh-side offset voltage VB-25 VB+0.3 V
VBHigh-side floating supply voltage -0.3 625 V
VHO High-side floating output voltag e HO VS-0.3 VB+0.3 V
VDD Low-side and logic-fixed supply voltage -0.3 25 V
VLO Low-side output voltage LO -0.3 VDD+0.3 V
VIN Logic input voltage (IN) -0.3 VDD+0.3 V
VDT/SD Dead-time and shutdown control voltag e -0.3 5.0 V
GND Logic ground VDD-25 VDD+0.3 V
dVS/dt Allowable offset voltage slew rate 50 V/ns
PD(2)(3)(4) Power dissipation 8-SOP 0.625 W
8-DIP 1.25
θJA Thermal resistance, junction-to-ambient 8-SOP 200 °C/W
8-DIP 100
TJJunction temperature 150 °C
TSTG Storage temperature 150 °C
Symbol Parameter Condition Min. Max. Unit
VBHigh-side floating supply voltage VS+15 VS+20 V
VSHigh-side floating supply offset voltage 6-VDD 600 V
VDD Low-side supply voltage 15 20 V
VHO High-side (HO) output voltage VS VBV
VLO Low-side (LO) output voltage GND VDD V
VIN Logic input voltage (IN) GND VDD V
TAAmbient temperature -40 125 °C
FAN73832 Half-Bridge Gate-Drive IC
© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN73832 Rev. 1.0.2 6
Electrical Characteristics
VBIAS (VDD, VBS)=15.0V, RDT=20KΩ,TA=25°C, unless otherwise specified. The VIN and IIN parameters are referenced
to GND. The VO and IO parameters are referenced to VS and COM and are applicable to the respective ou tputs H O
and LO.
Note:
5. This parameter guaranteed by design.
Symbol Parameter Condition Min. Typ. Max. Unit
SUPPLY CURRENT SECTION
IQBS Quiescent VBS supply current VIN=0V or 5V 35 90
µA
IQDD Quiescent VDD supply cu rrent VIN=0V or 5V, RDT=20KΩ300 450
ISD(5) Shutdown supply current DT/SD=GND 650 900
IPBS Operating VBS supply current fIN=20kHz, rms value 400 700
IPDD Operating VDD supply current fIN=20kHz, rms value 650 850
ILK Offset supply leakage current VB=VS=600V 10
POWER SUPPLY SECTION
VDDUV+
VBSUV+
VDD and VBS supply under-voltage
positive going threshold 10.7 11.6 12.5 V
VDDUV-
VBSUV-
VDD and VBS supply under-voltage
negative going threshold 10.0 10.8 11.6 V
VDDUVH
VBSUVH
VDD supply under-voltage lockout
hysteresis 0.8 V
DEAD-TIME CONTROL SECTION
RDTINT Internal dead-time setting resistance 20 KΩ
VDT Normal voltage at DT RDT=20KΩ3.0 V
GATE DRIVER OUTPUT SECTION
VOH High-level output voltage, VBIAS-VOIO=20mA 1.0 V
VOL Low-level output voltage, VO0.6 V
IO+ Output high short-circuit pulse current VO=0V, VIN=5V with PW<10µs 250 350 mA
IO- Output low short-circuit pulsed current VO=15V, VIN=0V with PW<10µs 500 650 mA
VSAllowable negative VS pin voltage for
IN signal propagation to HO -9.8 -7.0 V
LOGIC INPUT SECTION (INPUT and SHUTDOWN)
VIH Logic "1" input voltage 2.9 V
VIL Logic "0" input voltage 1.2 V
IIN+ Logic "1" input bias current VIN=5V 50 100 µA
IIN- Logic "0" input bias current VIN=0V 2.0 µA
SD+ Shutdown "1" input voltage 1.2 V
SD- Shutdown "0" input voltage 2.9 V
RPD Input pull-down resistance 100 KΩ
FAN73832 Half-Bridge Gate-Drive IC
© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN73832 Rev. 1.0.2 7
Dynamic Electrical Characteristics
VBIAS (VDD, VBS)=15.0V, VS=GND, CL=1000pF, RDT=20KΩ and TA = 25°C, unless otherwise specified.
Note:
5. These parameters guaranteed by design.
Symbol Parameter Conditions Min. Typ. Max. Unit
tON Turn-on propagation delay VS=0V, RDT=20KΩ580 730
ns
tOFF Turn-off propagation delay VS=0V or 600V(5), RDT=20KΩ180 230
tRTurn-on rise time CL=1000pF 50 100
tFTurn-off fall time CL=1000pF 30 80
tSD(5) Shutdown propagation delay 100 180
DT1, DT2 Dead-time LO OFF to HO ON & HO
OFF to LO ON RDT =20KΩ300 400 500 ns
RDT = 200KΩ1.20 1.68 2.30 µs
DMT Dead-time matching RDT = 20KΩ060
ns
RDT =200KΩ0 150
FAN73832 Half-Bridge Gate-Drive IC
© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN73832 Rev. 1.0.2 8
Typical Characteristics
Figure 5. VDD/VBS UVLO (+) vs. Temperature Figure 6. VDD/VBS UVLO (-) vs. Temperature
Figure 7. VDD Quiescent Current vs. Temperature Figure 8. VBS Quiescent Current vs. Temperature
Figure 9. VDD Operating Current vs. Temperature Figure 10. VBS Operating Current vs. Temperature
-40 -20 0 20 40 60 80 100 120
10.8
11.0
11.2
11.4
11.6
11.8
12.0
VDDUV+ ,VBSUV+ [V]
Temperature [°C] -40 -20 0 20 40 60 80 100 120
10.0
10.2
10.4
10.6
10.8
11.0
11.2
11.4
11.6
VDDUV- ,VBSUV- [V]
Temperature [°C]
-40-200 20406080100120
0
100
200
300
400
500
IQDD [μA]
Temperature [°C] -40 -20 0 20 40 60 80 100 120
0
20
40
60
80
100
IQBS [μA]
Temperat ure [° C]
-40 -20 0 20 40 60 80 100 120
0
200
400
600
800
1000
IPDD [μA]
Temperat ure [° C] -40-200 20406080100120
0
200
400
600
800
IPBS [μA]
Temperature [°C]
FAN73832 Half-Bridge Gate-Drive IC
© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN73832 Rev. 1.0.2 9
Typical Characteristics (Continued)
Figure 11. Logic Input Current vs. Temperature Figure 12. Logic Input High Voltage vs. Temperature
Figure 13. Logic Input Low Voltage vs. Temperature Figure 14. SD Positive Threshold vs. Temperature
Figure 15. SD Negative Threshold vs. Temperature Figure 16. Turn-on Delay Time vs. Temperature
-40 -20 0 20 40 60 80 100 120
0
20
40
60
80
100
IIN+ [μA]
Temperat ure [° C] -40-200 20406080100120
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VIH [V]
Temperature [°C]
-40-200 20406080100120
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VIL [V]
Temperature [°C] -40-200 20406080100120
0.0
0.5
1.0
1.5
2.0
2.5
3.0
SD+ BAR [V]
Temperature [°C]
-40 -20 0 20 40 60 80 100 120
0.0
0.5
1.0
1.5
2.0
2.5
3.0
SD- BAR [V]
Temperature [°C] -40-200 20406080100120
0
200
400
600
800
tON [nsec]
Temperature [°C]
FAN73832 Half-Bridge Gate-Drive IC
© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN73832 Rev. 1.0.2 10
Typical Characteristics (Continued)
Figure 17. Turn-off Delay Time vs. Temperature Figure 18. Dead--Time (RDT=20kΩ) vs. Temperature
Figure 19. Dead Time (RDT=200kΩ) vs. Temperature Figure 20. RDT vs. Dead-Time
Figure 21. Allowable Negative VS Voltage for Signal
Propagation to High Side vs. Temperature
-40-200 20406080100120
0
50
100
150
200
250
300
tOFF [nsec]
Temperature [°C] -40-200 20406080100120
300
350
400
450
500
DT1, RDT= 20kΩ [nsec]
Temperature [°C]
-40 -20 0 20 40 60 80 100 120
1.2
1.4
1.6
1.8
2.0
2.2
2.4
DT1, RDT= 200kΩ [nsec]
Temperature [°C] 20 40 60 80 100 120 140 160 180 200
0.0
0.4
0.8
1.2
1.6
2.0
Deadtime [μS]
RDT [kohm]
-40 -20 0 20 40 60 80 100 120
-14
-12
-10
-8
-6
VS [V]
Temperat ure [° C]
FAN73832 Half-Bridge Gate-Drive IC
© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN73832 Rev. 1.0.2 11
Switching Time Definitions
Figure 22. Switching Time Test Circuit
Figure 23. Input / Output Waveforms
Figure 24. Switching Time Waveform Definitions
+15V
SD
1
3
2GND
LO
VB
VS
HO
VDD
DT/SD
IN
4
FAN73832
5
6
7
10μF 100nF
20K
1nF
1nF
+15V 100nF10μF
Control
8
HO
LO
FAN73832 Rev:00
IN
HO
LO
DT/SD
DT1 DT2 DT1DT2 DT1
Shutdown Shutdown
FAN73832 Rev.00
IN
HO
LO
10%
90%
50% 50%
90%
10%
tOFF
tOFF
tON
tON
FAN73832 Rev.00
FAN73832 Half-Bridge Gate-Drive IC
© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN73832 Rev. 1.0.2 12
Figure 25. Shutdown Waveform Definition
Figure 26. Dead-Time Control Waveform Definition
90%
50%
tSD
HO or LO
DT/SD
FAN73832 Rev.00
HO 10%
90%
DT1
LO
90%
10%
DT2
MDT= |DT1 - DT2|
FAN73832 Rev.00
FAN73832 Half-Bridge Gate-Drive IC
© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN73832 Rev. 1.0.2 13
Typical Application Information
1. Normal Operating Consideration
The FAN73832 i s a single PWM input, half-bridge , gate-
drive IC with programmable dead-time and shutdown
functions.
The dead-time is set with a resistor (RDT) at the DT/SD
pin. The wide dead-time programming range provides
the flexibility to optimize drive signal timing for a
selection of switching devices (MOSFET or IGBT) and
applications.
The turn-on time delay circuitry (Dead-Time)
accommodates resistor values from 20kΩ to 200kΩ with
a dead-time proportional to the RDT resistance.
If the DT/SD pin voltage decreases below 1.2V in the
normal operation, the IC enters shutdown mode.
The external dead-time setting resistor (RDT) is at least
above 20KΩ for normal operation in typical applications.
2. Under-Voltage Lockout (UVLO)
The FAN73832 has an under-voltage lockout (UVLO)
protection circuit for high- and low-side channels to
prevent malfunction when VDD and VBS are lower than
the specified threshold voltage. The UVLO circuitry
monitors the supply voltage (VDD) and bootstrap
capacitor voltage (VBS) antepenult.
3. Layout Consideration
For optimum performance o f the high- an d low-side gate
drivers, considerations must be taken during printed
circuit board (PCB) layout.
3.1 Supply Capacitors
If the output stages are able to quickly turn-on a
switching device with a high value of current, the supply
capacitors must be placed as close as possible to the
device pins (VDD and GND for the ground-tied supply, VB
and VS for the floating supply) to minimize parasitic
inductance and resistance.
3.2 Gate Drive Loop
Current loops behave like an antenna, able to receive
and transmit noise. To reduce the noise coupling/emis-
sion and improve the power switch turn-on and off per-
formances, gate drive loops must be reduced as much
as possible.
3.3 Ground Plane
Ground plane must not be placed under or nearby the
high-voltage floating side to minimize noise coupling.
FAN73832 Half-Bridge Gate-Drive IC
© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN73832 Rev. 1.0.2 14
Mechanical Dimensions
8-SOP
Dimensions are in millimeters (inches) unless otherwise noted..
Figure 27. 8-Lead Small Outline Package (SOP)
January 2001, Rev. A
4.92
±0.20
0.194
±0.008
0.41
±0.10
0.016
±0.004
1.27
0.050
5.72
0.225
1.55
±0.20
0.061
±0.008
0.1~0.25
0.004~0.001
6.00
±0.30
0.236
±0.012
3.95
±0.20
0.156
±0.008
0.50
±0.20
0.020
±0.008
5.13
0.202 MAX
#1
#4 #5
0~8°
#8
0.56
0.022
()
1.80
0.071
MAX0.10
MAX0.004
MAX
MIN
+
0.10
-0.05
0.15
+
0.004
-0.002
0.006
8sop225_dim.pdf
FAN73832 Half-Bridge Gate-Drive IC
© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN73832 Rev. 1.0.2 15
Mechanical Dimensions (Continued)
8-DIP
Dimensions are in millimeters (inches) unless otherwise noted..
Figure 28. 8-Lead Dual In-Line Package (DIP)
September 1999, Rev B
6.40
±0.20
3.30
±0.30
0.130
±0.012
3.40
±0.20
0.134
±0.008
#1
#4 #5
#8
0.252
±0.008
9.20
±0.20
0.79
2.54
0.100
0.031
()
0.46
±0.10
0.018
±0.004
0.060
±0.004
1.524
±0.10
0.362
±0.008
9.60
0.378 MAX
5.08
0.200
0.33
0.013
7.62
0~15°
0.300
MAX
MIN
0.25
+0.10
–0.05
0.010
+0.004
–0.002
pdip8_dim.pdf
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary First Production This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to improve
design.
Obsolete Not In Production This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.
Rev. I23
FAN73832 Half-Bridge Gate-Drive IC
© 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FAN73832 Rev. 1.0.2 16
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