SD103CWS-V-G-08 - Vishay Presicion Group

SD103AWS-V-G, SD103BWS-V-G, SD103CWS-V-G

Document Number 81142

Rev. 1.1, 13-May-11

Vishay Semiconductors

www.vishay.com

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Small Signal Schottky Diodes

Features

• The SD103 series is a metal-on-silicon

Schottky barrier device which is

protected by a PN junction guard ring

• The low forward voltage drop and fast

switching make it ideal for protection of

MOS devices, steering, biasing, and

coupling diodes for fast switching and

low logic level applications

• Other applications are click suppression,

efficient full wave bridges in telephone subsets,

and blocking diodes in rechargeable low voltage

battery systems

• For general purpose applications

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

Mechanical Data

Case: SOD-323

Weight: approx. 4.0 mg

Packaging codes/options:

18/10K per 13" reel (8 mm tape), 10K/box

08/3K per 7" reel (8 mm tape), 15K/box

Parts Table

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

Note

1) Valid provided that electrodes are kept at ambient temperature

Thermal Characteristics

Tamb = 25 °C, unless otherwise specified

Note

1) Valid provided that electrodes are kept at ambient temperature

** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902

20145

Part Ordering code Type marking Remarks

SD103AWS-V-G SD103AWS-V-G-18 or SD103AWS-V-G-08 Z6 Tape and reel

SD103BWS-V-G SD103BWS-V-G-18 or SD103BWS-V-G-08 Z7 Tape and reel

SD103CWS-V-G SD103CWS-V-G-18 or SD103CWS-V-G-08 Z8 Tape and reel

Parameter Test condition Part Symbol Value Unit

Peak reverse voltage

SD103AWS-V-G VRRM 40 V

SD103BWS-V-G VRRM 30 V

SD103CWS-V-G VRRM 20 V

Forward continuous current IF350 1) mA

Single cycle surge 10 µs square wave IFSM 2A

Power dissipation Ptot 200 1) mW

Parameter Test condition Symbol Value Unit

Thermal resistance junction to ambient air RthJA 500 1) K/W

Junction temperature Tj125 °C

Storage temperature range Tstg - 55 to + 150 °C

www.vishay.com

Document Number 81142

Rev. 1.1, 13-May-11

SD103AWS-V-G, SD103BWS-V-G, SD103CWS-V-G

Vishay Semiconductors

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Typical Characteristics

Tamb = 25 °C unless otherwise specified

Parameter Test condition Part Symbol Min. Ty p. Max. Unit

Leakage current

VR = 30 V SD103AWS-V-G IR5µA

VR = 20 V SD103BWS-V-G IR5µA

VR = 10 V SD103CWS-V-G IR5µA

Forward voltage drop IF = 20 mA VF370 mV

IF = 200 mA VF600 mV

Diode capacitance VR = 0 V, f = 1 MHz CD50 pF

Reverse recovery time IF = IR = 50 mA to 200 mA,

recover to 0.1 IR

trr 10 ns

Figure 1. Typical Variation of Forward Current vs. Forward

Voltage

Figure 2. Typical High Current Forward Conduction Curve

18488

0.01

1000

100

0.1

0 0.4 0.6 0.81.00.2

I - Forward Current (mA)

VF- Forward Voltage (V)

18489

0.5 1.001.5

I - Forward Current (A)

VF- Forward Voltage (V)

duty cycle = 2 %

tp= 300 ms

Figure 3. Typical Variation of Reverse Current at Various

Temperatures

Figure 4. Diode Capacitance vs. Reverse Voltage

0.01

0.1

100

1000

0 5 10 15 20 25 30 35 40 45 50

V - Reverse Voltage (V)

- Reverse Current (µA)

20084

75 °C

50 °C

25 °C

100 °C

amb

= 125 °C

18491

10 20 30 40 050

C- Diode Capacitance (pF)

R - Reverse Voltag e (V)

100

SD103AWS-V-G, SD103BWS-V-G, SD103CWS-V-G

Document Number 81142

Rev. 1.1, 13-May-11

Vishay Semiconductors

www.vishay.com

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Dimensions in millimeters (inches): SOD-323

Figure 5. Blocking Voltage Deration vs. Temperature at Various

Average Forward Currents

Tamb- Ambient Temperature (°C)18492

100 2000

VR- Reverse Voltage (V)

= 400 mAIF

100 mA

200 mA

Foot print recommendation:

Rev. 5 - Date: 23.Sept.2009

17443

Document no.:S8-V-3910.02-001 (4)

0.6 (0.024)

0.6 (0.024)0.6 (0.024)

1.6 (0.063)

0.10 (0.004)

Cathode bar

0.20 (0.008)

0.40 (0.016)

2.50 (0.098)

1.1 (0.043)

1.5 (0.059)

2.85 (0.112)

1.60 (0.063)

1.95 (0.077)

0.15 (0.006)

0.1 (0.004) max.

1.15 (0.045)

0.8 (0.031)

Created - Date: 24.August.2004

0.40 (0.016)

0.25 (0.010)

0.2 (0.008)

0° to 8°

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Revision: 12-Mar-12 1Document Number: 91000

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