Ordering number:ENN346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions * High breakdown voltage VCEO 100/120V, High current 1A. * Low saturation voltage, excellent hFE linearity. unit:mm 2009B [2SB631, 631K/2SD600, 600K] 8.0 2.7 1.5 7.0 3.0 11.0 4.0 3.0 1.6 0.8 0.8 0.6 15.5 0.5 2 ( ) : 2SB631, 631K 3 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126 1.2 1 2.4 Specifications 4.8 Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions 2SB631, D600 2SB631K, D600K Unit Collector-to-Base Voltage VCBO (-)100 (-)120 V Collector-to-Emitter Voltage VCEO VEBO (-)100 (-)120 V (-)5 V IC (-)1 A ICP (-)2 A 1 W Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25C 8 W 150 C -55 to +150 C Electrical Characteristics at Ta = 25C Parameter Symbol Collector-to-Base Breakdown Voltage V(BR)CBO IC=(-)10A, IE=0 Collector-to-Emitter Brakdown Voltage V(BR)CEO IC=(-)1mA, RBE= Emitter-to-Base Breakdown Voltage V(BR)EBO ICBO IE=(-)10A, IC=0 IEBO VEB=(-)4V, IC=0 Collector Cutoff Current Emitter Cutoff Current Ratings Conditions min typ max Unit B631, D600 (-)100 V B631K, D600K (-)120 V B631, D600 (-)100 V B631K, D600K (-)120 V (-)5 V VCB=(-)50V, IE=0 (-)1 A (-)1 A Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 11504TN (KT)/91098HA (KT)/72195MO (KOTO)/4017KI/D144MW, TS/E107, 8-2338/9286 No.346-1/4 2SB631, 631K/2SD600, 600K Continued on next page. Parameter Symbol hFE1 DC Current Gain hFE2 VCE=(-)5V, IC=(-)50mA VCE=(-)5V, IC=(-)500mA fT VCE=(-)10V, IC=(-)50mA Gain-Bandwidth Product Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) Base-to-Emitter Saturation Voltage Fall Time tf Turn-OFF Time min typ 320* 20 (110) MHz 130 MHz VCB=(-)10V, f=1MHz (30)20 IC=(-)500mA, IB=(-)50mA (-)0.15 (-)0.4 IC=(-)500mA, IB=(-)50mA (-)0.85 (-)1.2 See specified Test Circuit tstg Unit max 60* See specified Test Circuit toff Storage Time Ratings Conditions See specified Test Circuit pF V V (80) ns 100 ns (100) ns 500 ns (600) ns 700 ns * : The 2SB631/2SD600 are classified by 50mA hFE as follows : Rank D E F hFE 60 to 120 100 to 200 160 to 320 Switching Time Test Circuit IB1 1 IB2 100 24 PW=20s 1F 1F VCE=12V --2V IC=10IB1= --10IB2=500mA (For PNP, the polarity is reversed.) IC -- VCE --1.6 A --15mA --12mA --10mA --1.0 --0.8 --8mA --0.6 --6mA --4mA --0.4 0 --1 --2 --3 --4 0.6 4mA 10mA 8mA 0.4 IB=0 0 ITR08276 IC -- VBE 1 2 5 6 Collector-to-Emitter Voltage, VCE - V ITR08277 --0.8 --0.6 --0.4 --0.2 4 2SD600, 600K VCE=5V 1.2 --1.0 3 IC -- VBE 1.4 Collector Current, IC - A Collector Current, IC - A 6mA --6 2SB631, 631K VCE= --5V --1.2 0.8 0 --5 Collector-to-Emitter Voltage, VCE - V --1.4 1.0 0.2 IB=0 0 20mA 15mA 12mA 1.2 2mA --2mA --0.2 2SD600, 600K Tc=25C 1.4 Collector Current, IC - A m --20 --1.2 IC -- VCE 1.6 2SB631, 631K Tc=25C --1.4 Collector Current, IC - A +12V 1.0 0.8 0.6 0.4 0.2 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE - V --1.2 ITR08278 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE - V 1.2 ITR08279 No.346-2/4 2SB631, 631K/2SD600, 600K Cob -- VCB 2 Cob -- VCB 2 2SD600, 600K f=1MHz Output Capacitance, Cob - pF 100 7 5 3 2 10 100 7 5 3 2 10 7 7 5 5 5 7 2 --1.0 3 5 7 2 --10 3 5 5 Collector-to-Base Voltage, VCB -- V 7 --100 ITR08280 7 2 10 3 5 7 100 ITR08281 hFE -- IC 2SD600, 600K VCE=5V 2 DC Current Gain, hFE DC Current Gain, hFE 5 3 2 100 7 5 3 2 100 7 5 3 2 10 10 7 5 --1.0 2 3 5 2 --10 3 5 --100 2 3 7 5 1.0 5 --1000 2 3 5 ITR08282 Collector Current, IC - mA VCE(sat) -- IC --1.0 3 2 --0.1 7 5 3 2 --0.01 --1.0 2 3 5 --10 2 3 5 --100 2 3 5 Collector Current, IC - mA 5 7 5 1.0 2 0 2025 40 60 80 100 3 5 2 10 3 120 Case Temperature, Tc - C 140 160 ITR08286 5 100 2 3 5 Collector Current, IC - mA 1.0 1000 2 3 ITR08285 ASO 2SB631, K / 2SD600, K ICP=2A IC=1A 5 DC 3 2 op era tio 0.1 n 5 3 2 0.01 1 0 2 ms 10 3 5 0.01 s m3 50x 50x AI 1.5m m3 AI 4 3.9 3 s 1m .5m 2 ITR08283 2 0m 10 1s 00 x1 5 1000 3 3 2 0x 1 5 5 5 10 2 3 100 7 --1000 2 3 ITR08284 7 6 5.7 5 0.1 Collector Current, IC - A 8 3 2 2SB631, K / 2SD600, K Mica(IS -- 126) With silicone grease 9 2 10 Collector Current, IC - mA 3 PC -- Tc 10 5 2SD600, 600K IC / IB=10 7 Collector-to-Emitter Saturation Voltage, VCE (sat) - V 5 2 3 VCE(sat) -- IC 1.0 2SB631, 631K IC / IB=10 7 Collector Dissipation, PC - W 3 5 2SB631, 631K VCE=--5V 3 Collector-to-Emitter Saturation Voltage, VCE (sat) - V 2 1.0 Collector-to-Base Voltage, VCB -- V hFE -- IC 5 7 2SB631K 2SD600K Output Capacitance, Cob - pF 2SB631, 631K f=1MHz Ta=25C, Single pulse (For PNP, minus sign is omitted.) 5 1.0 2 3 5 7 10 2SB631 2SD600 2 3 5 7 100120 2 3 ITR08287 Collector-to-Emitter Voltage, VCE - V No.346-3/4 2SB631, 631K/2SD600, 600K PC -- Ta Collector Dissipation, PC - W 1.2 1.0 0.8 No he at 0.6 sin k 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta - C 140 160 ITR08288 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2004. Specifications and information herein are subject to change without notice. PS No.346-4/4