Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistor
100V/120V, 1A Low-Frequency
Power Amplifier Applications
Ordering number:ENN346G
2SB631,631K/2SD600,600K
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11504TN (KT)/91098HA (KT)/72195MO (KOTO)/4017KI/D144MW, TS/E107, 8-2338/9286 No.346–1/4
retemaraPlobmySsnoitidnoC006D,136BS2K006D,K136BS2tinU
egatloVesaB-ot-rotcelloCV
OBC 001)–(021)–(V
egatloVrettimE-ot-rotcelloCV
OEC 001)–(021)–(V
egatloVesaB-ot-rettimEV
OBE 5)–(V
tnerruCrotcelloCI
C1)–(A
)esluP(tnerruCrotcelloCI
PC 2)–(A
noitapissiDrotcelloCP
C1W
8W
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
( ) : 2SB631, 631K
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2009B
[2SB631, 631K/2SD600, 600K]
Features
· High breakdown voltage VCEO 100/120V, High
current 1A.
· Low saturation voltage, excellent hFE linearity.
˚C
˚C
Electrical Characteristics at Ta = 25˚C
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126
Tc=25˚C
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
egatloVnwodkaerBesaB-ot-rotcelloCV
OBC)RB( ICI,Aµ01)–(= E0= 006D,136B001)–(V
K006D,K136B021)–(V
egatloVnwodkarBrettimE-ot-rotcelloCV
OEC)RB( ICR,Am1)–(= EB =∞006D,136B001)–(V
K006D,K136B021)–(V
egatloVnwodkaerBesaB-ot-rettimEV
OBE)RB( IEI,Aµ01)–(= C0=5)–(V
tnerruCffotuCrotcelloCI
OBC VBC I,V05)–(= E0=1)–(Aµ
tnerruCffotuCrettimEI
OBE VBE I,V4)–(= C0=1)–(Aµ
8.04.0
7.011.0
1.5
15.5 3.0
1.6
0.80.8
0.6 0.5
2.7
4.8
2.4
1.2
123
3.0
Continued on next page.
2SB631, 631K/2SD600, 600K
No.346–2/4
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
niaGtnerruCCD hEF 1V
EC I,V5)–(= CAm05)–(=*06*023
hEF 2V
EC I,V5)–(= CAm005)–(=02
tcudorPhtdiwdnaB-niaGf
TVEC I,V01)–(= CAm05)–(= )011(zHM
031zHM
ecnaticapaCtuptuOC
bo VBC zHM1=f,V01)–(=02)03(Fp
egatloVnoitarutaSrettimE-ot-rotcelloCV
)tas(EC ICI,Am005)–(= BAm05)–(=51.0)–(4.0)–(V
egatloVnoitarutaSrettimE-ot-esaBV
)tas(EB ICI,Am005)–(= BAm05)–(=58.0)–(2.1)–(V
emiTllaFt
ftiucriCtseTdeificepseeS )08(sn
001sn
emiTFFO-nruTt
ffo tiucriCtseTdeificepseeS )001(sn
005sn
emiTegarotSt
gts tiucriCtseTdeificepseeS )006(sn
007sn
* : The 2SB631/2SD600 are classified by 50mA hFE as follows :
knaRDEF
hEF 021ot06002ot001023ot061
Switching Time Test Circuit
Continued on next page.
100Ω
+12V
--2V
VCE=12V
IC=10IB1= --10IB2=500mA
(For PNP, the polarity is reversed.)
24Ω
1Ω
1µF1µF
PW=20µs
IB1
IB2
00 --1 --2 --3 --4 --6--5
IC -- VCE
ITR08276
--1.6
--0.4
--0.6
--1.2
--1.4
--0.8
--1.0
--0.2
00 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2
IC -- VBE
ITR08278
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
IB=0
--2mA
--4mA
--6mA
--8mA
--10mA
--12mA
--15mA
--20mA
001234 65
IC -- VCE
ITR08277
1.6
0.4
0.6
1.2
1.4
0.8
1.0
0.2
IB=0
12mA
15mA
20mA
10mA
2mA
4mA
6mA
8mA
2SB631, 631K
VCE= --5V
2SB631, 631K
Tc=25°C2SD600, 600K
Tc=25°C
00 0.2 0.4 0.6 0.8 1.0 1.2
IC -- VBE
ITR08279
0.2
0.4
0.6
0.8
1.0
1.2
1.4
2SD600, 600K
VCE=5V
Collector Current, IC–A
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–A
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–A
Base-to-Emitter Voltage, VBE –V
Collector Current, IC–A
Base-to-Emitter Voltage, VBE –V
2SB631, 631K/2SD600, 600K
No.346–3/4
PC -- Tc
10
8
2
4
3.9
6
5.7
9
7
1
3
5
0402025 60 80 100 120 140 1600
ITR08286
VCE(sat) -- IC
ITR08284
--0.01
--0.1
--1.0
5
5
7
7
3
3
2
2
--1.0 --10 --100 --1000
22223333555 1.0 10 100 1000
22223333555
2SB631, K / 2SD600, K
Mica(IS -- 126)
With silicone grease
100×100×1.5mm
3
AI
50×50×1.5mm
3
AI
0.01
0.1
2
5
5
3
2
2
5
5
3
3
1.0
10 1001201.0 23 5 5377232
100ms
10ms
1ms
1s
ITR08287
A S O
DC operation
hFE -- IC
10
100
3
5
5
5
7
7
2
3
2
333355552222
--1.0 --10 --100 --1000 ITR08282
2SB631, 631K
f=1MHz
Cob -- VCB
ITR08280
100
10
5
5
7
7
3
2
2
223355 5777--1.0 --10 --100
2SD600, 600K
f=1MHz
Cob -- VCB
ITR08281
100
10
5
5
7
7
3
2
2
223355 57771.0 10 100
2SB631, 631K
VCE=--5V
2SB631, 631K
IC / IB=10
VCE(sat) -- IC
ITR08285
0.01
0.1
1.0
5
5
5
7
7
7
3
3
2
2
2SD600, 600K
IC / IB=10
2SB631, K / 2SD600, K
2SB631
2SD600
2SB631K
2SD600K
hFE -- IC
10
100
3
5
5
5
7
7
2
3
2
333355552222
1.0 10 100 1000 ITR08283
2SD600, 600K
VCE=5V
Ta=25°C, Single pulse
(For PNP, minus sign
is omitted.)
DC Current Gain, hFE
Collector Current, IC–mA
DC Current Gain, hFE
Collector Current, IC–mA
Output Capacitance, Cob – pF
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob – pF
Collector-to-Base Voltage, VCB -- V
Collector Current, IC–mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) – V
Collector Current, IC–mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) – V
Collector Dissipation, P
C
–W
Case Temperature, Tc – ˚C Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–A
ICP=2A
IC=1A
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2004. Specifications and information herein are subject
to change without notice.
2SB631, 631K/2SD600, 600K
PS No.346–4/4
PC -- Ta
0.2
0.6
1.0
1.2
0.4
0.8
04020 60 80 100 120 140 1600
ITR08288
No heat sink
Collector Dissipation, PC–W
Ambient Temperature, Ta – ˚C
