TIP145T/146T/147T TIP145T/146T/147T Monolithic Construction With Built In BaseEmitter Shunt Resistors * High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A (Min.) * Industrial Use * Complement to TIP140T/141T/142T TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : TIP145T : TIP146T : TIP147T Value - 60 - 80 - 100 Units V V V VCEO Collector-Emitter Voltage : TIP145T : TIP146T : TIP147T - 60 - 80 - 100 V V V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) - 10 A ICP Collector Current (Pulse) - 15 A IB Base Current (DC) - 0.5 A PC Collector Dissipation (TC=25C) 80 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C Equivalent Circuit C B R1 R2 R1 8k R 2 0.12 k E Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) ICEO ICBO Parameter Collector-Emitter Sustaining Voltage : TIP145T : TIP146T : TIP147T Test Condition IC = - 30mA, IB = 0 Min. Typ. Max. - 60 - 80 - 100 Units V V V Collector Cut-off Current : TIP145T : TIP146T : TIP147T VCE = - 30V, IB = 0 VCE = - 40V, IB = 0 VCE = - 50V, IB = 0 -2 -2 -2 mA mA mA : TIP145T : TIP146T : TIP147T VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VCB = - 100V, IE = 0 -1 -1 -1 mA mA mA -2 mA V V Collector Cut-off Current IEBO Emitter Cut-off Current VBE = - 5V, IC = 0 hFE DC Current Gain VCE = - 4V, IC = - 5A VCE = - 4V, IC = - 10A VCE(sat) Collector-Emitter Saturation Voltage IC = - 5A, IB = - 10mA IC = - 10A, IB = - 40mA -2 -3 - 3.5 V -3 V VBE(sat) Base-Emitter Saturation Voltage IC = - 10A, IB = - 40mA VBE(on) Base-Emitter On Voltage VCE = - 4V, IC = - 10A tD Delay Time tR Rise Time tSTG Storage Time VCC = - 30V, IC = - 5A IB1 = -20mA, IB2 = 20mA RL = 6 tF Fall Time (c)2002 Fairchild Semiconductor Corporation 1000 500 0.15 s 0.55 s 2.5 s 2.5 s Rev. B, December 2002 TIP145T/146T/147T Typical Characteristics -10 100000 VCE = -4V -8 IB = -1800A IB = -1600A IB = -1400A IB = -1200A IB = -2000A -7 -6 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT -9 IB = -1000A -5 IB = -800A -4 -3 IB = -600A -2 10000 1000 IB = -400A -1 -0 -0 -1 -2 -3 -4 100 -0.1 -5 -1 Figure 1. Static Characteristic Figure 2. DC current Gain -1000 -10 f=0.1MHz IC=-500IB Cob[pF], CAPACITANCE VBE(sat) -1 -100 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -10 VCE(sat) -0.1 -100 -10 -0.01 -0.1 -1 -10 -1 -100 IC[A], COLLECTOR CURRENT -10 -100 -1000 VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 120 -100 PC[W], POWER DISSIPATION -10 DC IC[A], COLLECTOR CURRENT 100 -1 TIP145T TIP146T 80 60 40 20 TIP147T 0 -0.1 -1 -10 -100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area (c)2002 Fairchild Semiconductor Corporation -1000 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. B, December 2002 TIP145T/146T/147T Package Dimensions TO-220 4.50 0.20 2.80 0.10 (3.00) +0.10 1.30 -0.05 18.95MAX. (3.70) o3.60 0.10 15.90 0.20 1.30 0.10 (8.70) (1.46) 9.20 0.20 (1.70) 9.90 0.20 1.52 0.10 0.80 0.10 2.54TYP [2.54 0.20] 10.08 0.30 (1.00) 13.08 0.20 ) (45 1.27 0.10 +0.10 0.50 -0.05 2.40 0.20 2.54TYP [2.54 0.20] 10.00 0.20 Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. B, December 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2002 Fairchild Semiconductor Corporation Rev. I1