IPAW60R280P7S MOSFET 600VCoolMOSP7PowerTransistor PG-TO220FullPAKWideCreepage TheCoolMOSTM7thgenerationplatformisarevolutionarytechnologyfor highvoltagepowerMOSFETs,designedaccordingtothesuperjunction (SJ)principleandpioneeredbyInfineonTechnologies.The600V CoolMOSTMP7seriesisthesuccessortotheCoolMOSTMP6series.It combinesthebenefitsofafastswitchingSJMOSFETwithexcellentease ofuse,e.g.verylowringingtendency,outstandingrobustnessofbody diodeagainsthardcommutationandexcellentESDcapability. Furthermore,extremelylowswitchingandconductionlossesmake switchingapplicationsevenmoreefficient,morecompactandmuch cooler. Features *Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding commutationruggedness *Significantreductionofswitchingandconductionlosses *ExcellentESDrobustness>2kV(HBM)forallproducts *BetterRDS(on)/packageproductscomparedtocompetitionenabledbya lowRDS(on)*A(below1Ohm*mm) *Productvalidationacc.JEDECStandard Drain Pin 2 Gate Pin 1 Source Pin 3 Benefits *Easeofuseandfastdesign-inthroughlowringingtendencyandusage acrossPFCandPWMstages *Simplifiedthermalmanagementduetolowswitchingandconduction losses *Increasedpowerdensitysolutionsenabledbyusingproductswith smallerfootprintandhighermanufacturingqualitydueto>2kVESD protection *Suitableforawidevarietyofapplicationsandpowerranges Potentialapplications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom andUPS. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 280 m Qg,typ 18 nC ID,pulse 36 A Eoss @ 400V 2.1 J Body diode diF/dt 900 A/s Type/OrderingCode Package IPAW60R280P7S PG -TO220 FullPAK WideCreepage Final Data Sheet Marking 60S280P7 1 RelatedLinks see Appendix A Rev.2.1,2018-05-25 600VCoolMOSP7PowerTransistor IPAW60R280P7S TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 2 Rev.2.1,2018-05-25 600VCoolMOSP7PowerTransistor IPAW60R280P7S 1Maximumratings atTj=25C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 12 8 A TC=25C TC=100C - 36 A TC=25C - - 38 mJ ID=2.7A; VDD=50V; see table 10 EAR - - 0.19 mJ ID=2.7A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 2.7 A - MOSFET dv/dt ruggedness dv/dt - - 80 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 24 W TC=25C Storage temperature Tstg -40 - 150 C - Operating junction temperature Tj -40 - 150 C - Mounting torque - - - 50 Ncm M2.5 screws IS - - 12 A TC=25C Diode pulse current IS,pulse - - 36 A TC=25C Reverse diode dv/dt3) dv/dt - - 50 V/ns VDS=0...400V,ISD<=12A,Tj=25C see table 8 Maximum diode commutation speed diF/dt - - 900 A/s VDS=0...400V,ISD<=12A,Tj=25C see table 8 Insulation withstand voltage VISO - - 2500 V Vrms,TC=25C,t=1min Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive Continuous diode forward current 2) 1) Limited by Tj,max. Maximum Duty Cycle D = 0.50; TO-220 equivalent Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG 2) Final Data Sheet 3 Rev.2.1,2018-05-25 600VCoolMOSP7PowerTransistor IPAW60R280P7S 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Unit Note/TestCondition Min. Typ. Max. RthJC - - 5.27 C/W - Thermal resistance, junction - ambient RthJA - - 62 C/W leaded Thermal resistance, junction - ambient RthJA for SMD version - - - C/W - Soldering temperature, wavesoldering only allowed at leads - - 260 C Final Data Sheet Tsold 4 1.6mm (0.063 in.) from case for 10s Rev.2.1,2018-05-25 600VCoolMOSP7PowerTransistor IPAW60R280P7S 3Electricalcharacteristics atTj=25C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.5 4 V VDS=VGS,ID=0.19mA - 10 1 - A VDS=600V,VGS=0V,Tj=25C VDS=600V,VGS=0V,Tj=150C IGSS - - 1000 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.214 0.499 0.280 - VGS=10V,ID=3.8A,Tj=25C VGS=10V,ID=3.8A,Tj=150C Gate resistance RG - 7 - f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 600 - Gate threshold voltage V(GS)th 3 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 761 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 14 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related1) Co(er) - 27 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 280 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 17 - ns VDD=400V,VGS=13V,ID=3.8A, RG=10.0;seetable9 Rise time tr - 9 - ns VDD=400V,VGS=13V,ID=3.8A, RG=10.0;seetable9 Turn-off delay time td(off) - 60 - ns VDD=400V,VGS=13V,ID=3.8A, RG=10.0;seetable9 Fall time tf - 9 - ns VDD=400V,VGS=13V,ID=3.8A, RG=10.0;seetable9 Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 4 - nC VDD=400V,ID=3.8A,VGS=0to10V Gate to drain charge Qgd - 5 - nC VDD=400V,ID=3.8A,VGS=0to10V Gate charge total Qg - 18 - nC VDD=400V,ID=3.8A,VGS=0to10V Gate plateau voltage Vplateau - 5.2 - V VDD=400V,ID=3.8A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 2) Final Data Sheet 5 Rev.2.1,2018-05-25 600VCoolMOSP7PowerTransistor IPAW60R280P7S Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=3.8A,Tj=25C 158 - ns VR=400V,IF=2A,diF/dt=100A/s; see table 8 - 1.1 - C VR=400V,IF=2A,diF/dt=100A/s; see table 8 - 14.5 - A VR=400V,IF=2A,diF/dt=100A/s; see table 8 Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 6 Rev.2.1,2018-05-25 600VCoolMOSP7PowerTransistor IPAW60R280P7S 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 102 30 1 s 101 25 10 s 100 100 s 1 ms 10 ms 10-1 ID[A] Ptot[W] 20 15 DC 10-2 10 10-3 5 0 10-4 0 25 50 75 100 125 10-5 150 100 101 TC[C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 101 10 101 1 s 0.5 10 s 100 0.2 100 s 100 1 ms 0.1 10 ZthJC[K/W] -1 ID[A] 10 ms DC 10-2 0.05 0.02 0.01 10-1 10-3 single pulse 10-4 10-5 100 101 102 103 10-2 10-5 10-4 10-3 VDS[V] 10-1 100 101 tp[s] ID=f(VDS);TC=80C;D=0;parameter:tp Final Data Sheet 10-2 ZthJC=f(tP);parameter:D=tp/T 7 Rev.2.1,2018-05-25 600VCoolMOSP7PowerTransistor IPAW60R280P7S Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 50 30 20 V 20 V 10 V 10 V 25 40 8V 8V 7V 20 7V 30 ID[A] ID[A] 6V 15 5.5 V 20 10 6V 5V 10 0 5.5 V 5 4.5 V 5V 4.5 V 0 5 10 15 0 20 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25C;parameter:VGS ID=f(VDS);Tj=125C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 1.000 3.000 5.5 V 6V 2.500 6.5 V RDS(on)[normalized] 7V RDS(on)[] 10 V 0.700 20 V 2.000 1.500 1.000 0.500 0.400 0 5 10 15 20 25 30 0.000 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[C] RDS(on)=f(Tj);ID=3.8A;VGS=10V 8 Rev.2.1,2018-05-25 600VCoolMOSP7PowerTransistor IPAW60R280P7S Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 50 12 25 C 10 40 120 V 8 30 ID[A] VGS[V] 150 C 400 V 6 20 4 10 0 2 0 2 4 6 8 10 0 12 0 5 VGS[V] 10 15 20 25 125 150 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=3.8Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 40 30 125 C EAS[mJ] IF[A] 101 25 C 20 100 10 10-1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 25 50 VSD[V] 100 Tj[C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=2.7A;VDD=50V 9 Rev.2.1,2018-05-25 600VCoolMOSP7PowerTransistor IPAW60R280P7S Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 105 690 680 670 104 660 650 640 C[pF] VBR(DSS)[V] Ciss 103 630 620 610 102 600 Coss 590 580 101 570 560 Crss 550 540 -50 -25 0 25 50 75 100 125 150 100 0 100 200 Tj[C] 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy 3 Eoss[J] 2 1 0 0 100 200 300 400 500 VDS[V] Eoss=f(VDS) Final Data Sheet 10 Rev.2.1,2018-05-25 600VCoolMOSP7PowerTransistor IPAW60R280P7S 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform Rg1 VDS Rg 2 IF Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 11 ID VDS Rev.2.1,2018-05-25 600VCoolMOSP7PowerTransistor IPAW60R280P7S 6PackageOutlines E A A1 D1 D Q P H b3 b2 b5 L L1 A2 b 0.381 B A c e DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS DIM A A1 A2 b b2 b3 b5 c D D1 E e N H L L1 Q MILLIMETERS MIN 4.50 2.34 2.65 0.75 0.98 1.00 3.00 0.40 15.47 MAX 4.90 2.74 2.95 0.90 1.26 1.40 0.60 16.27 MIN 0.177 0.092 0.104 0.030 0.039 0.039 0.118 0.016 0.609 MAX 0.193 0.108 0.116 0.035 0.050 0.055 0.024 0.641 9.17 10.70 SCALE 0 2 0 2 4 mm EUROPEAN PROJECTION 0.361 11.30 0.421 4.25 (BSC) 0.445 0.167 (BSC) 3 28.25 12.58 1.70 3.00 3.10 DOCUMENT NO. Z8B00176938 INCHES 3 29.45 13.38 2.30 3.30 3.50 1.112 0.495 0.067 0.118 0.122 1.159 0.527 0.091 0.130 0.138 ISSUE DATE 28-04-2015 REVISION 01 Figure1OutlinePG-TO220FullPAKWideCreepage,dimensionsinmm/inches Final Data Sheet 12 Rev.2.1,2018-05-25 600VCoolMOSP7PowerTransistor IPAW60R280P7S 7AppendixA Table11RelatedLinks * IFXCoolMOSP7Webpage:www.infineon.com * IFXCoolMOSP7applicationnote:www.infineon.com * IFXCoolMOSP7simulationmodel:www.infineon.com * IFXDesigntools:www.infineon.com Final Data Sheet 13 Rev.2.1,2018-05-25 600VCoolMOSP7PowerTransistor IPAW60R280P7S RevisionHistory IPAW60R280P7S Revision:2018-05-25,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2017-05-18 Release of final version 2.1 2018-05-25 Updated diagram scalings; Nomenclature of product qualification grade was changed Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munchen,Germany (c)2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ("Beschaffenheitsgarantie"). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer'scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer'sproductsandanyuseofthe productofInfineonTechnologiesincustomer'sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer's technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 14 Rev.2.1,2018-05-25