BSS8402DW
Document number: DS30380 Rev. 18 - 2 1 of 7
www.diodes.com July 2012
© Diodes Incorporated
BSS8402DW
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Complementary Pair
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT363
Case Material: Molded Plastic. “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
Ordering Information (Note 4)
Part Number Qualification Case Packaging
BSS8402DW-7-F Commercial SOT363 3,000/Tape & Reel
BSS8402DW-13-F Commercial SOT363 10,000/Tape & Reel
BSS8402DWQ-7 Automotive SOT363 3,000/Tape & Reel
BSS8402DWQ-13 Automotive SOT363 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com
Marking Information
Date Code Key
Year 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016
Code P R S T U V W X Y Z A B C D
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
e3
SOT363
Top View Top View
Internal Schematic
S
2
D
2
Q
1
Q
2
D
1
S
1
G
2
G
1
KNP = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: R = 2004)
M = Month (ex: 9 = September)
KNP
YM
BSS8402DW
Document number: DS30380 Rev. 18 - 2 2 of 7
www.diodes.com July 2012
© Diodes Incorporated
BSS8402DW
Maximum Ratings Total Device (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Power Dissipation (Note 5) PD 200 mW
Thermal Resistance, Junction to Ambient R
θ
JA 625 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Maximum Ratings N-CHANNEL – Q1, 2N7002 Section (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage RGS 1.0MΩ V
DGR 60 V
Gate-Source Voltage Continuous
Pulsed VGSS ±20
±40 V
Drain Current (Note 5) Continuous
Continuous @ 100°C
Pulsed ID 115
73
800 mA
Maximum Ratings P-CHANNEL – Q2, BSS84 Section (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage VDSS -50 V
Drain-Gate Voltage RGS 20KΩ V
DGR -50 V
Gate-Source Voltage Continuous VGSS ±20 V
Drain Current (Note 5) Continuous ID -130 mA
Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com.
BSS8402DW
Document number: DS30380 Rev. 18 - 2 3 of 7
www.diodes.com July 2012
© Diodes Incorporated
BSS8402DW
Electrical Characteristics N-CHANNEL – Q1, 2N7002 Section (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS 60 70 V VGS = 0V, ID = 10µA
Zero Gate Voltage Drain Current @ TC = +25°C
@ TC = +125°C IDSS 1.0
500 µA VDS = 60V, VGS = 0V
Gate-Body Leakage IGSS ±10 nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS
(
th
)
1.0 2.5 V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance @ TJ = +25°C
@ TJ = +125°C RDS(on) 3.2
4.4 7.5
13.5 Ω VGS = 5.0V, ID = 0.05A
VGS = 10V, ID = 0.5A
On-State Drain Current ID
(
on
)
0.5 1.0 A VGS = 10V, VDS = 7.5V
Forward Transconductance gFS 80 mS VDS =10V, ID = 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss 22 50 pF
VDS = 25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 11 25 pF
Reverse Transfer Capacitance Crss 2.0 5.0 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD
(
on
)
7.0 20 ns
VDD = 30V, ID = 0.2A,
RL = 150Ω, VGEN = 10V, RGEN = 25ΩTurn-Off Delay Time tD
(
off
)
11 20 ns
Electrical Characteristics P-CHANNEL – Q2, BSS84 Section (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS -50 V VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current IDSS
-15
-60
-100
µA
µA
nA
VDS = -50V, VGS = 0V, TJ = 25°C
VDS = -50V, VGS = 0V, TJ = 125°C
VDS = -25V, VGS = 0V, TJ = 25°C
Gate-Body Leakage IGSS ±10 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS
(
th
)
-0.8 -2.0 V VDS = VGS, ID = -1mA
Static Drain-Source On-Resistance RDS
(
on
)
10 Ω V
GS = -5V, ID = -0.100A
Forward Transconductance gFS .05 S VDS = -25V, ID = -0.1A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss 45 pF
VDS = -25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 25 pF
Reverse Transfer Capacitance Crss 12 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD
(
on
)
10 ns VDD = -30V, ID = -0.27A,
RGEN = 50Ω, VGS = -10V Turn-Off Delay Time tD
(
off
)
18 ns
Notes: 6. Short duration pulse test used to minimize self-heating effect.
BSS8402DW
Document number: DS30380 Rev. 18 - 2 4 of 7
www.diodes.com July 2012
© Diodes Incorporated
BSS8402DW
N-CHANNEL – 2N7002 Section
0
0.2
0.4
0.6
0.8
1.0
012345
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 On-Region Characteristics
DS
I , DRAIN-SOURCE CURRENT (A)
D
0
1
2
3
4
5
00.2
I , DRAIN CURRENT (A)
Figure 2 On-Resistance vs. Drain Current
D
T = 25 C
j
°
6
7
0.4 0.6 0.8 1.0
R , STATIC DRAIN-S OURCE
ON-RESISTANCE ( )
DS(ON)
Ω
1.0
1.5
2.0
2.5
3.0
-55 -30 -5 20 45 70 95 120 145
T , JUNCTION TEMPERA T URE ( C)
Figure 3 On-Resistance vs. Junction Temperature
J
°
V = 10V,
I
GS
D
= 200mA
R , STATIC DRAIN-SOURCE
ON- RESI S TANCE ( )
DS(ON)
Ω
0
V , GATE TO SOURCE VOLTAGE (V)
Figure 4 On-Resistance vs. Gate-Source Voltage
GS
1
2
3
4
5
6
024681012141618
R , STA TIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
Ω
0
2
1
4
3
00.20.4
0.6 0.8 1
V
G
A
T
E-S
O
U
R
C
E
C
U
R
R
EN
T
(V)
GS,
I , DRAIN CURRENT (A)
Figure 5 Typical Transfer Characteristics
D
6
5
8
7
10
9
V = 10V
DS
0
50
100
150
200
250
025
50 75 100 125 150 175 200
,
WE
DISSI
A
I
N (mW)
D
T , AMBIENT TEMPERA TURE ( C)
Figure 6 Max Power Dissipation vs. Ambient Temperature
A
°
BSS8402DW
Document number: DS30380 Rev. 18 - 2 5 of 7
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© Diodes Incorporated
BSS8402DW
V , DRAIN-SOURCE VOLT AGE (V)
DS
Fig ur e 7 Typical Dr ai n- Sour ce Leak age Curre nt v s. Voltage
I, D
R
AIN LEAKA
G
E
C
U
R
R
EN
T
(nA)
DSS
1000
5 1015202530354045505560
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
100
10
1
P-CHANNEL – BSS84 Section
0
-600
-500
-400
-300
-200
-100
0-2-1 -5-4-3
I, D
R
AI
N
-S
O
U
R
C
E
C
U
R
R
E
N
T
(mA)
D
V , DRAIN-SOURCE (V)
DS
Fi gur e 8 Drain- Sou r ce Cu r r ent vs. D r ain- Sour ce Voltage
T = 25C
A
°
-0.0
-1.0
-0.8
-0.6
-0.4
-0.2
0-2-3-4-1 -8-7
-6
-5
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
V , GATE-TO-SOURCE VOLTAGE (V)
GS
Figure 9 Drain Current vs. Gate-Source Voltage
0
1
2
4
5
3
6
8
7
10
9
0-1-2-3 -4 -5
V , GATE TO SOURCE (V)
Figure 10 On-Resistance vs. Gate-Source Voltage
GS
T= 25C
A
°
T = 125C
A
°
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
Ω
0
3
6
9
12
15
-50 -25 025 50 12510075 150
T , JUNCTION TEMPERATURE (°C)
Fig ur e 11 On - Re sistance vs. Junct ion Temperature
J
V = -10V
I = -0.13A
GS
D
R , ON-RESISTANCE ( )
DS
Ω
BSS8402DW
Document number: DS30380 Rev. 18 - 2 6 of 7
www.diodes.com July 2012
© Diodes Incorporated
BSS8402DW
0.0
5.0
10.0
-0.0 -0.2 -0.4 -0.6 -0.8 1.0
I , DRAIN CURRENT (A)
Figure 12 On-Resistance vs. Drain Current
D
15.0
20.0
25.0
V = -8V
GS
V = -10V
GS
V = -3V
GS
V = -3.5V
GS
V = -4V
GS
V = -6V
GS
V = -5V
GS
,
N-
ESIS
AN
E ( )
DS
Ω
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 13 Typical Drain-Source Leakage Current vs. Voltage
-I , D
AIN LEAKA
E
EN
(nA )
DSS
1000
5 101520253035404550
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
100
10
1
Package Outline Dimensions
Suggested Pad Layout
SOT363
Dim Min Max Typ
A 0.10 0.30 0.25
B 1.15 1.35 1.30
C 2.00 2.20 2.10
D 0.65 Typ
F 0.40 0.45 0.425
H 1.80 2.20 2.15
J 0 0.10 0.05
K 0.90 1.00 1.00
L 0.25 0.40 0.30
M 0.10 0.22 0.11
α 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.5
G 1.3
X 0.42
Y 0.6
C1 1.9
C2 0.65
A
M
JL
D
B C
H
K
F
X
Z
Y
C1
C2
C2
G
BSS8402DW
Document number: DS30380 Rev. 18 - 2 7 of 7
www.diodes.com July 2012
© Diodes Incorporated
BSS8402DW
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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