MMBT3906 MMBT3906 Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren fur die Oberflachenmontage PNP PNP Version 2009-04-02 Power dissipation - Verlustleistung 1.1 2.9 0.1 0.4 Plastic case Kunststoffgehause 1 1.30.1 2.5 max 3 Type Code 250 mW SOT-23 (TO-236) Weight approx. - Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert 2 1.9 Dimensions - Mae [mm] 1=B 2=E 3=C Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) MMBT3906 Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open - VCEO 40 V Collector-Base-voltage - Kollektor-Basis-Spannung E open - VCBO 40 V Emitter-Base-voltage - Emitter-Basis-Spannung C open - VEBO 5V Power dissipation - Verlustleistung Ptot 250 mW 1) Collector current - Kollektorstrom (dc) - IC 200 mA Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Tj TS -55...+150C -55...+150C Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. hFE hFE hFE hFE hFE 40 80 100 60 30 - - - - - - - 300 - - Small signal current gain - Kleinsignal-Stromverstarkung hfe 100 - 400 Input impedance - Eingangs-Impedanz hie 2 k - 12 k Output admittance - Ausgangs-Leitwert hoe 3 S - 60 S - 10*10-4 2 DC current gain - Kollektor-Basis-Stromverhaltnis ) - IC IC IC IC IC = = = = = 0.1 mA, 1 mA, 10 mA, 50 mA, 100 mA, - VCE VCE VCE VCE VCE = = = = = 1 1 1 1 1 V V V V V h-Parameters at/bei - VCE = 10 V, - IC = 1 mA, f = 1 kHz Reverse voltage transfer ratio - Spannungsruckwirkung 1 2 hre -4 0.1*10 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% (c) Diotec Semiconductor AG http://www.diotec.com/ 1 MMBT3906 Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. - VCEsat - VCEsat - - - - 0.25 V 0.4 V - VBEsat - VBEsat 0.65 V - - - 0.85 V 0.95 V - ICEX - - 50 nA IEBV - -- 50 nA fT 250 MHz - - CCBO - - 4.5 pF CEBO - - 10 pf F - - 4 dB - VCC = 3 V, - VBE = 0.5 V - IC = 10 mA, - IB1 = 1mA td - - 35 ns tr - - 35 ns - VCC = 3 V, - IC = 10 mA, - IB1 = IB2 = 1 mA ts - - 225 ns tf - - 75 ns Collector-Emitter saturation voltage - Kollektor-Sattigungsspannung 2) - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA Base-Emitter saturation voltage - Basis-Sattigungsspannung 2) - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA Collector-Emitter cutoff current - Kollektor-Emitter-Reststrom - VCE = 30 V, - VEB = 3 V Emitter-Base cutoff current - Emitter-Basis-Reststrom - VCE = 30 V, - VEB = 3 V Gain-Bandwidth Product - Transitfrequenz - IC = 10 mA, - VCE = 20 V, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat - VCB = 5 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance - Emitter-Basis-Kapazitat - VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure - Rauschzahl - VCE = 5 V, - IC = 100 A, RG = 1 k, f = 1 kHz Switching times - Schaltzeiten (between 10% and 90% levels) delay time rise time storage time fall time Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren Marking - Stempelung 2 1 2 RthA < 200 K/W 1) MMBT3904 MMBT3906 = 2A or 3E Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG